Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 3Citation - Scopus: 3Atomic Collapse in Disordered Graphene Quantum Dots(American Physical Society, 2020) Polat, Mustafa; Güçlü, Alev DevrimIn this paper, we numerically study a Coulomb impurity problem for interacting Dirac fermions restricted in disordered graphene quantum dots. In the presence of randomly distributed lattice defects and spatial potential fluctuations, the response of the critical coupling constant for atomic collapse is mainly investigated by local density of states calculations within the extended mean-field Hubbard model. We find that both types of disorder cause an amplification of the critical threshold. As a result, up to a 34% increase in the critical coupling constant is reported. This numerical result may explain why the Coulomb impurities remain subcritical in experiments, even if they are supercritical in theory. Our results also point to the possibility that atomic collapse can be observed in defect-rich samples such as Ar+ ion bombarded, He+ ion irradiated, and hydrogenated graphene.Article Citation - WoS: 12Citation - Scopus: 13Electronic and Magnetic Properties of Graphene Quantum Dots With Two Charged Vacancies(Elsevier, 2020) Kul, Erdoğan Bulut; Polat, Mustafa; Güçlü, Alev DevrimElectronic and magnetic properties of a system of two charged vacancies in hexagonal shaped graphene quantum dots are investigated using a mean-field Hubbard model as a function of the Coulomb potential strength ? of the charge impurities and the distance R between them. For ?=0, the magnetic properties of the vacancies are dictated by Lieb's rules where the opposite (same) sublattice vacancies are coupled antiferromagnetically (ferromagnetically) and exhibit Fermi oscillations. Here, we demonstrate the emergence of a non-magnetic regime within the subcritical region: as the Coulomb potential strength is increased to ??0.1, before reaching the frustrated atomic collapse regime, the magnetization is strongly suppressed and the ground state total spin projection is given by Sz=0 both for opposite and same sublattice vacancy configurations. When long-range electron–electron interactions are included within extended mean-field Hubbard model, the critical value for the frustrated collapse increases from ?cf?0.28 to ?cf?0.36 for R<27Å. © 2020 Elsevier LtdArticle Citation - WoS: 5Citation - Scopus: 5Collapse of the Vacuum in Hexagonal Graphene Quantum Dots: a Comparative Study Between Tight-Binding and Mean-Field Hubbard Models(American Physical Society, 2020) Polat, Mustafa; Sevinçli, Haldun; Güçlü, Alev DevrimIn this paper, we perform a systematic study on the electronic, magnetic, and transport properties of the hexagonal graphene quantum dots (GQDs) with armchair edges in the presence of a charged impurity using two different configurations: (1) a central Coulomb potential and (2) a positively charged carbon vacancy. The tight-binding and the half-filled extended Hubbard models are numerically solved and compared with each other in order to reveal the effect of electron interactions and system sizes. Numerical results point out that off-site Coulomb repulsion leads to an increase in the critical coupling constant to beta(c) = 0.6 for a central Coulomb potential. This critical value of beta is found to be independent of the GQD size, reflecting its universality even in the presence of electron-electron interactions. In addition, a sudden downshift in the transmission peaks shows a clear signature of the transition from subcritical beta < beta(c) to the supercritical beta > beta(c) regime. On the other hand, for a positively charged vacancy, collapse of the lowest bound state occurs at beta(c) = 0.7 for the interacting case. Interestingly, the local magnetic moment, induced by a bare carbon vacancy, is totally quenched when the vacancy is subcritically charged, whereas the valley splittings in electron and hole channels continue to exist in both regimes.Article Citation - WoS: 4Citation - Scopus: 5Identifying Threading Dislocations in Cdte Films by Reciprocal Space Mapping and Defect Decoration Etching(American Institute of Physics, 2018) Polat, Mustafa; Bilgilisoy, Elif; Arı, Ozan; Öztürk, Orhan; Selamet, YusufWe study threading dislocation (TD) density of high-quality cadmium telluride (CdTe) layers grown on a (211) oriented GaAs substrate by molecular beam epitaxy. High-resolution X-ray diffraction was performed to calculate the density of screw-type TDs by measuring the broadening of the asymmetrical (511) Bragg reflections of CdTe epilayers. In addition, total TD densities were determined by the Everson-etching method and were compared with screw TDs. Our results show that the total TD densities in CdTe films were dominated by those with screw character. The screw component TDs are estimated to account for more than 90% of the total TD density. CdTe layers grown at a thickness of less than 3.0 μm typically exhibit the screw TD densities in the 106 cm-2 and 107 cm-2 range. It can be noted that as the nucleation temperature increases, i.e., ≥222 °C, both the area density of TDs with the screw component of the CdTe films and the total TD density are roughly four times larger than those of the epilayer grown at the nucleation temperature of 215 °C. Furthermore, we discuss the influence of the II/VI flux ratio on the density of threading dislocations. The contribution of screw TDs to the total TD density showed a significant decrease in roughly 30% in the case of a high II/VI flux ratio. We further examine the reciprocal space maps in the vicinity of the (422) reflections.Article Citation - WoS: 13Citation - Scopus: 16Reciprocal Space Mapping Study of Cdte Epilayer Grown by Molecular Beam Epitaxy on (2 1 1)b Gaas Substrate(IOP Publishing Ltd., 2017) Polat, Mustafa; Arı, Ozan; Öztürk, Orhan; Selamet, YusufWe examine high quality, single crystal CdTe epilayer grown by molecular beam epitaxy (MBE) on (2 1 1)B GaAs substrate using both positions and full width at half maximums (FWHMs) of reciprocal lattice points (RLPs). Our results demonstrate that reciprocal space mapping (RSM) is an effective way to study the structural characteristics of the high-index oriented epitaxial thin films having a large lattice mismatch with the substrate. The measurement method is defined first, and then the influence of shear strain ( xz) on the position of the (5 1 1) node of epilayer is clarified. It is concluded that the lattice tilting is likely to be related with the lattice mismatch. Nondestructive measurement of the dislocation density is achieved by applying the mosaic crystal model. The screw dislocation density, estimated to be 7.56×107 cm2, was calculated utilizing the broadened peakwidths of the asymmetric RLP of the epilayer lattice.Article Citation - WoS: 3Citation - Scopus: 3Growth and Characterization of Cdte Absorbers on Gaas by Mbe for High Concentration Pv Solar Cells(John Wiley and Sons Inc., 2015) Arı, Ozan; Polat, Mustafa; Karakaya, Merve; Selamet, YusufCdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X-ray diffraction rocking curves (XRD RC) as low as 227 arc-seconds with 0.5% thickness uniformity that a 2 μm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∼5 x 105cm-1 in solar radiation spectrum.