Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
Browse
11 results
Search Results
Research Project Üstün dielektrik özelliklere sahip ince HfO2 filmlerin büyütmeye eş zamanlı spektroskopik elipsometrik saçtırma yöntemi ile üretimi ve karakterizasyonu(2010) Aygün Özyüzer, Gülnur; Cantaş, Ayten; Sağlam, Hilal; Turan, Raşit; Selamet, YusufSaçtırma (sputtering) sistemi tekniği kullanılarak, in-situ spektroskopik elipsometre ile kontrollü vakum ortamında, Si pulu üzerine HfO2 filminin kontrollü olarak büyütülmesi gerçekleştirilmiştir. Büyütülen oksit tabakaları çeşitli tanı ve analiz teknikleri (Elipsometre, FTIR, XRD, XPS) ile incelenmiştir. Oksit film büyütme sartları, oksitin HfO2 moduna sahip olması durumu göz önünde bulundurularak çeşitli ölçüm tekniklerinden elde edilen sonuçlara göre incelenmiş ve saçtırma yöntemi ile film büyütme işleminin optimizasyonu yapılmıştır. Spektroskopik elipsometre (SE) aracılığıyla, büyütmeye es zamanlı olarak alınan film kalınlığının, kırılma indisi ve kompleks dielektrik sabitinin gerçel kısmının film büyütme zamanına göre değişimi incelenmiştir. FTIR kullanılarak, büyütülen filmdeki yapıların kimyasal bağları incelenilmiştir. XRD ile yapısal analizler elde edilmiştir. XPS tekniği ile filmin derinlik analizi gerçekleştirilmiştir. Yapısal ve optiksel açıdan en iyi özelliklere sahip örnekler kullanılarak Metal Oksit Yarıiletken (MOS) aygıtlar üretilmiş ve bu aygıtların elektriksel karakterizasyonu elde edilmiştir. ‘Üretim – karakterizasyon – büyüme koşullarının iyileştirilmesi’ döngüsü başarı ile kurulmuş olup şu sonuçlar elde edilmiştir: (a) En uygun oksitleme parametresi olarak kullandığımız en düşük O2/Ar gaz oranı, yani 0.1, ve uygulanan güç açısından 30-40 Watt belirlenmiştir. (b) SiO2 arayüz oluşumu tamamen engellenememiştir ve arayüzde HfSixOy arayüzü elde edilmiştir. (c) Yıgın (bulk) halindeki HfO2 malzemenin 632 nm de sahip olduğu 2.1 değerindeki kırılma indisi değerine oldukça yaklaşılmıştır.Article Citation - WoS: 6Citation - Scopus: 5Structural and Optical Characteristics of Antimony Selenosulfide Thin Films Prepared by Two-Step Method(Springer, 2022) Türkoğlu, Fulya; Ekren, Memduh Emirhan; Cantaş, Ayten; Yakıncı, Kübra; Gündoğan, Hazal; Aygün, Gülnur; Özyüzer, LütfiAntimony triselenide (Sb2Se3) is one of the most promising absorber material choices among the inorganic semiconductors that has attracted much attention today. However, highest recorded efficiencies for Sb2Se3 solar cells are still lower than ideal. Exploring antimony selenosulfide (Sb-2(SxSe1-x)(3)) to increase device performance is one option because some features of alloyed Sb-2(SxSe1-x)(3) depend on composition such as bandgap and band position. In this study, two-step process was used to grow Sb-2(SxSe1-x)(3) thin films. In the first stage, Sb2Se3 thin films were deposited on soda lime glass substrates using direct current magnetron sputtering technique. In the second stage, Sb2Se3 thin films were exposed to sulfurization process in a quartz ampoule to obtain Sb-2(SxSe1-x)(3) thin films. Characterization results showed that morphological, optical, and structural properties of Sb-2(SxSe1-x)(3) thin films grown by presented method were highly dependent on amount of sulfur in the films. By the adjustment of the S/S + Se atomic ratio, Sb-2(SxSe1-x)(3) absorber materials with suitable bandgap, favorable orientation and compact morphology can be obtained for photovoltaic applications.Article Citation - WoS: 21Citation - Scopus: 24Effect of Defects and Secondary Phases in Cu2znsns4 Absorber Material on the Performance of Zn(o,s) Buffered Devices(Elsevier Ltd., 2019) Türkoğlu, Fulya; Köseoğlu, Hasan; Cantaş, Ayten; Akça, Fatime Gülşah; Meriç, Ece; Buldu, Dilara Gökçen; Aygün, GülnurCopper zinc fin sulfide (CZTS) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-toxic elements contrary to other chalcogenide based solar cells. In the present work, CZTS absorber layers were prepared following a two-stage process: firstly, a stack of metal precursors (Copper (Cu)/Tin (Sn)/Zinc (Zn)/Copper (Cu)) were deposited on molybdenum (Mo) substrate by magnetron sputtering, then this stack was annealed under S atmosphere inside a tubular furnace. CZTS thin films were investigated using energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The effect of sulfurization time and the thickness of top and bottom Cu layer in precursors on the properties of CZTS thin films were investigated. The importance of Cu thickness adjacent to Sn to avoid detrimental phases was addressed. The significance of sulfurization time to restrict the