Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Author: search.filters.author.Tarhan, EnverWoS Q: search.filters.wosQuartile.Q4

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  • Article
    Citation - WoS: 6
    Citation - Scopus: 6
    The Growth of Silver Nanostructures on Porous Silicon for Enhanced Photoluminescence: The Role of Agno3 Concentration and Deposition Time
    (EDP Sciences, 2019) Çetinel, Alper; Artunç, Nurcan; Tarhan, Enver
    Silver nanostructures were obtained by using the electrodeposition method on n-type porous silicon (PSi) under different deposition times and concentrations of AgNO3 solutions. The analyses of the structural and photoluminescence properties of PSi/Ag were studied by SEM, XRD and photoluminescence spectroscopy. SEM analysis showed that the shape and size of Ag nanostructures significantly depend on the deposition time and concentration. It was found that spherical nanoparticles and thin Ag dendrites were obtained in short deposition times at 1 and 5 mM AgNO3 concentrations, whereas, Ag complex dendrite nanostructures formed in long deposition times. It was also found that only micro-sized Ag particles were formed at 10 mM. XRD results revealed that the degree of crystallization increases with increasing concentration. Photoluminescence analysis showed that the deposition time and concentration of AgNO3 remarkably affect the PL intensity of PSi/Ag samples. We determined a PL enhancement of similar to 2.7 for the PSi/Ag deposited at 120 s for 1 mM AgNO3. The improved PL intensity of PSi/Ag nanostructures can be explained by the combination of quantum confinement and surface states. PL analyses also indicated that with increasing deposition time and AgNO3 concentrations, the PL intensity of PSi/Ag structures significantly decreases due to the auto-extinction phenomenon.
  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    The Effect of Thickness of Silver Thin Film on Structural and Optical Properties of Porous Silicon
    (World Scientific Publishing Co. Pte Ltd, 2017) Çetinel, A.; Özdoğan, M.; Utlu, G.; Artunç, N.; Şahin, G.; Tarhan, Enver
    In this study, porous silicon (PS) samples were prepared on n-type silicon (100) wafers by electrochemical etching method, varying the current density from 20 to 100mA/cm2 and keeping constant HF concentration (10%) and etching time of 15min. Then, Ag thin films, which have 10, 50 and 100nm film thicknesses, were deposited on PS layers by using thermal evaporation to investigate the influence of Ag film thickness on structural and optical properties of PS. The structural and optical properties of PS and Ag deposited PS layers have been investigated by XRD, FE-SEM, Raman and photoluminescence (PL) spectroscopy. FE-SEM XRD and Raman analyzes indicate that average pore size and porosity of PS layers increase with the increasing current density. Further, Ag nanoparticles have embedded in pore channel. PL measurement reveals that higher porosity of PS would be better to form the Ag-PS nano-composite material leading to stronger PL band. The PL spectra of PS and Ag-PS samples indicate that PL bands show blue shift with increasing current density and film thickness. Consequently, it has been found that the structural and optical properties of PS depend on current density and Ag film thickness individually.