Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 35Citation - Scopus: 38Influence of Sulfurization Temperature on Cu2znsns4 Absorber Layer on Flexible Titanium Substrates for Thin Film Solar Cells(IOP Publishing Ltd., 2018) Buldu, Dilara Gökçen; Cantaş, Ayten; Türkoğlu, Fulya; Akça, Fatime Gülşah; Meriç, Ece; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Aygün, GülnurIn this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.Article Citation - WoS: 42Citation - Scopus: 46Importance of Cds Buffer Layer Thickness on Cu2znsns4-Based Solar Cell Efficiency(IOP Publishing Ltd., 2018) Cantaş, Ayten; Türkoğlu, Fulya; Meriç, Ece; Akça, Fatime Gülşah; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Özyüzer, Gülnur AygünCu2ZnSnS4 (CZTS) thin films were grown on Mo-coated soda lime glass (SLG) substrates by the sulfurization of DC magnetron-sputtered Zn, Sn and Cu metallic precursors under a sulfur atmosphere at 550 °C for 45 min. Understanding the composition and structure of the CZTS absorber layer is necessary to obtain efficient solar cells. With this aim, x-ray diffractometry, Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy and x-ray photoelectron spectroscopy were used to investigate the CZTS absorber layers. CZTS absorber films were obtained and found to be Cu-poor and Zn-rich in composition, which are both qualities desired for efficient solar cells. CdS was used as a buffer layer and was grown by the chemical bath deposition technique. The optical properties of CdS films on SLG were searched for using a spectroscopic ellipsometer and the results revealed that the bandgap increases with film thickness increment. CZTS-based solar cells with different CdS buffer layer thicknesses were prepared using a SLG/Mo/CZTS/CdS/ZnO/AZO solar cell configuration. The influence of the CdS buffer layer thickness on the performance of the CZTS solar cells was investigated. Device analysis showed that electrical characteristics of solar cells strongly depend on the buffer layer's thickness. Highly pronounced changes in V OC, fill factor and J SC parameters, which are the main efficiency limiting factors, with changing buffer layer thicknesses were observed. Our experiments confirmed that decreasing the CdS thickness improved the efficiency of CZTS solar cells down to the lowest thickness limit.Article Citation - WoS: 39Citation - Scopus: 40Interferometer Measurements of Terahertz Waves From Bi 2sr 2cacu 2o 8+d Mesas(IOP Publishing Ltd., 2012) Türkoğlu, Fulya; Köseoğlu, Hasan; Demirhan, Yasemin; Özyüzer, Lütfi; Preu, Sascha; Malzer, Stefan; Şimşek, Yusuf; Müller, P.; Yamamoto, T.; Kadowaki, K.We fabricated rectangular mesa structures of superconducting Bi 2Sr 2CaCu 2O 8+d (Bi2212) using e-beam lithography and Ar ion beam etching techniques for terahertz (THz) emission. c-axis resistance versus temperature (R-T), current-voltage (I-V) characteristics and bolometric THz power measurements were performed to characterize Bi2212 mesas. The emission frequency of mesas was determined using a Michelson interferometer setup which also demonstrates polarized emission. Interference patterns of THz radiation from Bi2212 mesas were detected by various detectors such as a liquid helium cooled silicon composite bolometer, a Golay cell and a pyroelectric detector. An emitted power as high as 0.06mW was detected from Bi2212 mesas. For the first time, most of the pumped power was extracted as THz emission from a Bi2212 mesa. The radiation at 0.54THz was detected using the Michelson interferometric setup.Article Citation - WoS: 40Citation - Scopus: 45Terahertz Wave Emission From Intrinsic Josephson Junctions in High- Tc Superconductors(IOP Publishing Ltd., 2009) Özyüzer, Lütfi; Şimşek, Yılmaz; Köseoğlu, Hasan; Türkoğlu, Fulya; Kurter, Cihan; Welp, U.; Koshelev, A. E.; Gray, Kenneth E.; Kwok, W. K.; Yamamoto, T.; Kadowaki, K.; Koval, Yu I.; Wang, Huabing; Müller, Paul H.Recently, we experimentally demonstrated that rectangular mesa structures of intrinsic Josephson junctions (IJJ) in Bi2Sr2CaCu 2O8+d (Bi2212) can be used as a compact solid-state generator of continuous, coherent and polarized terahertz (THz) radiation. In the present work, we will exhibit tall mesas (over 600 junctions) which were fabricated using UV lithography, e-beam lithography with photoresist and e-beam lithography with a Ti selective etching technique. We will present measurements of the c-axis resistance as a function of temperature and of current-voltage characteristics of THz emitting mesas with lateral sizes ranging from 30 × 300 to 100 × 300νm2. Furthermore, we will discuss the dependence of the characteristics of the mesa structures on the oxygen doping level of the Bi2212 crystals. We will also experimentally show that the voltage-frequency relation of the ac Josephson effect has to match the cavity resonance for successful emission.