Physics / Fizik
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Research Project Yüksek sıcaklık üstüniletkenlerindeki özgün Josephson eklemlerinin tünelleme karakteristiği(TÜBİTAK - Türkiye Bilimsel ve Teknolojik Araştırma Kurumu, 2004) Özyüzer, Lütfi; Kurter, Cihan; Eğilmez, Mehmet; Günel, AylinYüksek sıcaklık üstüniletkenlerinin, üstüniletkenlik mekanizmasının anlaşılması için çok büyük emek harcanmaktadır. Deneysel tekniklerde biri olan tünelleme spektroskopisi (üstüniletken-yalıtkan-normal metal (SIN) ve üstüniletken-yalıtkan-üstüniletken (SIS)), elektronların çiftlenme mekanizması hakkında önemli bilgiler verir. Yüksek sıcaklık üstüniletkenlerinin büyük anisotropisi ve aşırı kısa koherens uzunluğu sebebiyle hala tekrarlanabilir düzlemsel tünel eklemler üretilememiştir. Kristal yapılarının kompleks olmasına karşın, bütün yüksek sıcaklık üstüniletkenleri bazı katmanları Cu ve O dan oluşan kare örgülerden oluşur. Üstüniletkenlik bu CuO2 düzlemlerdeki kuvvetli etkileşen elektronlardan kaynaklanırken birim hücredeki diğer katmanlar pasif boşluk doldurucular veya yük depoları gibi davranır. Bu mükemmel katmanlı yapı kullanılarak, Bi2Sr2CaCu2O8+d tek kristalleri veya c-exseni boyunca büyütülmüş incefilmleri kullanılarak mesa yapılar üretilebilir ve bunlar özgün Josephson eklemleri olarak isimlendirilir. Bu çalışmada, fotolitografi ve Argon iyon demeti milling yöntemi ile 10x10 mıkrometre ve 20x20 mıkrometre boyutlarında Bi2Sr2CaCu2O8+d tek kristalleri üzewrine özgün Josephson eklemleri hazırlanmıştır. Elde edilen eklemlerin, geniş bir sıcaklık aralığında (4.2-300 K) akım-gerilim ve tünelleme iletkenliği ölçülmüştür. Bir SIN eklemin tünelleme iletkenliği durum yoğunluğu ile orantılı olduğundan, SISISI… eklemleri seriside de bu durum yoğunluklarının birleştirilmesinden oluşur. Özgün Josephson eklemlerinin tünelleme iletkenliğide sonuçta, incelenen üstüniletkenin durum yoğunluğunun spektral özelliklerini (örneğin keskin sankiparçacık (quasiparticle) pikleri ve “dip” ve “hump”) göstermesi gerekir. Bu özellikler optimum doping yapılmış Bi2Sr2CaCu2O8+d örnekler için incelenmiş ve yasak enerji aralığının ve Josephson akımının dopinge bağımlılığı bulunarak SIN ve SIS ile elde edilenlerle karşılaştırılmıştır. Özgün Josephson eklemleri ve SIS lerin karşılaştırılması sonucunda tamamen farklı karakteristiklere sahip oldukları görülmüştür. Bu özelliklerin özgün Josephson eklemlerinde ısınma ve sankiparcacık enjekte edilmesi ile açıklanmıştırArticle Citation - WoS: 2Citation - Scopus: 3Reply To "comment on 'counterintuitive Consequence of Heating in Strongly-Driven Intrinsic Junctions of Bi2sr2cacu 2o8+? Mesas'"(American Physical Society, 2011) Kurter, Cihan; Özyüzer, Lütfi; Proslier, Thomas; Zasadzinski, John F.; Hinks, David G.; Gray, Kenneth E.The main criticism raised in the preceding Comment concerns our suggestion that sharp conduction peaks in Bi 2Sr 2CaCu 2O 8+δ mesas, along with absent dip-hump features, may, in general, be a result of self-heating. The author points to the variety of experimental configurations, matrix-element effects, and doping dependencies that might allow a diversity of conductance spectra. We argue that numerous mesa studies (with fixed matrix elements) firmly establish the systematic development of sharp conductance peaks with increased self-heating, and thus, the issue of nonuniversality of tunneling characteristics is not relevant. The author mentions a number of studies that show that the mesa is superconducting near the conductance peak voltage. This is not in dispute and indicates a misinterpretation of our analysis that is clarified here. To address further comments on the technical details of our heating model, we reiterate that our conclusions are independent of our model but rather are based solely on experimental data that are not in dispute.Article Citation - WoS: 2Citation - Scopus: 2The Icrn Value in Intrinsic Josephson Tunnel Junctions in Bi2sr2cacu2o8+? (bi2212) Mesas(Springer Verlag, 2011) Kurter, Cihan; Özyüzer, Lütfi; Hinks, David G.; Gray, Kenneth E.; Zasadzinski, John F.The c-axis current-voltage I(V) characteristics have been obtained on a set of mesas of varying height sculpted