Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Research Project Üstüniletken magnezyum borür (MgB2) tellerinin yüksek akım ve yüksek manyetik alan uygulamaları için geliştirilmesi(2008) Okur, Salih; Tarhan, Enver; Büyükköse, Serkan; Özyüzer, Lütfi; Tanoğlu, Metin; Emirdağ, Mehtap[No Abstract Available]Research Project Yüksek Kalite İnce Kataliz Filmler Üzerine Kimyasal Buhar Biriktirme Yöntemleri ile Kontrollü Grafen Büyütülmesi, Karakterizasyonu ve Uygulamaları(2016) Selamet, Yusuf; Öztürk, Orhan; Tarhan, EnverGrafen hem çok hafif hem de çelikten kat kat sağlam bir malzemedir. Aynı zamanda görünür bölgede geçirgendir ve metalik özellik gösterir. Grafen değişik şekillerde kesildiğinde bir bant aralığı oluşur ve bunlardan üstün özellikli devre elemanları üretilebilir. Grafen’de elektronik alanında Si’un yerini alacak potansiyel görülmektedir. Bunlarla tek atom kalınlığında elektronik, nano-boyutlu aygıtlar yapılabilir ve normal yarıiletkenlerin boyutlarının daha da küçülmesini sınırlayan kuantum tünelleme olayından etkilenmezler. Grafen kuantum ve rölativistik fizik ile ilgili birçok deneyleri, milyarlarca dolar harcanarak oluşturulan hızlandırıcılara gerek kalmadan basit laboratuvar ortamında yapma olanağı sunar. Grafen’in içerdiği benzersiz fizik tamamen yeni cihazların tasarımlanmasına yol açabilecek yeniliktedir.Research Project Metal-yalıtkan Geçiş Özellikli Vo2 ile Gate Oksitli ve Gate Oksitsiz Alan Etkili Aygıt(2017) Aygün, Gülnur; Tarhan, EnverVanadyum dioksit (VO2) yaklaşık olarak 68 °C'de metal-yalıtkan geçiş özelliği göstermektedir. VO2 düşük sıcaklıklarda yalıtkan fazda bulunurken, geçiş sıcaklığına göre yüksek sıcaklıklarda metalik fazda bulunur. Geçiş sıcaklığında, VO2'nin özdirenci ani bir şekilde 10^4 oranında değişim gösterir ve bu özelliğinden dolayı hızlı elektronik cihazlarda kullanılma potansiyeli oldukça yüksektir. VO2 alan etkili transistör uygulamalarında önemli bir rol oynamaktadır. VO2 gösterdiği elektriksel özellikler sebebiyle alan etkili transistörlerde kanal görevi görmektedir. VO2 malzemesinin elektrik alan altında değişen elektriksel özellikleri, VO2'yi alan etkili transistörlerde kanal malzemesi olarak kullanılmasını mümkün kılmaktadır. Bu özellikler göz önünde bulundurulduğunda VO2 kanal görevi görecek şekilde iki farklı tipte FET üretilmiştir. Birinci tip FET üretiminde, VO2'ye temas etmeksizin, arada hava bırakılarak VO2'nin altına ve üstüne, iki adet altın gate tabakası buharlaştırılmıştır. Altın gate tabakalarının VO2'ye hiçbir şekilde fiziksel teması olmadığından, VO2 içerisine malzeme difüz etmesi de söz konusu değildir. Bu ise VO2'nin MIT özelliğini etkilemeden, e-demeti litografi tekniği sayesinde çok detaylı hatlara sahip olan FET üretebilmemizi sağlamıştır. İkinci tip FET üretiminde ise VO2'nin üretilip e-demeti ile şekillendirilmesi aşamasına kadarki yapılacak işlemler birinci tip FET üretimi ile aynıdır. HfO2 ince filmi gate dielektrik olarak kullanılmıştır. VO2 kanalları üzerine, DC saçtırma yöntemi ile HfO2 gate dielektrik büyütülmüştür. HfO2 gate dielektrik tabakası üzerine Au/Al gate tabakası buharlaştırılmıştır. Devamında ise, iki farklı tipte üretilen FET yapılarındaki (tip 1 ve tip 2) VO2 kanal tabakasının, prob istasyonu kullanılarak vakum ortamında sıcaklığa bağlı olarak, voltaj altında MIT karakterizasyonları yapılmıştır.Article Citation - WoS: 2Citation - Scopus: 2Room Temperature Emission From Single Defects in Wo3 Enhanced by Plasmonic Nanocrystals(American Institute of Physics, 2021) Özçeri, Elif; Polat, Nahit; Balcı, Sinan; Tarhan, EnverRoom temperature light emission from optically active defect centers in two-dimensional layered materials has attracted great interest in recent years owing to the critical applications in the field of quantum information technologies. Therefore, efficient generation, detection, characterization, and manipulation of spatially localized emission from the defect centers are of crucial importance. Here, we report localized, stable, and bright room temperature photoluminescence (PL) emission from defects in WO3. In