Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 20Citation - Scopus: 20Area Dependence and Influence of Crystal Inhomogeneity on Superconducting Properties of Bi2212 Mesa Structures(Elsevier Ltd., 2015) Demirhan, Yasemin; Sağlam, Hilal; Türkoğlu, Fulya; Alaboz, Hakan; Özyüzer, Lütfi; Miyakawa, Nobuaki; Kadowaki, K.The rapid increase in applications of terahertz waves requires new techniques to obtain continuous wave terahertz sources. Mesa structures fabricated from high-Tc superconductor Bi2Sr2CaCu2O8+δ (Bi2212) single crystal have been observed as an intense, coherent, continuous electromagnetic wave source in the terahertz (THz) frequency region. However, in order to produce coherent radiation with high applicable power, we need large mesa structures that enter a collective electromagnetic state in which their oscillations are largely synchronized in phase. On the other hand, large mesa structures cause a heating problem. In this study, we report on the critical current density dependence of mesa area and the crystal inhomogeneity to understand heating problems in large area mesas for terahertz radiation. Since the doping dependence of Bi2212 is an important parameter, the as-grown Bi2212 crystals were heat-treated at various temperatures under vacuum conditions. We have fabricated triple mesa structures from Bi2212 single crystal using e-beam lithography and argon ion beam etching techniques with same area and with different area on the same chip. We investigated and compared characteristics of triple mesas which are on the same chip and next to each other. In this way, we searched the crystal inhomogeneity in triple mesa structures and studied the critical current density dependence of mesa area to obtain high emission power for the THz radiation. Our experimental results clearly show that the Josephson critical current density is decreasing when the area of mesa is increasing. © 2015 Elsevier Ltd. All rights reserved.Article Citation - WoS: 12Citation - Scopus: 13Emission of the Thz Waves From Large Area Mesas of Superconducting Bi 2sr2cacu2o8+? by the Injection of Spin Polarized Current(Elsevier Ltd., 2013) Türkoğlu, Fulya; Özyüzer, Lütfi; Köseoğlu, Hasan; Demirhan, Yasemin; Preu, S.; Malzer, S.; Şimşek, Yılmaz; Wang, Huabing; Muller, P.Rectangular Au/Co/Au/Bi2Sr2CaCu2O 8+δ (Bi2212) mesa structures with large areas and high thicknesses were fabricated on as-grown Bi2212 single crystals in order to obtain small critical current from as-grown mesas by the injection of spin polarized current and so eliminate the adjustment of doping level for successful THz emission. We have performed c-axis resistance versus temperature (R-T), current-voltage (I-V) characteristics and bolometer measurements. It is the first time that THz emission has been observed from as-grown mesas due to injection of spin polarized current. © 2013 Elsevier Ltd. All rights reserved.Article Citation - WoS: 24Citation - Scopus: 26The Fabrication of Thz Emitting Mesas by Reactive Ion-Beam Etching of Superconducting Bi2212 With Multilayer Masks(Springer Verlag, 2011) Köseoğlu, Hasan; Türkoğlu, Fulya; Şimşek, Yılmaz; Özyüzer, LütfiGeneration of powerful THz radiation from intrinsic Josephson Junctions (IJJs) of Bi2Sr2CaCu2O8+δ (Bi2212) may require mesas with large lateral dimensions. However, there are difficulties in fabrication of perfect rectangular mesas. The lateral angles of mesas should be close to 90 degrees to obtain IJJs with same planar dimensions for synchronization of IJJs. We patterned Ta/photoresist and photoresist/Ta/photoresist masks on Bi2212 and used selectiveionetchingtoovercomethethickphotoresistlayershading on the lateral dimension of mesa during the ion-beam etching. The reactive ion-beam etchings have been done with ion beams of Ar, N2 and O2, and we have obtained mesas about 1 µm with lateral angle of approximately 50 to 75°, which is better than the mesas fabricated with photoresist mask.