Physics / Fizik

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  • Article
    Citation - WoS: 63
    Citation - Scopus: 73
    Angular Analysis and Branching Fraction Measurement of the Decay B-0 -> K*(0)mu(+)mu(-)
    (Elsevier, 2013) Demir, Durmuş Ali; Karapınar, Güler
    The angular distributions and the differential branching fraction of the decay B-0 -> K*(892)(0)mu(+)mu(-) are studied using a data sample corresponding to an integrated luminosity of 5.2 fb(-1) collected with the CMS detector at the LHC in pp collisions at root s = 7 TeV. From more than 400 signal decays, the forward-backward asymmetry of the muons, the K*(892)(0) longitudinal polarization fraction, and the differential branching fraction are determined as a function of the square of the dimuon invariant mass. The measurements are in good agreement with standard model predictions. (C) 2013 CERN. Published by Elsevier B.V. All rights reserved.
  • Article
    Citation - WoS: 39
    Citation - Scopus: 46
    Surface Free Energy Analysis of Ito/Au Multilayer Thin Films on Polycarbonate Substrate by Apparent Contact Angle Measurements
    (Elsevier, 2020) Özbay, Salih; Erdoğan, Nursev; Erden, Fuat; Ekmekçioğlu, Merve; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, Lütfi
    A detailed surface free energy (SFE) knowledge of transparent conducing oxide (TCO)/metal/TCO electrodes is necessary for their applications related to surface wettability. However, SFE analysis of these surfaces has not been performed systematically previously. In this study, ITO and ITO/Au/ITO multilayer thin films were coated onto O-2 plasma treated polycarbonate (PC) substrates by magnetron sputtering. The wettability characteristics of untreated PC, O-2 plasma treated PC, ITO, Au interlayer, and ITO/Au/ITO multilayer thin films were evaluated by apparent contact angle measurements of nine different test liquids having various surface tensions. Following this, Lifshitz-van der Waals, acidic, basic, dispersive, and polar components of SFE were calculated using acidbase, geometric and harmonic mean approaches. In the present study, in which the significance of calculation methods and selected liquid pairs on SFE parameters were investigated, the effect of Au interlayer presence on SFE parameters were also evaluated simultaneously. The results showed that the total SFE values of ITO/Au/ITO multilayer thin films were found to be higher than that of ITO surface. The reasons behind this difference were discussed in terms of SFE components obtained using various liquid pairs by different methods. The results were also supported with XRD, XPS, AFM, and TEM analysis.
  • Article
    Citation - WoS: 12
    Citation - Scopus: 13
    Electronic and Magnetic Properties of Graphene Quantum Dots With Two Charged Vacancies
    (Elsevier, 2020) Kul, Erdoğan Bulut; Polat, Mustafa; Güçlü, Alev Devrim
    Electronic and magnetic properties of a system of two charged vacancies in hexagonal shaped graphene quantum dots are investigated using a mean-field Hubbard model as a function of the Coulomb potential strength ? of the charge impurities and the distance R between them. For ?=0, the magnetic properties of the vacancies are dictated by Lieb's rules where the opposite (same) sublattice vacancies are coupled antiferromagnetically (ferromagnetically) and exhibit Fermi oscillations. Here, we demonstrate the emergence of a non-magnetic regime within the subcritical region: as the Coulomb potential strength is increased to ??0.1, before reaching the frustrated atomic collapse regime, the magnetization is strongly suppressed and the ground state total spin projection is given by Sz=0 both for opposite and same sublattice vacancy configurations. When long-range electron–electron interactions are included within extended mean-field Hubbard model, the critical value for the frustrated collapse increases from ?cf?0.28 to ?cf?0.36 for R<27Å. © 2020 Elsevier Ltd
  • Article
    Citation - WoS: 38
    Citation - Scopus: 40
    Influences of Deposition Time and Ph on Magnetic Nife Nanowires Fabrication
    (Elsevier, 2009) Atalay, Funda E.; Kaya, Harun; Atalay, Selcuk; Tarı, Süleyman
    In this work, NiFe nanowires were grown into highly ordered porous anodic alumina oxide (AAO) templates by dc electrodeposition at various deposition times and pH values. During the deposition process some electrochemical bath parameters such as ion content, deposition voltage, and temperature of solution were kept constant. The morphological properties of the nanowire arrays were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM), the chemical composition was determined by examination of the energy dispersive X-ray (EDX) spectra, and the magnetic behavior of the arrays was determined by vibrating sample magnetometer (VSM). (C) 2008 Elsevier B.V. All rights reserved.
