Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Research Project Üstüniletken magnezyum borür (MgB2) tellerinin yüksek akım ve yüksek manyetik alan uygulamaları için geliştirilmesi(2008) Okur, Salih; Tarhan, Enver; Büyükköse, Serkan; Özyüzer, Lütfi; Tanoğlu, Metin; Emirdağ, Mehtap; 04.05. Department of Pyhsics; 03.10. Department of Mechanical Engineering; 04.01. Department of Chemistry; 03. Faculty of Engineering; 04. Faculty of Science; 01. Izmir Institute of Technology[No Abstract Available]Article Citation - WoS: 2Citation - Scopus: 2Scanning Probe Oxidation Lithography on Ta Thin Films(American Scientific Publishers, 2008) Okur, Salih; Büyükköse, Serkan; Okur, Salih; Tarı, Süleyman; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyA Semi-Contact Scanning Probe Lithography Technique (SC-SPL) has been applied to create nano-oxide patterns on Ta thin films grown by DC magnetron sputtering method on SiO 2/Si substrates. The height and linewidth profiles of nano-oxide lines created by a conductive AFM tip on Ta film surfaces were measured as a function of applied voltage, oxidation time, humidity, and tip apex curvature. The AFM surface measurements show that the height of the oxides increases linearly with increasing voltage; but there was no oxide growth, when less than 4 V was applied even at 85% relative humidity. Electrical measurements were performed and the resistivities of the TaO x layer and Ta film were obtained as 5.76 × 10 8 and 1.4 × 10 5 Ohm-cm, respectively.Article Citation - WoS: 12Citation - Scopus: 15Local Oxidation Nanolithography on Hf Thin Films Using Atomic Force Microscopy (afm)(IOP Publishing Ltd., 2009) Büyükköse, Serkan; Okur, Salih; Okur, Salih; Aygün, Gülnur; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyWell controlled Hf oxide patterns have been grown on a flat Hf thin film surface produced by the dc magnetron sputtering method on Si and SiOx substrates. These patterns have been created by using the technique of semi-contact scanning probe lithography (SC-SPL). The thickness and width of the oxide patterns have been measured as a function of applied voltage, duration and relative humidity. There is a threshold voltage even at 87% humidity, due to insufficient energy required to start the oxide growth process for a measurable oxide protrusion. Electrical characterization was also performed via the I-V curves of Hf and HfOx structures, and the resistivity of HfO x was found to be 4.284 × 109 Ω cm. In addition to the I-V curves, electric force microscopy and spreading surface resistance images of Hf and HfOx were obtained.