Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Conference Object Investigation of In-Gap Field Enhancement at Terahertz Frequencies for a Metasurface Enhanced Sensor(Institute of Electrical and Electronics Engineers, 2021) Tugay, Halime; Altan, Hakan; Demirhan, Yasemin; Özyüzer, Lütfi; Sabah, CumaliThe arrangements of subwavelength inclusions in a metasurface can serve as an effective absorber for the terahertz region. When such an absorber is combined with a unique material, the absorption can induce effects that can lead to a change in the materials electrical properties. Vanadium dioxide shows a passive and reversible change from monoclinic insulator phase to metallic tetragonal rutile structure by using external stimuli such as temperature (340K), photo excitation, electric field, mechanical strain or magnetic field [1,2]. Upon absorption of the THz radiation, the high electric fields that are generated inside the gaps of the metasurface can serve as trigger points, as was shown previously using kV strength THz E-fields.Book Part Citation - Scopus: 1Thz Sources and Detectors Fabricated From High Temperature Superconductors(Springer, 2021) Demirhan, Yasemin; Türkoğlu, Fulya; Altan, Hakan; Sabah, Cumali; Özyüzer, LütfiHigh temperature superconductors have unique properties that can be useful in the THz region, single crystal constituted from superconducting CuO2-layers could sustain high voltages across the junctions and they are coupled through the intrinsic Josephson Effect this maintains the potential for very intense, coherent radiation which spreads over the THz gap. We investigated various experimental techniques to fabricate THz sources, bolometers and filters for efficient THz emission and detection. Rectangular mesa structures were fabricated on Bi2Sr2CaCu2O8-x (Bi2212) single crystal superconductors using standard e-beam lithography and Ar ion beam etching systems and an emitted power as high as 60 ?W at frequencies up to 0.85 THz was detected from micron sized continuous wave terahertz sources. We also fabricated bolometric microchips for THz detection purpose from Bi2212 single crystals. Bi2212 microchips detected the signals and response time were calculated, our results have clearly shown that Bi2212 single crystals are potential candidates for THz detection. The detection properties and sensitivity of bolometer chips can be further improved by integrating an antenna and filter structures. In order to investigate this we have fabricated metamaterial THz filters based on metals and YBa2Cu3Ox superconducting thin films with metal-mesh shape and a unique fourcross shape pattern. Both a THz time domain spectrometer and a Fourier transform infrared spectrometer (FTIR) were used to investigate the performance of these filters and the results were compared with simulations done with a commercially available electromagnetic simulation software. © Springer Nature B.V. 2021.Conference Object Reactive Ion Beam Etching of Superconducting Bi2212 by Ta/Pr and Pr'/ta/pr Masks for the Generation of Thz Waves(Institute of Electrical and Electronics Engineers Inc., 2009) Köseoğlu, Hasan; Türkoğlu, Fulya; Demirhan, Yasemin; Meriç Polster, Zeynep; Özyüzer, LütfiGeneration of powerful THz radiation from intrinsic Josephson Junctions (Ills) of Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi2212) may require mesas with large lateral dimension. However, there are difficulties in fabrication of perfect rectangular mesas. Mesa lateral angles should be close to 90 degrees to obtain IJJs with same planar dimensions for synchronization of IJJs. Since thick photoresist (PR) layer shades the lateral dimension of mesa during ion beam etching, we patterned Ta/PR and PR'/Ta/PR masks on Bi2212 and used selective ion etching to overcome this problem. The reactive ion beam etchings have done with ion beam of Ar, N(2) and O(2) and we have obtained mesas about 1 mu m with lateral angle of approximately 50 to 75 degrees which is better than the mesas fabricated with single layer mask.Conference Object Terahertz Transmission Through Patterened Vanadium Oxide Thin Films on Dielectric Substrates(SCITEPRESS, 2017) Akkaya, M.; Demirhan, Yasemin; Yüce, Hürriyet; Aygün, Gülnur; Özyüzer, Lütfi; Sabah, Cumali; Altan, HakanPatterned and unpatterned films of vanadium oxide grown on dielectric substrates such as fused