Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 4Citation - Scopus: 5Enhanced Optoelectronic Properties of Magnetron Sputtered Ito/Ag Multilayers by Electro-Annealing(AVS, 2022) Uyanık, Zemzem; Türkoğlu, Fulya; Köseoğlu, Hasan; Ekmekçioğlu, Merve; Ata, Bengü; Demirhan, Yasemin; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, LütfiIndium tin oxide/silver/indium tin oxide (ITO/Ag/ITO) multilayers have attracted much attention to fulfill the growing need for high-performance transparent conducting oxide electrodes. To make these transparent multilayers work better, electro-annealing, which is a method of self-heating by electric current, can be effective. Moreover, the effect of current on ITO/Ag/ITO multilayers should be investigated to make sure that electronic devices will be reliable over their lifetime. In this study, ITO/Ag/ITO multilayer electrodes with varying Ag thicknesses were grown by DC magnetron sputtering at room temperature. Structural, optical, and electrical properties of these multilayers were investigated before and after electro-annealing. Measurement results revealed that improved optical transmittance and sheet resistance can be obtained by the optimization of Ag thickness for the as-grown ITO/Ag/ITO layers. The highest figure of merit (FoM) value of 17.37 × 10−3 Ω−1 with optical transmittance of 85.15% in the visible region and sheet resistance of 11.54 Ω/□ was obtained for the Ag thickness of 16.5 nm for as-grown samples. The electro-annealing of as-grown ITO/Ag/ITO multilayers led to improved optical behavior of the multilayer structure over a wide spectral range, especially in the near-infrared range. Electro-annealing also provided an improvement in the crystallinity and sheet resistance of the electrodes. The improvement of the electrical and optical properties of the structure enabled a FoM of 23.07 × 10−3 Ω−1 with the optical transmittance of 86.80% in the visible region and sheet resistance of 10.52 Ω/□. The findings of this work provide proper knowledge of the properties of ITO/Ag/ITO multilayers under electrical current and suggest that the overall performance of the multilayers can be improved by the electro-annealing process.Conference Object Investigation of In-Gap Field Enhancement at Terahertz Frequencies for a Metasurface Enhanced Sensor(Institute of Electrical and Electronics Engineers, 2021) Tugay, Halime; Altan, Hakan; Demirhan, Yasemin; Özyüzer, Lütfi; Sabah, CumaliThe arrangements of subwavelength inclusions in a metasurface can serve as an effective absorber for the terahertz region. When such an absorber is combined with a unique material, the absorption can induce effects that can lead to a change in the materials electrical properties. Vanadium dioxide shows a passive and reversible change from monoclinic insulator phase to metallic tetragonal rutile structure by using external stimuli such as temperature (340K), photo excitation, electric field, mechanical strain or magnetic field [1,2]. Upon absorption of the THz radiation, the high electric fields that are generated inside the gaps of the metasurface can serve as trigger points, as was shown previously using kV strength THz E-fields.Conference Object Reactive Ion Beam Etching of Superconducting Bi2212 by Ta/Pr and Pr'/ta/pr Masks for the Generation of Thz Waves(Institute of Electrical and Electronics Engineers Inc., 2009) Köseoğlu, Hasan; Türkoğlu, Fulya; Demirhan, Yasemin; Meriç Polster, Zeynep; Özyüzer, LütfiGeneration of powerful THz radiation from intrinsic Josephson Junctions (Ills) of Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi2212) may require mesas with large lateral dimension. However, there are difficulties in fabrication of perfect rectangular mesas. Mesa lateral angles should be close to 90 degrees to obtain IJJs with same planar dimensions for synchronization of IJJs. Since thick photoresist (PR) layer shades the lateral dimension of mesa during ion beam etching, we patterned Ta/PR and PR'/Ta/PR masks on Bi2212 and used selective ion etching to overcome this problem. The reactive ion beam etchings have done with ion beam of Ar, N(2) and O(2) and we have obtained mesas about 1 mu m with lateral angle of approximately 50 to 75 degrees which is better than the mesas fabricated with single layer