Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 11Citation - Scopus: 10Intercalation Leads To Inverse Layer Dependence of Friction on Chemically Doped Mos2(IOP Publishing, 2023) Açıkgöz, Oğulcan; Guerrero, Enrique; Yanılmaz, Alper; Dağdeviren, Ömür E.; Çelebi, Cem; Strubbe, David A.; Baykara, Mehmet Z.We present results of atomic-force-microscopy-based friction measurements on Re-doped molybdenum disulfide (MoS2). In stark contrast to the widespread observation of decreasing friction with increasing number of layers on two-dimensional (2D) materials, friction on Re-doped MoS2 exhibits an anomalous, i.e. inverse, dependence on the number of layers. Raman spectroscopy measurements combined with ab initio calculations reveal signatures of Re intercalation. Calculations suggest an increase in out-of-plane stiffness that inversely correlates with the number of layers as the physical mechanism behind this remarkable observation, revealing a distinctive regime of puckering for 2D materials.Article Citation - WoS: 4Citation - Scopus: 4Graphene/Soi-based Self-Powered Schottky Barrier Photodiode Array(American Institute of Physics, 2022) Yanılmaz, Alper; Fidan, Mehmet; Ünverdi, Özhan; Çelebi, CemWe have fabricated a four-element graphene/silicon on insulator (SOI) based Schottky barrier photodiode array (PDA) and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as a common electrode on a lithographically defined linear array of n-type Si channels on a SOI substrate. As revealed by wavelength resolved photocurrent spectroscopy measurements, each element in the PDA structure exhibited a maximum spectral responsivity of around 0.1 A/W under a self-powered operational mode. Time-dependent photocurrent spectroscopy measurements showed excellent photocurrent reversibility of the device with ∼1.36 and ∼1.27 μs rise time and fall time, respectively. Each element in the array displayed an average specific detectivity of around 1.3 × 1012 Jones and a substantially small noise equivalent power of ∼0.14 pW/Hz-1/2. The study presented here is expected to offer exciting opportunities in terms of high value-added graphene/Si based PDA device applications such as multi-wavelength light measurement, level metering, high-speed photometry, and position/motion detection.Article Citation - WoS: 10Citation - Scopus: 10The Comparison of Transient Photocurrent Spectroscopy Measurements of Pulsed Electron Deposited Zno Thin Film for Air and Vacuum Ambient Conditions(Elsevier, 2019) Özdoğan, Mehmet; Yiğen, Serap; Çelebi, Cem; Utlu, GökhanPhotoconduction mechanism of ZnO thin films that produced by Pulsed Electron Deposition method is systematically investigated by taking Transient Photocurrent Spectroscopy measurements for different atmospheres including high vacuum and air environments. Response and recovery rates of photocurrent in the air are faster than the rates in high vacuum condition. The results in the presented work clearly indicate that the photoconduction of ZnO thin films with high surface-area-to-volume ratio are surface-related and mostly governed by adsorption/desorption of oxygen and water molecules in the atmosphere. Therefore, the high surface interaction tendency of ZnO surface with the atmosphere inevitably leads to charge transfer from surface to adsorbates and/or vice versa.Article Citation - WoS: 2Citation - Scopus: 2Impact of Encapsulation Method on the Adsorbate Induced Electrical Instability of Monolayer Graphene(AVS Science and Technology Society, 2019) Kalkan, Sırrı Batuhan; Yanılmaz, Alper; Çelebi, CemMonolayer graphene transferred onto a set of silicon carbide (SiC) substrates was encapsulated with a thin SiO2 film in order to prevent its interaction with atmospheric adsorbates. The encapsulation of graphene samples was realized by using two different thin film growth methods such as thermal evaporation (TE) and state-of-the-art pulsed electron deposition (PED). The encapsulation efficiency of these two techniques on the structural and electrical characteristics of graphene was compared with each other. Scanning electron microscopy (SEM) analysis showed that unlike the SiO2 thin film grown with PED, structural defects like cracks were readily formed on TE grown films due to the lack of surface wettability. The electronic transport measurements revealed that the electrical resistivity of graphene has been increased by two orders of magnitude, and the carrier mobility has been subsequently decreased upon the encapsulation process with the PED method. However, in-vacuum transient photocurrent spectroscopy (TPS) measurements conducted for short periods and a few cycles showed that the