Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 56Citation - Scopus: 62Cross-like terahertz metamaterial absorber for sensing applications(Springer Verlag, 2018) Sabah, Cumali; Mulla, Batuhan; Altan, Hakan; Özyüzer, LütfiIn this work, a new multiband terahertz metamaterial absorber is designed and characterised by numerical simulation method. In addition, the utilisation of the proposed absorber as a sensor is also investigated. The dielectric and thickness sensing characteristics are analysed. The proposed multiband metamaterial absorber has the ability for utilising the terahertz region up to 2 THz. According to the results, it is found that the proposed absorber is capable of sensing unknown materials and material thickness with any of its five absorption bands. The sensitivity of the proposed sensor is 6.57 GHz / unit sensitivity for dielectric sensing and 7.66GHz/μm for thickness sensing.Article Citation - WoS: 6Citation - Scopus: 7Thermally and Optically Tunable Sub-Terahertz Superconducting Fishnet Metamaterial(Elsevier Ltd., 2018) Sabah, Cumali; Mulla, Batuhan; Altan, Hakan; Özyüzer, LütfiIn this paper, a novel fishnet metamaterial structure is designed and analyzed under different material combinations and under different active controlling techniques. The results indicate that, the proposed fishnet metamaterial has a single resonance with double negativity at 0.39 THz when quartz substrate and aluminum is utilized in the design. Moreover, when the metallic parts are replaced with YBCO, the proposed design also exhibits double negativity with a stronger resonance and can be used as a switch between the double negative and single negative modes if the temperature is altered. In addition to these, when substrate (quartz) is replaced with MgO, the resonance shifts from 0.39 THz to 0.26 THz and shows double negativity. Moreover, switching properties under illumination can also be obtained when the silicon is utilized in the design (MgO-YBCO combination). According to these results, it is found that, in the case that the conductivity of silicon exceeds a certain value, the character of the resonance changes from double negative to the single negative mode.
