Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Research Project Üstüniletken MgB2 tellerin üretimi ve karakterizasyonu(TÜBİTAK - Türkiye Bilimsel ve Teknolojik Araştırma Kurumu, 2005) Okur, Salih; Özyüzer, Lütfi; Abukay, Doğan; Emirdağ, Mehtap; Tanoğlu, Metin; Eğilmez, MehmetMgB2 alaşımının 39 K lik Tc kritik sıcaklığına sahip bir üstüniletken olduğunun 2001 de keşfedilmesi çok iyi üstüniletken olduğu bilinen NbTi ve NbsSn malzemelerinin yanısıra uygulamaya daha yakın yeni bir üstüniletken malzeme olma ümidini de artırmıştır. O günden bu güne MgB2 üstüniletken tellerin üretilmesi konusunda çok etkileyici bir aşama kaydedilmiştir. Daha yüksek kritik akım yoğunluğuna ulaşmak için gerekli parametrelerin araştırılması konusunda birkaç teknik geliştirilmiştir. Bunların arasında 'tüp içinde toz ' (TIT) adı verilen metot diğerlerine göre daha pratik ve ümit verici gözükmektedir. Bazı metal ve alaşımların TIT işleminde kılıf malzeme olarak kullanılmaya uygun bulunmuştur. Bunlardan demir ve alaşımları kısmen MgB2 özelliğini bozmadığı gibi manyetik ekranlama yaparak dış manyetik alanların kritik akım üzerindeki yan etkilerini azaltarak daha yüksek değerlere ulaşılmıştır. TIT yöntemi ile MgB2 üretimi sırasında iki farklı teknik vardır. Birisinde reaktif MgB2 tozlar kulanılırken diğerinde belli kimyasal oranlarda karıştırılmış reaktif olmayan Mg+2B tozları kullanılmaktadır. Daha sonra bu tozlar reaksiyon yapmayan bir tüp veya kapsül içine kapatılıp 900 ile 1000 °C civarında belirli bir süre tavlanmaktadır. Bu yöntem ile Demir kılıflı MgB2 üstüniletken tellerinden 15 K de 10 A/cm civarında bir Jc kritik akım yoğunluğuna ulaşılmıştır. Bu projede ilk adım olarak borik asitten M&B2 elde edilmiş ve elde edilen MgB2 in yapısını XRD ve SEM EDX mikroskopu ile karakterize edilmiştir. Uygun bir saflığa sahip MgB2 e ulaşıldığında elektriksel ve manyetik özellikleri pellet haline getirilip incelenmiştir, ikinci adımda ise üretilen MgB2 tozlarından üstüniletken MgB2 tel ve teyplerin TIT yöntemi ile üretilmiştir ve Cu, Fe, ve paslanmaz çelik gibi MgB2 ile etkileşmeyen malzemeler kılıf olarak kullanılanarak üretilmeye çalışılmış ve bu üstüniletken MgB2 tellerin özdirenç ve manyetik alana bağlı olarak kritik akım (Jc) karakteristiğinin sıcaklığa bağımlılığı incelenmiştir.Research Project Üstüniletken magnezyum borür (MgB2) tellerinin yüksek akım ve yüksek manyetik alan uygulamaları için geliştirilmesi(2008) Okur, Salih; Tarhan, Enver; Büyükköse, Serkan; Özyüzer, Lütfi; Tanoğlu, Metin; Emirdağ, Mehtap[No Abstract Available]Research Project Nanokompozit malzemelerin polimer ve tabakalı kil yapılardan geliştirilmesi ve karakterizasyonu(2009) Tanoğlu, Metin; Okur, Salih[No Abstract Available]Research Project Süperiletkenlerdeki Josephson girdap akısının terahertz ışıması(2008) Özyüzer, Lütfi; Okur, Salih; Tarı, Süleyman; Şimşek, Yılmaz; Ulucan, Savaş; Özdemir, Mehtap; Köseoğlu, Hasan[No Abstract Available]Conference Object Citation - WoS: 7Citation - Scopus: 7Carbon Deposition on the Stainless Steels Substrates Using Pulsed Plasma(National Institute of Optoelectronics, 2008) Pat, Suat; Balbağ, Zafer; Cenik, I.; Ekem, Naci; Okur, Salih; Vladoiu, Rodica; Musa, GeavitWe have developed a generic method for carbon deposition method for any substrates from methane pulsed plasma. The generic method has been developed for carbon deposition on the stainless steels substrates using pulsed methane plasma. Pulsed plasma was produced at atmospheric pressure methane gas and room temperatures. Methane plasma was generated using with 25kV, 25kHz pulsed power supply. Discharge current approximately 300 mA. Stainless steels probes hold in the 32mm from the methane plasma. Probes dimensions were phi=30mm, h=8mm and 4 mm.Article Citation - WoS: 2Citation - Scopus: 2Scanning Probe Oxidation Lithography on Ta Thin Films(American Scientific Publishers, 2008) Okur, Salih; Büyükköse, Serkan; Tarı, SüleymanA Semi-Contact Scanning Probe Lithography Technique (SC-SPL) has been applied to create nano-oxide patterns on Ta thin films grown by DC magnetron sputtering method on SiO 2/Si substrates. The height and linewidth profiles of nano-oxide lines created by a conductive AFM tip on Ta film surfaces were measured as a function of applied voltage, oxidation time, humidity, and tip apex curvature. The AFM surface measurements show that the height of the oxides increases linearly with increasing voltage; but there was no oxide growth, when less than 4 V was applied even at 85% relative humidity. Electrical measurements were performed and the resistivities of the TaO x layer and Ta film were obtained as 5.76 × 10 8 and 1.4 × 10 5 Ohm-cm, respectively.Article Citation - WoS: 17Citation - Scopus: 18Analysis of Interface States of the Pentacene