Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 2Citation - Scopus: 2Scanning Probe Oxidation Lithography on Ta Thin Films(American Scientific Publishers, 2008) Okur, Salih; Büyükköse, Serkan; Okur, Salih; Tarı, Süleyman; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyA Semi-Contact Scanning Probe Lithography Technique (SC-SPL) has been applied to create nano-oxide patterns on Ta thin films grown by DC magnetron sputtering method on SiO 2/Si substrates. The height and linewidth profiles of nano-oxide lines created by a conductive AFM tip on Ta film surfaces were measured as a function of applied voltage, oxidation time, humidity, and tip apex curvature. The AFM surface measurements show that the height of the oxides increases linearly with increasing voltage; but there was no oxide growth, when less than 4 V was applied even at 85% relative humidity. Electrical measurements were performed and the resistivities of the TaO x layer and Ta film were obtained as 5.76 × 10 8 and 1.4 × 10 5 Ohm-cm, respectively.Article Citation - WoS: 35Citation - Scopus: 37Modification of Ito Surface Using Aromatic Small Molecules With Carboxylic Acid Groups for Oled Applications(Elsevier Ltd., 2011) Havare, Ali Kemal; Tarı, Süleyman; Demiç, Şerafettin; Okur, Salih; Kuş, Mahmut; Okur, Salih; Yağmurcukardeş, Nesli; Tarı, Süleyman; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology4-[(3-Methylphenyl)(phenyl)amino]benzoic acid (MPPBA) was synthesized in order to facilitate the hole-injection in Organic Light Emitting Diodes (OLED). MPPBA was applied to form self-assembled monolayer (SAM) on indium tin oxide (ITO) anode to align energy-level at the interface between organic semiconductor material (TPD) and inorganic anode (ITO) in OLED devices. The modified surface was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM). KPFM was used to measure the surface potential and work function between the tip and the ITO surface modified by SAM technique using MPPBA. The OLED devices (ITO/MPPBA/TPD/Alq3/Al) fabricated with SAM-modified ITO substrates showed lower turn-on voltages and enhanced diode current compare to the OLED devices fabricated with bare ITO substrates.Article Citation - WoS: 26Citation - Scopus: 24Effect of Ta Buffer Layer and Thickness on the Structural and Magnetic Properties of Co Thin Films(AVS Science and Technology Society, 2009) Vahaplar, Kadir; Tarı, Süleyman; Tarı, Süleyman; Okur, Salih; Okur, Salih; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologySingle Co and Ta/Co bilayers were grown on Si(100) substrates in a magnetron sputtering system. The effect of Ta buffer layer and the thickness of Co layer on the structural and magnetic properties of the Co layers has been studied. A single Co layer shows a textured structure above thickness of 40 nm according to the x-ray diffraction (XRD) pattern. The magnetic properties of Co layers depend significantly on the thickness of the films. Ta grows as highly textured Β -Ta (tetragonal) phase on Si with a smooth surface. The XRD and atomic force microscopy results show that the Ta buffer layer improves the structural properties dramatically, resulting in a strongly textured and smoother surface morphology. The Ta layer also affects the magnetic properties of Co layers to a large extent, especially inducing an in-plane anisotropy in thin Co films.