Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Author: search.filters.author.Abukay, DoğanSubject: search.filters.subject.Critical current density

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  • Article
    Citation - WoS: 18
    Citation - Scopus: 18
    The Effects of the Post-Annealing Time on the Growth Mechanism of Bi2sr2ca1cu2o8+ Thin Films Produced on Mgo (100) Single Crystal Substrates by Pulsed Laser Deposition (pld)
    (Elsevier Ltd., 2016) Nane, Onur; Özçelik, Bekir; Abukay, Doğan
    Bi2Sr2Ca1Cu2O8+δï thin films were deposited on MgO (100) substrates by pulsed laser deposition (PLD). The effects of post-annealing time on the phase formation, the structural and superconducting properties of the films have been investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature dependent resistivity (R-T), atomic force microscopy (AFM), and DC magnetization measurements. The films deposited at 600 °C were post-annealed in an atmosphere of a gas mixture of Ar (93%) and O2 (7%), at 860 °C for 10, 30, and 60 min. All films have demonstrated a mainly single phase of 2212 with a high crystallinity (FWHM0.159°) and c-axis oriented. The critical temperature, TC, of the films annealed for 10, 30, and 60 min were obtained as 77, 78, and 78 K, respectively. The highest critical current density, JC, was calculated as 3.34×107 A/cm2 for the film annealed at 860 °C for 30 min at 10 K.
  • Article
    Citation - WoS: 9
    Citation - Scopus: 10
    The Effects of the Post-Annealing Temperature on the Growth Mechanism of Bi2sr2ca1cu2o8+ ? Thin Films Produced on Mgo (1 0 0) Single Crystal Substrates by Pulsed Laser Deposition (pld)
    (Elsevier Ltd., 2013) Nane, O.; Özçelik, Bekir; Abukay, Doğan
    The effects of post-annealing temperature were investigated on Bi 2Sr2Ca1Cu2O8+ ∂ thin films deposited on MgO (1 0 0) substrates by pulsed laser deposition (PLD). The structural and superconducting properties of the films have been determined by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature dependent resistivity (R-T), and DC magnetization measurements. The films which were deposited at 600 C were post-annealed in an atmosphere of a gas mixture of Ar (93%) and O2 (7%), at temperature ranging between 800 and 880 C. This resulted in films which exhibited a single phase of 2212 with a high crystallinity (FWHM ≈ 0.16) and texturing along the c-axis, perpendicular to the plane of the substrate. An optimum temperature of 860 C was found for the post-annealing thermal treatment. The critical temperature, TC, of the films was measured as 82 K and the critical current density, JC, was calculated as 3 × 107 A/cm2 for the film annealed at 860 C.