Organic Thin-Film Phototransistor by Conductance Technique(Elsevier Ltd., 2009) Okur, Salih; Yakuphanoğlu, FahrettinA pentacene thin-film transistor with a channel width of 300 μm and a channel length of 30 μm has been successfully fabricated on n-Si substrate with thermally oxidized SiO2 as a gate insulator. The photovoltaic and interface state density properties of the transistor have been investigated. A pentacene film of 200 nm thickness was deposited on the SiO2 layer with a vacuum thermal evaporator. Atomic force microscopy images of the pentacene film on SiO2 insulating layer show a homogeneous film surface with the rms roughness of 11 nm. The transistor shows p-channel characteristics, as a result of positive carriers generated in the pentacene film for the negative bias voltages applied to the gate. The photosensitivity (Iph/Idark) is measured as 1.45 at an illumination intensity of 3500 lux at the off state. This suggests that the pentacene thin-film transistor shows a phototransistor characteristic. The field-effect mobility of the pentacene OTFT was found to be 0.021 cm2/(V s). The interface state density of the transistor was determined using conductance technique and was found to be about 1.191 × 1010 eV-1 cm-2.Article Citation - WoS: 31Citation - Scopus: 40Structural and Magnetic Characterization of Plasma Ion Nitrided Layer on 316l Stainless Steel Alloy(Elsevier Ltd., 2009) Öztürk, Orhan; Okur, Salih; Riviere, Jean PaulIn this study, an FeCrNi alloy (316L stainless steel disc) was nitrided in a low-pressure R.F. plasma at 430 °C for 72 min under a gas mixture of 60% N2-40% H2. Structural, compositional and magnetic properties of the plasma nitrided layer was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and magnetic force microscopy (MFM). The magnetic behaviour of the nitrided layer was also investigated with a vibrating sample magnetometer (VSM). Combined X-ray diffraction, cross-sectional SEM, AFM and MFM, as well as VSM analyses provide strong evidence for the formation of the γN phase, [γN-(Fe, Cr, Ni)], with mainly ferromagnetic characteristics. The uniform nature of the γN layer is clearly demonstrated by the XRD, cross-sectional SEM and AFM analyses. Based on the AFM and SEM data, the thickness of the γN layer is found to be ∼6 μm. According to the MFM and VSM analyses, ferromagnetism in the γN layer is revealed by the observation of stripe domain structures and the hysteresis loops. The cross-sectional MFM results demonstrate the ferromagnetic γN phase distributed across the plasma nitrided layer. The MFM images show variation in the size and form of the magnetic domains from one grain to another.Article Citation - WoS: 15Citation - Scopus: 17Influence of Crystallographic Orientation on Hydration of Mgo Single Crystals(Elsevier Ltd., 2009) Sütçü, Mücahit; Akkurt, Sedat; Okur, SalihThis study has been performed in order to find out the influence of crystallographic orientation on hydration of MgO single crystal substrates with (1 0 0)-, (1 1 0)-, and (1 1 1)-orientations. The samples were left in a hydration chamber with an 88% relative humidity for 18 h at room temperature. The effect of humidity on the samples was examined by scanning probe microscope (SPM) and scanning electron microscope (SEM) which showed that the degree of hydration was noticeably influenced by the crystallographic orientation. It was found that the MgO with (1 1 1)-orientation has the highest tendency to hydrate than the other orientations. Second most affected sample was (1 1 0) crystal. Loss of MgO on the surface by hydration is most severe when the crystal is oriented in (1 1 1) plane with the maximum hydrate layer thickness of 174 nm after 18 h of exposure.Article Citation - WoS: 12Citation - Scopus: 15Local Oxidation Nanolithography on Hf Thin Films Using Atomic Force Microscopy (afm)(IOP Publishing Ltd., 2009) Büyükköse, Serkan; Okur, Salih; Özyüzer, Gülnur AygünWell controlled Hf oxide patterns have been grown on a flat Hf thin film surface produced by the dc magnetron sputtering method on Si and SiOx substrates. These patterns have been created by using the technique of semi-contact scanning probe lithography (SC-SPL). The thickness and width of the oxide patterns have been measured as a function of applied voltage, duration and relative humidity. There is a threshold voltage even at 87% humidity, due to insufficient energy required to start the oxide growth process for a measurable oxide protrusion. Electrical characterization was also performed via the I-V curves of Hf and HfOx structures, and the resistivity of HfO x was found to be 4.284 × 109 Ω cm. In addition to the I-V curves, electric force microscopy and spreading surface resistance images of Hf and HfOx were obtained.