  • Article
    Citation - WoS: 24
    Citation - Scopus: 24
    The Effect of Back Electrode on the Formation of Electrodeposited Conife Magnetic Nanotubes and Nanowires
    (Elsevier, 2010) Atalay, Funda E.; Kaya, Harun; Yağmur, Vedat; Tarı, Süleyman; Atalay, Selçuk; Avşar, Duygu
    The electrodeposition of cobalt + nickel + iron alloy nanostructures in aqueous sulfate solution has been studied using vitreous templates placed on highly ordered porous anodic alumina oxide (AAO). During the deposition process some electrochemical bath parameters such as ion content, deposition voltage, pH and temperature of solution were kept constant. The morphological properties of the nanostructures were studied by scanning electron microscopy (SEM) and the chemical composition was determined by examination of the energy dispersive X-ray (EDX) spectra. The magnetic behaviour of the arrays was determined with a vibrating sample magnetometer (VSM). Voltammetric and galvanostatic results indicate that the back electrodes placed on AAO plays the main role in obtaining nanowire or nanotube structured material. (C) 2009 Elsevier B. V. All rights reserved.
  • Article
    Citation - WoS: 10
    Citation - Scopus: 10
    The Comparison of Transient Photocurrent Spectroscopy Measurements of Pulsed Electron Deposited Zno Thin Film for Air and Vacuum Ambient Conditions
    (Elsevier, 2019) Özdoğan, Mehmet; Yiğen, Serap; Çelebi, Cem; Utlu, Gökhan
    Photoconduction mechanism of ZnO thin films that produced by Pulsed Electron Deposition method is systematically investigated by taking Transient Photocurrent Spectroscopy measurements for different atmospheres including high vacuum and air environments. Response and recovery rates of photocurrent in the air are faster than the rates in high vacuum condition. The results in the presented work clearly indicate that the photoconduction of ZnO thin films with high surface-area-to-volume ratio are surface-related and mostly governed by adsorption/desorption of oxygen and water molecules in the atmosphere. Therefore, the high surface interaction tendency of ZnO surface with the atmosphere inevitably leads to charge transfer from surface to adsorbates and/or vice versa.
  • Article
    Citation - WoS: 31
    Citation - Scopus: 33
    The Controllable Deposition of Large Area Roll-To Sputtered Ito Thin Films for Photovoltaic Applications
    (Elsevier, 2020) Demirhan, Yasemin; Köseoğlu, Hasan; Türkoğlu, Fulya; Uyanık, Zemzem; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, Lütfi
    In the present study, using a large area roll-to-roll DC magnetron sputtering system deposition of ITO thin films on polyethylene terephthalate (PET) substrates were achieved. In order to investigate the effect of growth conditions on the film properties all through the deposition process, optical emission spectroscopy (OES) analysis have been accomplished in a governable way. The consequences of Oxygen partial pressure and film thickness on electrical, and optical properties of the films were determined. It was shown that the intensity of optical emission peaks are subjected to the discharge power and as well as the O-2/Ar flow ratio. Large area, uniform ITO films with relatively high transparency and low electrical resistivity (R(2)(<)50 Omega/sqr) were succesfully deposited on PET substrates. The significance of both the figure of merit (FOM) and the optical band gap values on the performance of different TCO thin films were addressed. In this work, the obtained results suggest that the overall performance is sufficient to implement the ITO films in photovoltaic and OLED applications. (C) 2019 Elsevier Ltd. All rights reserved.