on Bi2Sr2CaCu2O8+δ (Bi2212) crystals intercalated with HgB2. The intercalation, along with the small number of junctions in the mesa, N = 6–30, minimizes the degree of self-heating, leading to a consistent Josephson critical current, IC, among junctions in the mesa. The Bi2212 crystals with a bulk TC =74 K are overdoped and display negligible pseudogap effects allowing an accurate measure of the normal state resistance, RN. These properties make themesas nearlyideal for the determinationof the Josephson ICRN product.Wefind ICRN valuesconsistently ∼30% of the quasiparticle gap parameter, /e, which was measured independently using a mechanical contact, break junction technique. The latter was necessitated by higher bias heating effects in the mesas which prevented direct measurements of the superconducting gap. These values are among the highest reported and may represent the maximum intrinsic value for ICRN. The results indicate that the c-axis transport is a mixture of coherent and incoherent tunneling.Article Citation - WoS: 42Citation - Scopus: 43Counterintuitive Consequence of Heating in Strongly-Driven Intrinsic Junctions of Bi2 Sr2 Cacu2 O 8+? Mesas(American Physical Society, 2010) Kurter, Cihan; Özyüzer, Lütfi; Proslier, T.; Zasadzinski, John F.; Hinks, David G.; Gray, Kenneth E.Anomalously high and sharp peaks in the conductance of intrinsic Josephson junctions in Bi2 Sr2 CaCu2 O 8+δ (Bi2212) mesas have been commonly interpreted as superconducting energy gaps but here we show they are a result of strong self-heating. This conclusion follows directly from a comparison to the equilibrium gap measured by tunneling in single break junctions on equivalent crystals. As the number of junctions in the mesa, N, and thus heating increase, the peak voltages decrease and the peak width abruptly sharpens for N≥12. Clearly these widely variable features vs N cannot all represent the equilibrium properties. Our data imply that the sharp peaks represent a transition to the normal state. That it occurs at the same dissipated power for N=12-30 strongly implicates heating as the cause. Although peak sharpening due to heating is counterintuitive, as tunneling spectra usually broaden at higher temperatures, a lateral temperature gradient, leading to coexistence of normal hot spots and superconductive regions, qualitatively explains the behavior. However, a more uniform temperature profile cannot be ruled out. As the peak's width and voltage in our shortest mesa (N=6) are more consistent with the break junction data, we propose a figure of merit for Bi2212 mesas, the relative conductance peak width, such that small values signal a crossover into the strong self-heating regime. © 2010 The American Physical Society.Conference Object Citation - WoS: 36Citation - Scopus: 40Thermal Management in Large Bi2212 Mesas Used for Terahertz Sources(Institute of Electrical and Electronics Engineers Inc., 2009) Kurter, Cihan; Gray, Kenneth E.; Zasadzinski, John F.; Özyüzer, Lütfi; Koshelev, A. E.; Li, Q.; Yamamoto, T.; Kadowaki, K.; Kwok, W. K.; Tachiki, M.; Welp, U.We present a thermal analysis of a patterned mesa on a Bi 2Sr2CaCu2O8 (Bi2212) single crystal that is based on tunneling characteristics of the c-axis stack of ∼800 intrinsic Josephson junctions in the mesa. Despite the large mesa volume (e.g., 40 × 300 × 1.2 μm3) and power dissipation that result in self-heating and backbending of the current-voltage curve (I-V), there are accessible bias conditions for which significant polarized THz-wave emission can be observed. We estimate the mesa temperature by equating the quasiparticle resistance, Rqp(T), to the ratio V/I over the entire I-V including the backbending region. These temperatures are used to predict the unpolarized black-body radiation reaching our bolometer and there is substantial agreement over the entire I-V. As such, backbending results from the particular R qp (T) for Bi2212, as first discussed by Fenton, rather than a significant suppression of the energy gap. This model also correctly predicts the observed disappearance of backbending above ∼60 K.Article Citation - WoS: 150Citation - Scopus: 146Direct Observation of Tetrahertz Electromagnetic Waves Emitted From Intrinsic Josephson Junctions in Single Crystalline Bi2sr2cacu2o8+?