silica and sapphire were grown and analysed by varying the temperature using terahertz time domain spectroscopy. After investigating the critical transition temperature near 340K, a well-known cross-shaped pattern was studied to observe any resonances upon transmission. Due to the poor conductivity of the films the frequency selective nature of the structure was not observed, however an etalon effect could be seen in the sapphire substrate as opposed to the fused silica substrate above the critical temperature. Dependence of the refractive index difference between substrates upon transmission of the THz pulse is likely in explaining this observed difference.Conference Object Citation - Scopus: 1Cleo®/Europe - Eqec 2015, an Indium Tin Oxide Metamaterial Filter for the Terahertz Regime: Design, Fabrication and Characterization(Optical Society of America (OSA), 2015) Takan, Taylan; Nebioğlu, Mehmet Ali; Kurt, Metin; Demirhan, Yasemin; Özyüzer, Lütfi; Sabah, Cumali; Altan, Hakan[No abstract available]Article Fabrication of Bi2212 Single Crystal Bolometer for Detection of Terahertz Waves(Springer Verlag, 2017) Semerci, Tuğçe; Demirhan, Yasemin; Miyakawa, Nobuaki; Wang, Huabing; Özyüzer, LütfiTerahertz (THz) radiation is in powerful region of electromagnetic spectrum because of prosperous application areas yet deficiency still exists about sources and detectors in despite of improvements of the research field in this range. This gap can be filled by focusing on development of THz detectors. Therefore, bolometers were preferred through many detectors due to detection sensitivity above 1 THz. In this study, Bi2Sr2CaCu2O8+δ (Bi2212) single crystals were used to fabricate THz bolometric detector. Bi2212 single crystals were transferred on sapphire substrate by cleavage process and e-beam lithography and ion beam etching were used to fabricate the microchip clean room facilities. Customdesigned cryogenic cryostat was used for a-b axis electrical and THz response measurements with liquid nitrogen cooled system. After electrical measurements, Bi2212 microchips detected the signals using Stefan-Boltzmann Lamp and response time were calculated. This study have shown with our experimental results that Bi2212 single crystals are potential candidates for THz bolometric detectors.Conference Object Fabrication of Double Mesa Structures by E-Beam Lithography From High Temperature Superconducting Bi2sr2cacu2o 8+? (bi2212) for Powerful Terahertz Emission(Institute of Electrical and Electronics Engineers Inc., 2011) Demirhan, Yasemin; Türkoğlu, Fulya; Köseoğlu, Hasan; Minematsu, M.; Araki, H.; Miyakawa, Nobuaki; Özyüzer, LütfiWe work on a frequency tunable solid state device to meet the needs of continuous, coherent, powerful terahertz emission sources that fill practically important terahertz gap. High temperature superconducting (HTS) coherently oscillating Josephson junctions in Bi2Sr2CaCu 2O8+δ (Bi2212) crystal make this approach very promising. Since doping dependence of Bi2212 is an important parameter, Bi2212 crystals are annealed in vacuum or purified argon gas flow at 425°C. For further processing we pattern both single and double rectangular mesa structures by using electron beam lithography on the cleaved surface of the crystal. Resistance-temperature (R-T), and current-voltage behavior (I-V) measurements achieved. © 2011 IEEE.Conference Object Terahertz Wave Emission From Layered Superconductors: Interferometer Measurements(Institute of Electrical and Electronics Engineers Inc., 2011) Özyüzer, Lütfi; Türkoğlu, Fulya; Demirhan, Yasemin; Köseoğlu, Hasan; Preu, S.; Ploss, D.; Malzer, S.; Şimşek, Yılmaz; Wang, Huabing; Müller, P.Rectangular Bi2Sr2CaCu2O 8+δ (Bi2212) mesa structures were fabricated on as-grown Bi2212 single crystal superconductors using standard photolithography and Ar ion beam etching techniques. We have performed c-axis resistance versus temperature (R-T), current-voltage (I-V) characteristics and bolometer measurements. Furthermore, in contrast to previous studies, the emission frequency was determined using interferometer set up instead of FTIR. The interference patterns were detected outside the cryostat after traveling long way through ambient space. The emission frequency calculated by Fourier transform of interference data is consistent with Josephson frequency-voltage relation. © 2011 IEEE.