Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 3Citation - Scopus: 3Amperometric Detection of Nh3 by Aromatic Sam-Modified Graphene(IEEE, 2023) Yağmurcukardeş, Nesli; Bayram, Abdullah; Aydın, Hasan; Can, Mustafa; Demiç, Şerafettin; Açıkbaş, Yaşar; Çelebi, CemAmmonia (NH3) is a toxic substance resulting in various acute and chronic effects on individuals. NH3 detection, monitoring methods, and detection tools are desperately needed. In this work, we improved the NH3 sensing capabilities of grapheme (GP) films deposited by chemical vapor deposition (CVD) by modifying aromatic self-assembled monolayer (SAM) molecules such as 5-[(3-methylphenyl) (phenyl) amino] isophthalic acid (MeIPA) and 5-(diphenyl)amino] isophthalic acid (PhIPA) on amperometric detection method. Morphological investigations of the films were carried out by optical and scanning electron microscopy (SEM). Surface potential was characterized with Kelvin probe force microscopy (KPFM), and vibrational properties were characterized with Raman spectroscopy. MeIPA modification increased NH3 uptake by two times compared to unmodified GP. The results indicated that the SAM modification enhanced NH3 molecule adsorption and improved its periodic reversible and reproducible response using the amperometric detection system, indicating that SAM molecules might be a feasible probe for NH3. © 2001-2012 IEEE.Article Citation - WoS: 8Citation - Scopus: 10Experimental and Computational Investigation of Graphene/Sams Schottky Diodes(Elsevier Ltd., 2018) Aydın, Hasan; Bacaksız, Cihan; Yağmurcukardeş, Nesli; Karakaya, Caner; Mermer, Ömer; Can, Mustafa; Senger, Ramazan Tuğrul; Şahin, Hasan; Selamet, YusufWe have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1′:3′1′-terphenyl-5′ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current–voltage (I–V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)–V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π–π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.Article Citation - WoS: 4Citation - Scopus: 4Effect of Aromatic Sams Molecules on Graphene/Silicon Schottky Diode Performance(Electrochemical Society, Inc., 2016) Yağmurcukardeş, Nesli; Aydın, Hasan; Can, Mustafa; Yanılmaz, Alper; Mermer, Ömer; Okur, Salih; Selamet, YusufAu/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height φB values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively.Article Citation - WoS: 35Citation - Scopus: 37Modification of Ito Surface Using Aromatic Small Molecules With Carboxylic Acid Groups for Oled Applications(Elsevier Ltd., 2011) Havare, Ali Kemal; Can, Mustafa; Demiç, Şerafettin; Okur, Salih; Kuş, Mahmut; Aydın, Hasan; Yağmurcukardeş, Nesli; Tarı, Süleyman4-[(3-Methylphenyl)(phenyl)amino]benzoic acid (MPPBA) was synthesized in order to facilitate the hole-injection in Organic Light Emitting Diodes (OLED). MPPBA was applied to form self-assembled monolayer (SAM) on indium tin oxide (ITO) anode to align energy-level at the interface between organic semiconductor material (TPD) and inorganic anode (ITO) in OLED devices. The modified surface was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM). KPFM was used to measure the surface potential and work function between the tip and the ITO surface modified by SAM technique using MPPBA. The OLED devices (ITO/MPPBA/TPD/Alq3/Al) fabricated with SAM-modified ITO substrates showed lower turn-on voltages and enhanced diode current compare to the OLED devices fabricated with bare ITO substrates.