graphene layer encapsulated with the PED grown SiO2 film is electrically far more stable than the one encapsulated with TE grown SiO2 film. The results of TPS measurements were related to the SEM images to unravel the mechanism behind the improved electrical stability of graphene samples encapsulated with the PED grown SiO2 film.Article Citation - WoS: 50Citation - Scopus: 52Monitoring the Characteristic Properties of Ga-Doped Zno by Raman Spectroscopy and Atomic Scale Calculations(Elsevier, 2019) Horzum, Şeyda; İyikanat, Fadıl; Senger, Ramazan Tuğrul; Çelebi, Cem; Sbeta, Mohamed; Yıldız, Abdullah; Serin, TülayWe experimentally and theoretically study how the structural and vibrational properties of zinc oxide (ZnO) are modified upon Gallium (Ga) doping. The characteristics of Ga-doped ZnO thin films which are synthesized by sol-gel spin coating method on glass substrates are monitored by using X-ray diffraction (XRD) and Raman scattering measurements. For atomic-level understanding of the experimental findings state-of-the-art density functional theory (DFT) based calculations are also performed. DFT calculations reveal that both the substitution and adsorption of Ga atoms in ZnO are energetically possible and substitutional doping in ZnO is the most favourable scenario. XRD measurements show that all the films are in wurtzite structure and the crystallite size of the films decreases with increasing Ga doping. In addition, Raman analysis show that strong vibrational modes at about 100 and 441 cm(-1) are associated with E-2(low) and E-2(high) phonon branches of ZnO, respectively. While the frequency of the E-2(low) mode downshifts with increasing Ga concentration, the E-2(high) phonon mode is not affected by the Ga doping. Furthermore, E-Ga phonon branch, stemming from the substituted Ga atoms, emerges at low frequencies. It is also seen that the Raman intensity of the E-G(a) peak linearly increases with increasing Ga concentration. Experimental results on the vibrational properties are in good agreement with the ab initio phonon calculations. (C) 2018 Elsevier B.V. All rights reserved.Article Citation - WoS: 22Citation - Scopus: 27Mechanisms Behind Slow Photoresponse Character of Pulsed Electron Deposited Zno Thin Films(Elsevier, 2020) Özdoğan, Mehmet; Çelebi, Cem; Utlu, GökhanSemiconducting Zinc Oxide (ZnO) is ideal candidate for ultraviolet (UV) photodetector due to its promising optoelectronic properties. Photoconductive type ZnO photodetectors, which is fabricated in metal-semiconductor-metal configuration, show mostly very high photoconductivity under UV light, but they are plagued by slow photoresponse time as slow as several tens of hours, even more. Most of the studies claimed that atmospheric adsorbates such as water and oxygen create charge traps states on the surface and remarkably increase both the photoconductivity and response time. There are also limited studies, which claim that the defect states acting as hole trap centers prolong response time significantly. However, the underlying physical mechanism is still unclear. Here we study the effects of both adsorbates and defect-related states on the photoresponse character of Pulsed Electron Deposited ZnO thin films. In order to distinguish between these two mechanisms, we have compared the time-dependent photoresponse measurements of bare-ZnO and SiO2 encapsulated-ZnO thin film samples taken under UV light and high vacuum. We show that the dominant mechanism of photoresponse in ZnO is the adsorption/desorption of oxygen and water molecules even when the measurement is performed in high vacuum. After the encapsulation of sample surface by a thin SiO2 layer, the adsorption/desorption rates can significantly improve, and the effects of these molecules partially removed.Article Citation - WoS: 24Citation - Scopus: 25Performance Enhancement of Inverted Perovskite Solar Cells Through Interface Engineering by Tpd Based Bidentate Self-Assembled Monolayers(Elsevier, 2020) Arkan, Emre; Arkan, M. Zeliha Yiğit; Ünal, Muhittin; Yalçın, Eyüp; Aydın, Hasan; Çelebi, Cem; Demic, ŞerafettinPerovskite solar cells (PSCs) have recently appeared as a promising photovoltaic technology and attracted great interest in both photovoltaic industry and academic community. Numerous active researches related to the material processing and operational aspects of device fabrication are under progress since PSCs have a great potential for attaining higher performance compared to that of other solar cell technologies. In particular, interfacial engineering is a crucial issue for obtaining high efficiency in solar cells where perovskite absorber layer is