(Elsevier Ltd., 2008) Kadowaki, K.; Yamaguchi, H.; Kawamata, K.; Yamamoto, T.; Minami, H.; Kakeya, I.; Welp, U.; Özyüzer, Lütfi; Koshelev, A. E.; Kurter, Cihan; Gray, Kenneth E.; Kwok, W. K.We have observed intense, coherent, continuous and monochromatic electromagnetic (EM) emission at terahertz frequencies generated from a single crystalline mesa structure of the high-Tc superconductor Bi2Sr2CaCu2O8+δ intrinsic Josephson junction system. The mesa is fabricated by the Argon-ion-milling and photolithography techniques on the cleaved surface of Bi2Sr2CaCu2O8+δ single crystal. The frequency, ν, of the EM radiation observed from the sample obeys simple relations: ν = c/nλ = c/2nw and ν = 2eV/hN, where c is the light velocity in vacuum, n the refractive index of a superconductor, λ the wave length of the EM emission in vacuum, w the shorter width of the mesa, V the voltage applied to the mesa, N the number of layers of intrinsic Josephson junctions, e and h are the elementary charge and the Planck constant, respectively. These two relations strongly imply that the mechanism of the emission is, firstly, due to the geometrical resonance of EM waves to the mesa like a cavity resonance occuring in the mesa structure, and forming standing waves as cavity resonance modes, and secondly, due to the ac-Josephson effect, which works coherently in all intrinsic Josephson junctions. The peculiar temperature dependence of the power intensity emitted form samples shows a broad maximum in a temperature region between 20 and 40 K, suggesting that the nonequilibrium effect plays an essential role for the emission of EM waves in this system. The estimated total power is significantly improved in comparison with the previous report [L. Ozyuzer et al., Science 318 (2007) 1291, K. Kadowaki, et al., Physica C 437-438 (2006) 111, I.E. Batov, et al., Appl. Phys. Lett. 88 (2006) 262504], and reached as high as 5 μW from single mesa with w = 60 μm at 648 GHz, which enables us to use it for some of applications. So far, we succeeded in fabricating the mesa emitting EM waves up to 960 GHz in the fundamental mode in the w = 40 μm mesa, whereas the higher harmonics up to the 4-th order were observed, resulting in a frequency exceeding 2.5 THz. In sharp contrast to the previous reports [K. Kadowaki, et al., Physica C 437-438 (2006) 111, M.-H. Bae, et al., Phys. Rev. Lett. 98, (2007) 027002], all the present measurements were done in zero magnetic field. Lastly, a plausible theoretical model for the mechanism of emission is discussed.Article Citation - WoS: 40Citation - Scopus: 45Terahertz Wave Emission From Intrinsic Josephson Junctions in High- Tc Superconductors(IOP Publishing Ltd., 2009) Özyüzer, Lütfi; Şimşek, Yılmaz; Köseoğlu, Hasan; Türkoğlu, Fulya; Kurter, Cihan; Welp, U.; Koshelev, A. E.; Gray, Kenneth E.; Kwok, W. K.; Yamamoto, T.; Kadowaki, K.; Koval, Yu I.; Wang, Huabing; Müller, Paul H.Recently, we experimentally demonstrated that rectangular mesa structures of intrinsic Josephson junctions (IJJ) in Bi2Sr2CaCu 2O8+d (Bi2212) can be used as a compact solid-state generator of continuous, coherent and polarized terahertz (THz) radiation. In the present work, we will exhibit tall mesas (over 600 junctions) which were fabricated using UV lithography, e-beam lithography with photoresist and e-beam lithography with a Ti selective etching technique. We will present measurements of the c-axis resistance as a function of temperature and of current-voltage characteristics of THz emitting mesas with lateral sizes ranging from 30 × 300 to 100 × 300νm2. Furthermore, we will discuss the dependence of the characteristics of the mesa structures on the oxygen doping level of the Bi2212 crystals. We will also experimentally show that the voltage-frequency relation of the ac Josephson effect has to match the cavity resonance for successful emission.Article Citation - WoS: 13Citation - Scopus: 12Modeling Study of the Dip-Hump Feature in Bi2 Sr2 Cacu2 O8+? Tunneling Spectroscopy(American Physical Society, 2006) Romano, Pierom; Özyüzer, Lütfi; Yusof, Zikri; Kurter, Cihan; Zasadzinski, John