Sn and Zn losses, formation of oxides such as fin dioxide and zinc oxide, and formation of molybdenum disulfide and voids between Mo/CZTS interface was also addressed. Moreover, cadmium sulfide buffer layer, which is conventionally used in CZTS solar cells, is replaced by an environmentally friendly alternative zinc oxysulfide buffer layer.Article Citation - WoS: 35Citation - Scopus: 38Influence of Sulfurization Temperature on Cu2znsns4 Absorber Layer on Flexible Titanium Substrates for Thin Film Solar Cells(IOP Publishing Ltd., 2018) Buldu, Dilara Gökçen; Cantaş, Ayten; Türkoğlu, Fulya; Akça, Fatime Gülşah; Meriç, Ece; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Aygün, GülnurIn this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.Article Citation - WoS: 2Citation - Scopus: 3Comparision of in Situ Spectroscopic Ellipsometer and Ex Situ X-Ray Photoelectron Spectroscopy Depth Profiling Analysis of Hfo2/Hf Multilayer Structure(IOP Publishing Ltd., 2018) Cantaş, Ayten; Özyüzer, Lütfi; Aygün, GülnurA HfO2 film was grown by RF magnetron sputtering technique on a Si substrate Using in situ Spectroscopic Ellipsometry (SE), the film thickness and refractive index were examined as a function of deposition time. Ex situ x-ray Photoelectron Spectroscopy (XPS) was used in depth profile mode to determine the phase evolution of HfO2/Hf/Si multilayer structure after the growth process. The chemical composition and the crystal structure of the film were investigated by Fourier Transform Infrared (FTIR) spectroscopic measurements and x-ray Diffraction in Grazing Incidence (GI-XRD) mode, respectively. The results showed that the film was grown in the form of HfO2 film. According to SE analysis, reactive deposition of HfO2 directly on Hf/Si results to SiO2 interface of about 2 nm. The final HfO2 films thickness is 5.4 nm. After a certain period of time, the XPS depth profile revealed that the film was in the form of Hf-rich Hf silicate with SiO2 interfacial layer. In reference to XPS quantification analysis from top to bottom of film, the atomic concentration of Hf element reduces from 19.35% to 7.13%, whereas Si concentration increases from 22.99% to 74.89%. The phase change of HfO2 film with time is discussed in details.Article Citation - WoS: 42Citation - Scopus: 46Importance of Cds Buffer Layer Thickness on Cu2znsns4-Based Solar Cell Efficiency(IOP Publishing Ltd., 2018) Cantaş, Ayten; Türkoğlu, Fulya; Meriç, Ece; Akça, Fatime Gülşah; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Özyüzer, Gülnur AygünCu2ZnSnS4 (CZTS) thin films were grown on Mo-coated soda lime glass (SLG) substrates by the sulfurization of DC magnetron-sputtered Zn, Sn and Cu metallic precursors under a sulfur atmosphere at 550 °C for 45 min. Understanding the composition and structure of the CZTS absorber layer is necessary to obtain efficient solar cells. With this aim, x-ray diffractometry, Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy and x-ray photoelectron spectroscopy were used to investigate the CZTS absorber layers. CZTS absorber films were obtained and found to be Cu-poor and Zn-rich in composition, which are both qualities desired for efficient solar cells. CdS was used as a buffer layer and was grown by the chemical bath deposition technique. The optical properties of CdS films on SLG were searched for using a spectroscopic ellipsometer and the results revealed that the bandgap increases with film thickness increment. CZTS-based solar cells with different CdS buffer layer thicknesses were prepared using a SLG/Mo/CZTS/CdS/ZnO/AZO solar cell configuration. The influence of the CdS buffer layer thickness on the performance of the CZTS solar cells was investigated. Device analysis showed that electrical characteristics of solar cells strongly depend on the buffer layer's thickness. Highly pronounced changes in V OC, fill factor and J SC parameters, which are the main efficiency limiting factors, with changing buffer layer thicknesses were observed. Our experiments confirmed that decreasing the CdS thickness improved the efficiency of CZTS solar cells down to the lowest thickness limit.Article Citation - WoS: 10Citation - Scopus: 10In-Situ Spectroscopic Ellipsometry and Structural Study of Hfo2 Thin Films Deposited by Radio Frequency Magnetron Sputtering(American Institute of Physics, 2014) Cantaş, Ayten; Özyüzer, Gülnur Aygün; Basa, Deepak KumarWe have investigated the reduction of unwanted interfacial SiO2 layer at HfO2/Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO2 thin films for possible direct contact between HfO2 thin film