Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 2Citation - Scopus: 2The Icrn Value in Intrinsic Josephson Tunnel Junctions in Bi2sr2cacu2o8+? (bi2212) Mesas(Springer Verlag, 2011) Kurter, Cihan; Özyüzer, Lütfi; Hinks, David G.; Gray, Kenneth E.; Zasadzinski, John F.The c-axis current-voltage I(V) characteristics have been obtained on a set of mesas of varying height sculpted on Bi2Sr2CaCu2O8+δ (Bi2212) crystals intercalated with HgB2. The intercalation, along with the small number of junctions in the mesa, N = 6–30, minimizes the degree of self-heating, leading to a consistent Josephson critical current, IC, among junctions in the mesa. The Bi2212 crystals with a bulk TC =74 K are overdoped and display negligible pseudogap effects allowing an accurate measure of the normal state resistance, RN. These properties make themesas nearlyideal for the determinationof the Josephson ICRN product.Wefind ICRN valuesconsistently ∼30% of the quasiparticle gap parameter, /e, which was measured independently using a mechanical contact, break junction technique. The latter was necessitated by higher bias heating effects in the mesas which prevented direct measurements of the superconducting gap. These values are among the highest reported and may represent the maximum intrinsic value for ICRN. The results indicate that the c-axis transport is a mixture of coherent and incoherent tunneling.Article Citation - WoS: 40Citation - Scopus: 45Terahertz Wave Emission From Intrinsic Josephson Junctions in High- Tc Superconductors(IOP Publishing Ltd., 2009) Özyüzer, Lütfi; Şimşek, Yılmaz; Köseoğlu, Hasan; Türkoğlu, Fulya; Kurter, Cihan; Welp, U.; Koshelev, A. E.; Gray, Kenneth E.; Kwok, W. K.; Yamamoto, T.; Kadowaki, K.; Koval, Yu I.; Wang, Huabing; Müller, Paul H.Recently, we experimentally demonstrated that rectangular mesa structures of intrinsic Josephson junctions (IJJ) in Bi2Sr2CaCu 2O8+d (Bi2212) can be used as a compact solid-state generator of continuous, coherent and polarized terahertz (THz) radiation. In the present work, we will exhibit tall mesas (over 600 junctions) which were fabricated using UV lithography, e-beam lithography with photoresist and e-beam lithography with a Ti selective etching technique. We will present measurements of the c-axis resistance as a function of temperature and of current-voltage characteristics of THz emitting mesas with lateral sizes ranging from 30 × 300 to 100 × 300νm2. Furthermore, we will discuss the dependence of the characteristics of the mesa structures on the oxygen doping level of the Bi2212 crystals. We will also experimentally show that the voltage-frequency relation of the ac Josephson effect has to match the cavity resonance for successful emission.