Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Author: search.filters.author.Akça, Fatime GülşahInstitution Author: search.filters.institutionAuthor.Köseoğlu, Hasan

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Now showing 1 - 2 of 2
  • Article
    Citation - WoS: 21
    Citation - Scopus: 24
    Effect of Defects and Secondary Phases in Cu2znsns4 Absorber Material on the Performance of Zn(o,s) Buffered Devices
    (Elsevier Ltd., 2019) Türkoğlu, Fulya; Aygün, Gülnur; Köseoğlu, Hasan; Cantaş, Ayten; Akça, Fatime Gülşah; Meriç, Ece; Buldu, Dilara Gökçen; Aygün, Gülnur; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    Copper zinc fin sulfide (CZTS) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-toxic elements contrary to other chalcogenide based solar cells. In the present work, CZTS absorber layers were prepared following a two-stage process: firstly, a stack of metal precursors (Copper (Cu)/Tin (Sn)/Zinc (Zn)/Copper (Cu)) were deposited on molybdenum (Mo) substrate by magnetron sputtering, then this stack was annealed under S atmosphere inside a tubular furnace. CZTS thin films were investigated using energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The effect of sulfurization time and the thickness of top and bottom Cu layer in precursors on the properties of CZTS thin films were investigated. The importance of Cu thickness adjacent to Sn to avoid detrimental phases was addressed. The significance of sulfurization time to restrict the Sn and Zn losses, formation of oxides such as fin dioxide and zinc oxide, and formation of molybdenum disulfide and voids between Mo/CZTS interface was also addressed. Moreover, cadmium sulfide buffer layer, which is conventionally used in CZTS solar cells, is replaced by an environmentally friendly alternative zinc oxysulfide buffer layer.
  • Article
    Citation - WoS: 60
    Citation - Scopus: 64
    Improvement of Optical and Electrical Properties of Ito Thin Films by Electro-Annealing
    (Elsevier Ltd., 2015) Köseoğlu, Hasan; Türkoğlu, Fulya; Aygün, Gülnur; Yaman, Mutlu Devran; Akça, Fatime Gülşah; Kurt, Metin; Özyüzer, Lütfi; Özyüzer, Lütfi; 01. Izmir Institute of Technology; 04.05. Department of Pyhsics; 04. Faculty of Science
    The effect of electro-annealing in vacuum and air on the optical and electrical properties of ITO thin films grown by large area DC magnetron sputtering was investigated. Moreover, the performances of the electro-annealed ITO thin films in vacuum and air were compared. Electro-annealing was performed by applying 0.75, 1.00, 1.25 and 1.50 A constant ac current to the ITO thin films. It was observed that the crystallinity of the films was better for the ITO thin films electro-annealed in vacuum. The changes in sheet resistance of electro-annealed ITO thin films with applied currents were detailed. The transmittance of the films increased for both electro-annealing in vacuum and air. A correlation between band-gap and resistivity for all of the electro-annealed thin films was observed.