deposited between hole and electron transport layers. In inverted type architecture, PEDOT:PSS is used as both hole transport layer and surface modifier; but unfortunately, this material bears instability due to its acidic nature. Thus, self-assembled monolayers (SAMs) not only are considered as suitable alternative, but also their application is regarded as an efficient and cost effective method to modify electrode surface since it provides a robust and stable surface coverage. In this context, we have employed two novel N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) based SAM molecules to customize indium tin oxide (ITO) surface in inverted type PSCs. Furthermore, fine-tuning of spacer groups enables us to study device performance depending on molecular structure. This study proposes promising materials for anode interface engineering and provides a feasible approach for production of organic semiconductor based SAMs to achieve high performance PSCs.Article Citation - WoS: 22Citation - Scopus: 22Zinc Oxide and Metal Halide Perovskite Nanostructures Having Tunable Morphologies Grown by Nanosecond Laser Ablation for Light-Emitting Devices(American Chemical Society, 2020) Demirci Sankir, Nurdan; Abdullayeva, Nazrin; Altaf, Çiğdem Tuç; Kumtepe, Alihan; Yılmaz, Nazmi; Coşkun, Özlem; Sankir, Mehmet; Kurt, Hamza; Çelebi, Cem; Yanılmaz, AlperThis work reports a one-pot chemical bath deposition (CBD) method for the preparation of selectively grown, morphology-tunable zinc oxide (ZnO) nanostructures provided via straightforward nanosecond fiber laser ablation. Nanosecond fiber laser ablation is different from lithographic methods due to its simple, time saving, and efficient film scribing abilities. Here, multiple morphologies of the ZnO nanostructures on the same substrate have been grown via laser ablation of the ZnO seeding layer. Selective and controlled ablation of the titanium layer, ZnO growth inhibitor, resulted in systematic growth of nanorod arrays, while the application of extensive fluence energies resulted in the penetration of the laser beam until the glass substrate induced the nanoflake growth within the same CBD environment. The laser penetration depth has been numerically investigated via COMSOL Multiphysics heat module simulations, and the optical variations between two nanostructures (nanorod and nanoflake) have been examined via Lumerical FDTD. The simultaneous growth of two morphologies served as an efficient tool for the enhancement of photoluminescence intensities. It increased the average charge carrier lifetimes of the thin films from approximately 2.01 to 9.07 ns under the same excitation wavelengths. The amplification in PL performances has been accomplished via the capstone of all-inorganic halide perovskite (IHP) deposition that brought a successful conclusion to lifetime responses, which have been increased by 1.4-fold. The development of IHP sensitized nanoscaled multimorphological ZnO thin films can, therefore, be used as potential nanomaterials for light-emitting-device applications. © 2020 American Chemical Society.Article Citation - WoS: 6Citation - Scopus: 7Epitaxial Graphene Thermistor for Cryogenic Temperatures(Elsevier, 2018) Kalkan, Sırrı Batuhan; Yiğen, Seren; Çelebi, CemThe thermal responsivity of monolayer epitaxial graphene grown on the Si-face surface of semi-insulating SiC substrate is investigated as a function of temperature below 300 K. The measurements showed that adsorption/desorption of atmospheric adsorbates can randomly modify the electrical characteristics of graphene which is indeed undesirable for consistent temperature sensing operations. Therefore, in order to avoid the interaction between graphene layer and adsorbates, the grown graphene layer is encapsulated with a thin SiO2 film deposited by Pulsed Electron Deposition technique. Temperature dependent resistance measurement of encapsulated graphene exhibited a clear thermistor type behavior with negative temperature coefficient resistance character. Both the sensitivity and transient thermal responsivity of the SiO2/graphene/SiC sample were found to be enhanced greatly especially for the temperatures lower than 225 K. The experimentally obtained results suggest that SiO2 encapsulated epitaxial graphene on SiC can be used readily as an energy efficient and stable temperature sensing element in cryogenic applications.Article Citation - WoS: 28Citation - Scopus: 30P3HT-graphene bilayer electrode for Schottky junction photodetectors(IOP Publishing Ltd., 2018) Aydın, Hasan; Kalkan, Sırrı Batuhan; Varlıklı, Canan; Çelebi, CemWe have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.