and Si substrate, necessary for the future generation devices based on high-κ HfO2 gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO2 thin films and also to undertake the in-situ characterization of the high-κ HfO2 thin films deposited on n-type 〈100〉 crystalline silicon substrate. The formation of the unwanted interfacial SiO2 layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO2 thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-κ HfO2 thin films are crystalline although they were deposited at room temperature.Article Citation - WoS: 42Citation - Scopus: 44Growth of Cu2znsns4 Absorber Layer on Flexible Metallic Substrates for Thin Film Solar Cell Applications(Elsevier Ltd., 2015) Yazıcı, Şebnem; Olgar, Mehmet Ali; Akça, Fatime Gülşah; Cantaş, Ayten; Kurt, Metin; Aygün, Gülnur; Tarhan, Enver; Yanmaz, Ekrem; Özyüzer, LütfiIn this work, Cu2ZnSnS4 (CZTS) absorber layers were fabricated using a two-stage process. Sequentially deposited Cu-Zn-Sn thin film layers on metallic foils were annealed in an Ar + S2(g) atmosphere. We aimed to investigate the role of flexible titanium and molybdenum foil substrates in the growth mechanism of CZTS thin films. The Raman spectra and X-ray photoelectron spectroscopy analyses of the sulfurized thin films revealed that, except for the presence of Sn-based secondary phases, nearly pure CZTS thin films were obtained. Additionally, the intense and sharp X-ray diffraction peak from the (112) plane provided evidence of good crystallinity. Electron dispersive spectroscopy analysis indicated sufficient sulfur content but poor Zn atomic weight percentage in the films. Absorption and band-gap energy analyses were carried out to confirm the suitability of CZTS thin films as the absorber layer in solar cell applications. Hall effect measurements showed the p-type semiconductor behavior of the CZTS samples. Moreover, the back contact behavior of these metallic flexible substrates was investigated and compared. We detected formation of cracks in the CZTS layer on the molybdenum foils, which indicates the incompatibility of molybdenum's thermal expansion coefficient with the CZTS structure. We demonstrated the application of the magnetron sputtering technique for the fabrication of CZTS thin films on titanium foils having lightweight, flexible properties and suitable for roll-to-roll manufacturing for high throughput fabrication. Titanium foils are also cost competitive compared to molybdenum foils. © 2015 Elsevier B.V.Article Citation - WoS: 18Citation - Scopus: 20Impact of Incorporated Oxygen Quantity on Optical, Structural and Dielectric Properties of Reactive Magnetron Sputter Grown High-? Hfo2/Hf Thin Film(Elsevier Ltd., 2014) Cantaş, Ayten; Aygün, Gülnur; Turan, RaşitHigh-κ hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and high-κ film, prior to HfO2 deposition, a thin Hf buffer layer was deposited on p-type (1 0 0) Si substrate at room temperature. Effect of oxygen gas quantity in the O2/Ar gas mixture was studied for the optical and structural properties of grown HfO2 high-κ thin films. The grown thin oxide films were characterized optically using spectroscopic ellipsometer (SE) in detail. Crystal structure was studied by grazing incidence X-ray diffractometer (GIXRD) technique, while bonding structure was obtained by Fourier transform infrared spectroscopy (FTIR) analyses. In agreement with GIXRD and FTIR analyses, SE results show that any increment above ideal quantity of oxygen content in the gas mixture resulted in decrements in the refractive index and thickness of HfO2 dielectric film, while increments in SiO2 thickness. It is apparent from experimental results that oxygen to argon gas ratio needs to be smaller than 0.2 for a good film quality. The superior structural and optical properties for grown oxide film were obtained for O2/Ar gas ratio of about 0.05-0.1 combined with ∼30 W constant rf sputtering power. © 2014 Elsevier B.V. All rights reserved.Conference Object Citation - WoS: 33Citation - Scopus: 35Effects of Physical Growth Conditions on the Structural and Optical Properties of Sputtered Grown Thin Hfo2 Films(Elsevier Ltd., 2011) Aygün, Gülnur; Cantaş, Ayten; Şimşek, Yılmaz; Turan, RaşitHfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O 2/Ar gas ratio during sputtering, and substrate temperature. XRD spectra show that the deposited films have (111) monoclinic phase of HfO 2, which is also supported by FTIR spectra. XPS depth profiling spectra shows that highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind. © 2010 Elsevier B.V. All rights reserved.