Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Author: search.filters.author.Tarhan, EnverScopus Q: search.filters.scopusQuartile.Q3

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  • Article
    Citation - WoS: 35
    Citation - Scopus: 38
    Influence of Sulfurization Temperature on Cu2znsns4 Absorber Layer on Flexible Titanium Substrates for Thin Film Solar Cells
    (IOP Publishing Ltd., 2018) Buldu, Dilara Gökçen; Cantaş, Ayten; Türkoğlu, Fulya; Akça, Fatime Gülşah; Meriç, Ece; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Aygün, Gülnur
    In this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.
  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    The Effect of Thickness of Silver Thin Film on Structural and Optical Properties of Porous Silicon
    (World Scientific Publishing Co. Pte Ltd, 2017) Çetinel, A.; Özdoğan, M.; Utlu, G.; Artunç, N.; Şahin, G.; Tarhan, Enver
    In this study, porous silicon (PS) samples were prepared on n-type silicon (100) wafers by electrochemical etching method, varying the current density from 20 to 100mA/cm2 and keeping constant HF concentration (10%) and etching time of 15min. Then, Ag thin films, which have 10, 50 and 100nm film thicknesses, were deposited on PS layers by using thermal evaporation to investigate the influence of Ag film thickness on structural and optical properties of PS. The structural and optical properties of PS and Ag deposited PS layers have been investigated by XRD, FE-SEM, Raman and photoluminescence (PL) spectroscopy. FE-SEM XRD and Raman analyzes indicate that average pore size and porosity of PS layers increase with the increasing current density. Further, Ag nanoparticles have embedded in pore channel. PL measurement reveals that higher porosity of PS would be better to form the Ag-PS nano-composite material leading to stronger PL band. The PL spectra of PS and Ag-PS samples indicate that PL bands show blue shift with increasing current density and film thickness. Consequently, it has been found that the structural and optical properties of PS depend on current density and Ag film thickness individually.