Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 4Citation - Scopus: 4Atomic Collapse in Graphene Quantum Dots in a Magnetic Field(Elsevier, 2022) Eren, İsmail; Güçlü, Alev DevrimWe investigate finite size and external magnetic field effects on the atomic collapse due to a Coulomb impurity placed at the center of a hexagonal graphene quantum dot within tight binding and mean-field Hubbard approaches. For large quantum dots, the atomic collapse effect persists when the magnetic field is present, characterized by a series of Landau level crossings and anticrossings, in agreement with previous bulk graphene results. However, we show that a new regime arises if the size of the quantum dot is comparable to or smaller than the magnetic length: While the lowest bound states cross the Fermi level at a lower value of coupling constant β<0.5, a size independent critical coupling constant βc∗>0.5 emerges in the local density of states spectrum, which increases with the applied magnetic field. These effects are found to be persistent in the presence of electron–electron interactions within mean-field Hubbard approximation.Article Citation - WoS: 15Citation - Scopus: 15Vertical van der waals heterostructure of single layer InSe and SiGe(American Chemical Society, 2019) Eren, İsmail; Özen, Sercan; Sözen, Yiğit; Yağmurcukardeş, Mehmet; Şahin, HasanWe present a first-principles investigation on the stability, electronic structure, and mechanical response of ultrathin heterostructures composed of single layers of InSe and SiGe. First, by performing total energy optimization and phonon calculations, we show that single layers of InSe and SiGe can form dynamically stable heterostructures in 12 different stacking types. Valence and conduction band edges of the heterobilayers form a type-I heterojunction having a tiny band gap ranging between 0.09 and 0.48 eV. Calculations on elastic-stiffness tensor reveal that two mechanically soft single layers form a heterostructure which is stiffer than the constituent layers because of relatively strong interlayer interaction. Moreover, phonon analysis shows that the bilayer heterostructure has highly Raman active modes at 205.3 and 43.7 cm(-1), stemming from the out-of-plane interlayer mode and layer breathing mode, respectively. Our results show that, as a stable type-I heterojunction, ultrathin heterobilayer of InSe/SiGe holds promise for nanoscale device applications.