particular, the experimentally observed polarized and power dependent PL emission shows single photon characteristics. In addition, density functional theory calculations indicate that the source of the emission is most probably oxygen vacancy defects in WO3. The PL emission obtained from the localized defect centers in WO3 at room temperature has been, further, enhanced more than 20 times by using plasmonic gold nanoparticles.Article Citation - WoS: 3Citation - Scopus: 3Local Vibrational Modes of Natural Isotopes of Substitutional Oxygen in Cdte(TÜBİTAK - Türkiye Bilimsel ve Teknolojik Araştırma Kurumu, 2020) Tarhan, Enver; Ramdas, Anant K.We investigated the localized vibrational modes (LVM) of natural oxygen containing ${}^{16}O,\;{}^{17}O$ and ${}^{18}O$ isotopes at a substitutional tellurium site in cadmium telluride using infrared absorption spectroscopy at cryogenic temperatures. The main absorption peak observed at 350 cm ?1 was formerly attributed to a fundamental LVM mode (?0) of oxygen at a tellurium site. The relatively weak absorption peaks observed at 331 $cm^{-1}$ and 340 $cm^{-1}$ are assigned as the same $\nu_0$ mode of the ${}^{17}O$ and ${}^{18}O$ isotopes, respectively, based on their relative intensities and spectral positions. The spectral positions were confirmed with theoretical calculations using a linear chain model where the peak position at 350$cm^{-1}$ was taken as the reference for the ${}^{16}O$ isotope. From a least square analysis of the observed peak positions we were able to calculate the force constants from perturbation theory. A Lorentzian line shape analysis of each $\nu_0$ absorption peak, considering the effects of isotopic mass and natural abundance variations of the host Cd atoms, was also carried out to further confirm their assignments. Reasonably good line shape fittings were obtained for $\nu_0$ modes of all isotopes of oxygen.Article Citation - WoS: 5Citation - Scopus: 5Effect of the Synthesis Conditions on the Properties of Co Embedded Porous Si Nanostructures(Elsevier Ltd., 2019) Çetinel, Alper; Artunç, Nurcan; Tarhan, EnverThe electrodeposition of cobalt in the porous silicon (PSi) substrate was investigated in terms of the deposition times and current densities. The PSi/Co samples were characterized by SEM, XRD, Raman, and photoluminescence (PL) spectroscopies. The results indicated that for all current densities, the PL intensities of PSi/Co samples with shorter deposition times (t(s) <= 20 min) increased due to spherical Co nanoparticles (NPs) could be created the new recombination centers, compared to that of the undeposited PSi. On the other hand, the PL intensity of PSi/Co samples significantly decreased at longer deposition times (t(1) > 20 min) because of larger Co NP cluster promoted the formation of non-radiative centers. The increased PL intensities in samples with t(s) were attributed to both the quantum confinement effect and surface effects. PL analyses also suggested that after exposure to air for 60 days, PL characteristics of PSi/Co were stabilized depending on deposition time and current density.Article Citation - WoS: 6Citation - Scopus: 6The Growth of Silver Nanostructures on Porous Silicon for Enhanced Photoluminescence: The Role of Agno3 Concentration and Deposition Time(EDP Sciences, 2019) Çetinel, Alper; Artunç, Nurcan; Tarhan, EnverSilver nanostructures were obtained by using the electrodeposition method on n-type porous silicon (PSi) under different deposition times and concentrations of AgNO3 solutions. The analyses of the structural and photoluminescence properties of PSi/Ag were studied by SEM, XRD and photoluminescence spectroscopy. SEM analysis showed that the shape and size of Ag nanostructures significantly depend on the deposition time and concentration. It was found that spherical nanoparticles and thin Ag dendrites were obtained in short deposition times at 1 and 5 mM AgNO3 concentrations, whereas, Ag complex dendrite nanostructures formed in long deposition times. It was also found that only micro-sized Ag particles