mask.Conference Object Terahertz Transmission Through Patterened Vanadium Oxide Thin Films on Dielectric Substrates(SCITEPRESS, 2017) Akkaya, M.; Demirhan, Yasemin; Yüce, Hürriyet; Aygün, Gülnur; Özyüzer, Lütfi; Sabah, Cumali; Altan, HakanPatterned and unpatterned films of vanadium oxide grown on dielectric substrates such as fused silica and sapphire were grown and analysed by varying the temperature using terahertz time domain spectroscopy. After investigating the critical transition temperature near 340K, a well-known cross-shaped pattern was studied to observe any resonances upon transmission. Due to the poor conductivity of the films the frequency selective nature of the structure was not observed, however an etalon effect could be seen in the sapphire substrate as opposed to the fused silica substrate above the critical temperature. Dependence of the refractive index difference between substrates upon transmission of the THz pulse is likely in explaining this observed difference.Article Citation - WoS: 31Citation - Scopus: 33The Controllable Deposition of Large Area Roll-To Sputtered Ito Thin Films for Photovoltaic Applications(Elsevier, 2020) Demirhan, Yasemin; Köseoğlu, Hasan; Türkoğlu, Fulya; Uyanık, Zemzem; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, LütfiIn the present study, using a large area roll-to-roll DC magnetron sputtering system deposition of ITO thin films on polyethylene terephthalate (PET) substrates were achieved. In order to investigate the effect of growth conditions on the film properties all through the deposition process, optical emission spectroscopy (OES) analysis have been accomplished in a governable way. The consequences of Oxygen partial pressure and film thickness on electrical, and optical properties of the films were determined. It was shown that the intensity of optical emission peaks are subjected to the discharge power and as well as the O-2/Ar flow ratio. Large area, uniform ITO films with relatively high transparency and low electrical resistivity (R(2)(<)50 Omega/sqr) were succesfully deposited on PET substrates. The significance of both the figure of merit (FOM) and the optical band gap values on the performance of different TCO thin films were addressed. In this work, the obtained results suggest that the overall performance is sufficient to implement the ITO films in photovoltaic and OLED applications. (C) 2019 Elsevier Ltd. All rights reserved.Article Citation - WoS: 21Citation - Scopus: 22Investigation of Electron Beam Lithography Effects on Metal-Insulator Transition Behavior of Vanadium Dioxide(IOP Publishing Ltd., 2017) Yüce, Hürriyet; Alaboz, Hakan; Demirhan, Yasemin; Özdemir, M.; Özyüzer, Lütfi; Aygün, GülnurVanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.Article Fabrication of Bi2212 Single Crystal Bolometer for Detection of Terahertz Waves(Springer Verlag, 2017) Semerci, Tuğçe; Demirhan, Yasemin; Miyakawa, Nobuaki; Wang, Huabing; Özyüzer, LütfiTerahertz (THz) radiation is in powerful region of electromagnetic spectrum because of prosperous application areas yet deficiency still exists about sources and detectors in despite of improvements of the research field in this range. This gap can be filled by focusing on development of THz detectors. Therefore, bolometers were preferred through many detectors due to detection sensitivity above 1 THz. In this study, Bi2Sr2CaCu2O8+δ (Bi2212) single crystals were used to fabricate THz bolometric detector. Bi2212 single crystals were transferred on sapphire substrate by cleavage process and e-beam lithography and ion beam etching were used to fabricate the microchip clean room facilities. Customdesigned cryogenic cryostat was used for a-b axis electrical and THz response measurements with liquid nitrogen cooled system. After electrical measurements, Bi2212 microchips detected the signals using Stefan-Boltzmann Lamp and response time were calculated. This study have shown with our experimental results that Bi2212 single crystals are potential candidates for THz bolometric detectors.Article Citation - WoS: 7Citation - Scopus: 7Comparative Study of Annealing and Gold Dopant Effect on Dc Sputtered Vanadium Oxide Films for Bolometer Applications(Springer Verlag, 2017) Alaboz, Hakan; Demirhan, Yasemin; Yüce, Hürriyet; Aygün, Gülnur; Özyüzer, LütfiVanadium