  • Article
    Citation - WoS: 50
    Citation - Scopus: 52
    Monitoring the Characteristic Properties of Ga-Doped Zno by Raman Spectroscopy and Atomic Scale Calculations
    (Elsevier, 2019) Horzum, Şeyda; İyikanat, Fadıl; Senger, Ramazan Tuğrul; Çelebi, Cem; Sbeta, Mohamed; Yıldız, Abdullah; Serin, Tülay
    We experimentally and theoretically study how the structural and vibrational properties of zinc oxide (ZnO) are modified upon Gallium (Ga) doping. The characteristics of Ga-doped ZnO thin films which are synthesized by sol-gel spin coating method on glass substrates are monitored by using X-ray diffraction (XRD) and Raman scattering measurements. For atomic-level understanding of the experimental findings state-of-the-art density functional theory (DFT) based calculations are also performed. DFT calculations reveal that both the substitution and adsorption of Ga atoms in ZnO are energetically possible and substitutional doping in ZnO is the most favourable scenario. XRD measurements show that all the films are in wurtzite structure and the crystallite size of the films decreases with increasing Ga doping. In addition, Raman analysis show that strong vibrational modes at about 100 and 441 cm(-1) are associated with E-2(low) and E-2(high) phonon branches of ZnO, respectively. While the frequency of the E-2(low) mode downshifts with increasing Ga concentration, the E-2(high) phonon mode is not affected by the Ga doping. Furthermore, E-Ga phonon branch, stemming from the substituted Ga atoms, emerges at low frequencies. It is also seen that the Raman intensity of the E-G(a) peak linearly increases with increasing Ga concentration. Experimental results on the vibrational properties are in good agreement with the ab initio phonon calculations. (C) 2018 Elsevier B.V. All rights reserved.
  • Article
    Citation - WoS: 1
    Interaction of Ge With Single Layer Gaas: From Ge-Island Nucleation To Formation of Novel Stable Monolayers
    (Elsevier, 2020) Sözen, Yiğit; Eren, İsmail; Özen, Sercan; Yağmurcukardeş, Mehmet; Şahin, Hasan
    In this study, reactivity of single-layer GaAs against Ge atoms is studied by means of ab initio density functional theory calculations. Firstly, it is shown that Ge atoms interact quite strongly with the GaAs layer which allows the formation of Ge islands while it hinders the growth of detached germanene monolayers. It is also predicted that adsorption of Ge atoms on GaAs single-layer lead to formation of two novel stable single-layer crystal structures, namely 1H-GaGeAs and 1H(A)-GaGeAs. Both the total energy optimizations and the calculated vibrational spectra indicate the dynamical stability of both single layer structures. Moreover, although both structures crystallize in 1H phase, 1H-GaGeAs and 1H(A)-GaGeAs exhibit distinctive vibrational features in their Raman spectra which is quite important for distinguishing the structures. In contrast to the semiconducting nature of single-layer GaAs, both polytypes of GaGeAs exhibit metallic behavior confirmed by the electronic band dispersions. Furthermore, the linear-elastic constants, in-plane stiffness and Poisson ratio, reveal the ultrasoft nature of the GaAs and GaGeAs structures and the rigidity of GaAs is found to be slightly enhanced via Ge adsorption. With their stable, ultra-thin and metallic properties, predicted single-layer GaGeAs structures can be promising candidates for nanoscale electronic and mechanical applications.
  • Article
    Citation - WoS: 22
    Citation - Scopus: 27
    Mechanisms Behind Slow Photoresponse Character of Pulsed Electron Deposited Zno Thin Films
    (Elsevier, 2020) Özdoğan, Mehmet; Çelebi, Cem; Utlu, Gökhan
    Semiconducting Zinc Oxide (ZnO) is ideal candidate for ultraviolet (UV) photodetector due to its promising optoelectronic properties. Photoconductive type ZnO photodetectors, which is fabricated in metal-semiconductor-metal configuration, show mostly very high photoconductivity under UV light, but they are plagued by slow photoresponse time as slow as several tens of hours, even more. Most of the studies claimed that atmospheric adsorbates such as water and oxygen create charge traps states on the surface and remarkably increase both the photoconductivity and response time. There are also limited studies, which claim that the defect states acting as hole trap centers prolong response time significantly. However, the underlying physical mechanism is still unclear. Here we study the effects of both adsorbates and defect-related states on the photoresponse character of Pulsed Electron Deposited ZnO thin films. In order to distinguish between these two mechanisms, we have compared the time-dependent photoresponse measurements of bare-ZnO and SiO2 encapsulated-ZnO thin film samples taken under UV light and high vacuum. We show that the dominant mechanism of photoresponse in ZnO is the adsorption/desorption of oxygen and water molecules even when the measurement is performed in high vacuum. After the encapsulation of sample surface by a thin SiO2 layer, the adsorption/desorption rates can significantly improve, and the effects of these molecules partially removed.