were formed at 10 mM. XRD results revealed that the degree of crystallization increases with increasing concentration. Photoluminescence analysis showed that the deposition time and concentration of AgNO3 remarkably affect the PL intensity of PSi/Ag samples. We determined a PL enhancement of similar to 2.7 for the PSi/Ag deposited at 120 s for 1 mM AgNO3. The improved PL intensity of PSi/Ag nanostructures can be explained by the combination of quantum confinement and surface states. PL analyses also indicated that with increasing deposition time and AgNO3 concentrations, the PL intensity of PSi/Ag structures significantly decreases due to the auto-extinction phenomenon.Article Citation - WoS: 9Citation - Scopus: 7Epitaxial Characteristics of Mbe-Grown Znte Thin Films on Gaas (211)b Substrates(Springer, 2019) Özçeri, Elif; Tarhan, EnverHighly crystalline ZnTe thin films were grown on GaAs (211)B substrates by molecular beam epitaxy (MBE) for potential applications such as MCT detectors and optoelectronic devices. We investigated the effects of Te to Zn (VI/II) flux ratio on the quality of ZnTe films in terms of crystal orientation, elemental composition, surface roughness, and dislocation density. Atomic concentrations of Zn, Te, and oxygen complexes due to oxygen contamination on the film surfaces were analyzed by X-ray photoelectron spectroscopy. X-ray double crystal rocking curve full width half maximum (FWHM) of ZnTe (422) peak was observed as 233 arcseconds for a 1.66 mu m thick film, which indicates high crystallinity. Wet chemical etching was applied to the films to quantify the crystal quality by calculating etch pit densities (EPD) from scanning electron microscope images. A very low EPD value of 1.7 x 10(7) cm(-2) was measured. Additionally, the root mean square roughness values, obtained from atomic force microscopy topography images were in the range of 10-25 nm. These values were supported by FWHM values of red green blue color intensity histograms obtained from Nomarski Microscope images. The results of our analyses indicate that the VI/II flux ratios of 4 and 4.5 produce the best quality ZnTe films on GaAs (211)B substrates.Article Citation - WoS: 6Citation - Scopus: 10Effect of Annealing on the Density of Defects in Epitaxial Cdte (211)/Gaas(Springer, 2018) Bakali, Emine; Selamet, Yusuf; Tarhan, EnverCdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied the effect of annealing on the density of dislocation of these CdTe thin films under varying annealing parameters such as annealing temperature, annealing duration, and number of cycles. Annealings were carried out using a homemade annealing reactor possessing a special heater element made of a Si wafer for rapid heating. The density of dislocations, which were made observable with a scanning electron microscope after etching with an Everson solution, were calculated by counting the number of dislocations per unit surface area, hence the term etch pit density (EPD). We were able to decrease EPD values by one order of magnitude after annealing. For example, the best EPD value after a 20-min annealing at 400°C was ∼ 2 × 107 cm−2 for a 1.63-μm CdTe thin film which was about 9.5 × 107 cm−2 before annealing. We also employed Raman scattering measurements to see the changes in the structural quality of the samples. From the Raman measurements, we were able to see improvements in the quality of our samples from the annealing by studying the ratio of 2LO/LO phonon mode Raman intensities. We also observed a clear decrease in the intensity of Te precipitations-related modes, indicating a decrease in the size and number of these precipitations.Article Citation - WoS: 35Citation - Scopus: 38Influence of Sulfurization Temperature on Cu2znsns4 Absorber Layer on Flexible Titanium Substrates for Thin Film Solar Cells(IOP Publishing Ltd., 2018) Buldu, Dilara Gökçen; Cantaş, Ayten; Türkoğlu, Fulya; Akça, Fatime Gülşah; Meriç, Ece; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Aygün, GülnurIn this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.