oxide (VOx) thin film has been widely used for IR detectors and it is one of the promising materials for THz detectors due to its high temperature coefficient of resistance (TCR) values. VOx films with proper TCR values have also high resistance and it restricts bolometer performance especially for uncooled bolometers. To overcome this problem, deposition at elevated temperatures or annealing approach has been accepted and used but gold co-deposition approach has been proposed recently. In this study, vanadium oxide films were fabricated on high resistivity silicon substrates by reactive direct current magnetron sputtering in different O2/Ar atmosphere at room temperature. We investigated influence of oxygen partial pressure during deposition process and fabricated VOx thin films with sufficient TCR values for bolometer applications. In order to decrease resistivity of the deposited films, post annealing and gold doping approaches were performed separately. Effect of both post annealing process and gold doping process on structural and electrical properties of VOx thin films deposited at room temperature were investigated and detailed comparison between these methods were presented. We obtained the best possible approach to obtain optimum conditions for the highly reproducible VOx thin films which have the best resistivity and suitable TCR value for bolometer applications.Article Citation - WoS: 13Citation - Scopus: 13Fourcross Shaped Metamaterial Filters Fabricated From High Temperature Superconducting Ybco and Au Thin Films for Terahertz Waves(IOP Publishing Ltd., 2017) Demirhan, Yasemin; Alaboz, Hakan; Nebioğlu, Mehmet Ali; Mulla, B.; Akkaya, M.; Altan, Hakan; Sabah, Cumali; Özyüzer, LütfiIn this study, we present a new, unique fourcross shaped metamaterial terahertz (THz) filter fabricated from both gold thin films and YBa2Cu3O7-δ high Tc superconducting thin films. A commercial electromagnetic simulation software, CST Microwave Studio, is used to design and optimize the metamaterial filter structures. The proposed fourcross shaped rectangular filter structure consists of periodic metallic rings where strip lines are located at the sides of the ring. Fourcross metamaterial filters are fabricated by using e-beam lithography and ion beam exhing techniques. Terahertz time-domain spectroscopy measurements validated the design predictions for both the center frequencies and bandwidths of the resonances due to the fourcross structures. The resonance switching of the transmission spectra was investigated by lowering the temperature below the critical transition temperature. This resonance switching effect is not observed in filters made up of metals. This novel fourcross rectangular resonator with a temperature-dependent resonance behavior holds great potential for active, tunable and low loss THz devices for imaging, sensing, and detection applications.Article Citation - WoS: 7Citation - Scopus: 7An Indium Tin Oxide Metasurface Filter for Terahertz Applications: Design, Fabrication, and Characterization(World Scientific Publishing Co. Pte Ltd, 2017) Nebioğlu, Mehmet Ali; Takan, Taylan; Altan, Hakan; Demirhan, Yasemin; Alaboz, Hakan; Özyüzer, Lütfi; Sabah, CumaliIn this paper, using a cross-shaped complementary Indium Tin Oxide (ITO)-based metasurface design, the transmission of THz radiation is shown to be filtered within the 3 dB level from maximum in the frequency range of interest (333 GHz). Various metasurface structures primarily composed of cross-shaped openings with a 400 micron unit cell size are patterned on top of 1750 micron thick fused silica substrates. They are patterned using UV lithography methods after the films were grown using DC sputtering. The fabricated structures were characterized using Terahertz Time Domain Spectroscopy (THz-TDS) measurement technique. The measured transmission agrees well with the simulation of the structure for four different samples with different geometries. These results suggest that metasurface and/or metamaterial patterns based on ITO in visibly transparent media can be utilized for filtering of frequencies in the long wavelength spectrum. These types of filters can be very useful in the near future for THz communication and security applications. ©