F.The tunneling spectra of high-temperature superconductors on Bi2 Sr2 CaCu2 O8+δ (Bi-2212) reproducibly show a high-bias structure in the form of a dip-hump at voltages higher than the gap voltage. Of central concern is whether this feature originates from the normal state background or is intrinsic to the superconducting mechanism. We address this issue by generating a set of model conductance curves-a "normal state" conductance that takes into account effects such as the band structure and a possible pseudogap, and a pure superconducting state conductance. When combined, the result shows that the dip-hump feature present in the experimental conductance curves cannot be naively attributed to a normal state effect. In particular, strong dip features found in superconductor-insulator-superconductor data on optimally doped Bi-2212, including negative dI dV, cannot be a consequence of an extrinsic pseudogap. However, such features can easily arise from state-conserving deviations in the superconducting density of states, e.g., from strong-coupling effects.Conference Object Citation - WoS: 1Citation - Scopus: 1Self-Heating Effect in Intrinsic Tunneling Spectroscopy of Hgbr2 Intercalated Bi2.1sr1.4ca1.5cu 2o8+? Single Crystals(IEEE, 2007) Kurter, Cihan; Özyüzer, Lütfi; Zasadzinski, John F.; Hinks, David G.; Gray, Kenneth E.We report tunneling results in intrinsic Josephson junction (IJJ) stacks fabricated in the form of square micromesas on HgBr2 intercalated Bi2.1Sr1.4Ca1.5Cu2O 8+δ (Bi2212) single crystals using photolithography and Ar ion milling techniques. Self-heating is the most common problem encountered in interlayer tunneling and it is likely to reduce the reliability of IJJ data. Although intercalation reduces heating a hundredfold, it still needs to be minimized substantially in order to approach the authentic superconducting energy gap observed by tunneling using more conventional junctions. We report tunneling characteristics of two mesas with the same height but different sizes (5 × 5 μm2 and 10 × 10 μm2) to show that heating effects are strongly related to IJJ stack size. For the smaller mesa, we observed an energy gap close to that seen in single SIN (S: superconductor, I: insulator, N: normal metal) and SIS break junctions as well as the dip and hump structures at high bias. The subgap data of 5 × 5 μm2 mesa were successfully fit with a momentum averaged d-wave model using convenient parameters. Thus our data is consistent with the predominant pairing symmetry suggested by point contact tunneling, break junction, scanning tunneling microscopy/spectroscopy and angle resolved photoemission measurements in Bi2Sr2CaCu2O8+δ.Conference Object Citation - WoS: 2Citation - Scopus: 2Spin Polarized Current Injection Through Hgbr2 Intercalated Bi2212 Intrinsic Josephson Junctions(Institute of Electrical and Electronics Engineers Inc., 2007) Özyüzer, Lütfi; Kurter, Cihan; Özdemir, Mustafa; Zasadzinski, John F.; Gray, Kenneth E.; Hinks, David G.To investigate the effect of polarized current on tunneling characteristics of intrinsic Josephson junctions (IJJs), spin-polarized and spin-degenerate current have been injected through the c-axis of HgBr2 intercalated Bi2.1Sr1.5Ca1.4Cu2O 8+δ (Bi2212) single crystals on which 10 × 10 μm 2 mesas have been fabricated. These two spin conditions are achieved by depositing either Au (15 nm)/Co (80 nm)/Au (156 nm) multilayers or single Au film on HgBr2 intercalated Bi2212 with Tc = 74 K followed by photolithography and Ar ion beam etching. The I-V characteristics have been measured with and without a magnetic field parallel to c-axis at 4.2 K. A fine, soft Au wire is used to make a gentle mechanical contact on the top of a particular mesa in the array. Tunneling conductance characteristics were obtained and the magnetic field dependence of sumgap voltage peaks was investigated. These peaks do not change in position with increasing magnetic field for both contact configurations. In addition, the temperature dependence of tunneling characteristics of the IJJs are obtained and existence of pseudogap feature is observed above Tc for HgBr2 intercalated Bi2212.