Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Research Project Üstün dielektrik özelliklere sahip ince HfO2 filmlerin büyütmeye eş zamanlı spektroskopik elipsometrik saçtırma yöntemi ile üretimi ve karakterizasyonu(2010) Aygün Özyüzer, Gülnur; Cantaş, Ayten; Sağlam, Hilal; Turan, Raşit; Selamet, YusufSaçtırma (sputtering) sistemi tekniği kullanılarak, in-situ spektroskopik elipsometre ile kontrollü vakum ortamında, Si pulu üzerine HfO2 filminin kontrollü olarak büyütülmesi gerçekleştirilmiştir. Büyütülen oksit tabakaları çeşitli tanı ve analiz teknikleri (Elipsometre, FTIR, XRD, XPS) ile incelenmiştir. Oksit film büyütme sartları, oksitin HfO2 moduna sahip olması durumu göz önünde bulundurularak çeşitli ölçüm tekniklerinden elde edilen sonuçlara göre incelenmiş ve saçtırma yöntemi ile film büyütme işleminin optimizasyonu yapılmıştır. Spektroskopik elipsometre (SE) aracılığıyla, büyütmeye es zamanlı olarak alınan film kalınlığının, kırılma indisi ve kompleks dielektrik sabitinin gerçel kısmının film büyütme zamanına göre değişimi incelenmiştir. FTIR kullanılarak, büyütülen filmdeki yapıların kimyasal bağları incelenilmiştir. XRD ile yapısal analizler elde edilmiştir. XPS tekniği ile filmin derinlik analizi gerçekleştirilmiştir. Yapısal ve optiksel açıdan en iyi özelliklere sahip örnekler kullanılarak Metal Oksit Yarıiletken (MOS) aygıtlar üretilmiş ve bu aygıtların elektriksel karakterizasyonu elde edilmiştir. ‘Üretim – karakterizasyon – büyüme koşullarının iyileştirilmesi’ döngüsü başarı ile kurulmuş olup şu sonuçlar elde edilmiştir: (a) En uygun oksitleme parametresi olarak kullandığımız en düşük O2/Ar gaz oranı, yani 0.1, ve uygulanan güç açısından 30-40 Watt belirlenmiştir. (b) SiO2 arayüz oluşumu tamamen engellenememiştir ve arayüzde HfSixOy arayüzü elde edilmiştir. (c) Yıgın (bulk) halindeki HfO2 malzemenin 632 nm de sahip olduğu 2.1 değerindeki kırılma indisi değerine oldukça yaklaşılmıştır.Research Project Esnek titanyum folyo alttaş üzerinde Cu2ZnSnS4 ince film güneş hücreleri(2018) Aygün Özyüzer, Gülnur; Özyüzer, Lütfi; Turan, RaşitProjede, esnek titanyum (Ti) folyo alttaş üzerine büyütülen Cu2ZnSnS4 (CZTS) ince filmler üretilerek incelenmiştir. CZTS ince filmler iki aşamalı metot kullanılarak üretilmektedir. İlk aşamada, metalik öncül katmanlar olan Cu/Sn/Zn Ti-folyo alttaş üzerine DC mıknatıssal saçtırma metodu kullanılarak büyütülmektedir. İkinci aşamada ise kaplanmış olan metal öncül katmanların, Ar gazı ortamında belirlenen sıcaklık altında sülfürlenerek CZTS yapısının oluşturulması gerçekleştirilmektedir. Metalik öncül filmler, 530 ile 580 oC arasında değişen sıcaklıklarda sülfürlenerek, sülfürleme sıcaklığının CZTS filmlerinin yapısı üzerindeki etkisi incelenmiştir. Üretilen CZTS filmler, EDX, XRD, SEM, XPS, Spektrofotometri ve Raman Spektroskopisi kullanılarak incelenmiştir. Analiz sonuçlarına göre, Ti folyo alttaş üzerinde yüksek kalitede CZTS ince filmlerin üretilmesinde ideal sülfürleme sıcaklığının 570 oC olduğu sonucuna varılmıştır. Proje kapsamında, Ti arka kontak ile Mo arka kontak etkisinin araştırılması amacıyla, SLG/Mo alttaş üzerine CZTS soğurucu film kullanılarak güneş hücrelerinin üretimi gerçekleştirilmiştir. SLG/Mo/Cu(55nm)/Sn/Zn/Cu(120nm) sıralamasında Tip-1 ve SLG/Mo/Cu(120nm)/Sn/Zn/Cu(55nm) sıralamasında Tip-2 olarak CZT metalik öncüller büyütülmüştür. Aynı istifleme sırası için, Sn katmanı ile ardışık olarak büyütülen Cu katman kalınlığının film kalitesi üzerindeki etkisi araştırılarak, üretilen güneş hücrelerinin ışıkdönüştürme verimlilikleri ile bu etkinin varlığı doğrulanmıştır. CZTS güneş hücrelerinin bir diğer önemli katmanı ise tampon katman olarak Zn(O,S)?dir. Zn(O,S) ince filmlerin enerji aralığı ve kristal yapısının, filmlerdeki sülfür konsantrasyonlarının değiştirilmesiyle ayarlanabileceği gösterilmiştir. Ayrıca, 2.4 eV'lik yasak enerji band aralığına sahip, n-tipi yarıiletken olan CdS tampon tabakaları kimyasal banyo biriktirme tekniği ile kaplanarak, optimizasyonuda yapılmıştır. SLG/Mo/CZTS/CdS/i-ZnO/AZO yapısında güneş pilleri üretilmiştir. CdS tampon tabakasının kalınlığının, büyütülen güneş hücrelerinin verimliliği üzerindeki etkisi araştırılmıştır. Pencere katman olarak alüminyum katkılı çinko oksit (AZO) ince filmlerin kaplanarak; alttaş pozisyonunun ve alttaş döndürme hızının filmlerin yapısal, optiksel ve elektriksel özellikleri üzerindeki etkisi araştırılmıştır. Filmler üzerindeki stresin filmlerin hedef ekseninden uzağa yerleştirilmesi ve kaplama sırasında örnek tutucunun döndürülmesi ile önemli ölçüde azaltılabileceği gösterilmiştir. En iyi cihaz, öncüllerde Sn tabakasına bitişik kalın Cu tabakasına sahip olan ve 30 dak boyunca sülfürlenen CZTS filmlerinden elde edilmiştir.Article Citation - WoS: 18Citation - Scopus: 20Impact of Incorporated Oxygen Quantity on Optical, Structural and Dielectric Properties of Reactive Magnetron Sputter Grown High-? Hfo2/Hf Thin Film(Elsevier Ltd., 2014) Cantaş, Ayten; Aygün, Gülnur; Turan, RaşitHigh-κ hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and high-κ film, prior to HfO2 deposition, a thin Hf buffer layer was deposited on p-type (1 0 0) Si substrate at room temperature. Effect of oxygen gas quantity in the O2/Ar gas mixture was studied for the optical and structural properties of grown HfO2 high-κ thin films. The grown thin oxide films were characterized optically using spectroscopic ellipsometer (SE) in detail. Crystal structure was studied by grazing incidence X-ray diffractometer (GIXRD) technique, while bonding structure was obtained by Fourier transform infrared spectroscopy (FTIR) analyses. In agreement with GIXRD and FTIR analyses, SE results show that any increment above ideal quantity of oxygen content in the gas mixture resulted in decrements in the refractive index and thickness of HfO2 dielectric film, while increments in SiO2 thickness. It is apparent from experimental results that oxygen to argon gas ratio needs to be smaller than 0.2 for a good film quality. The superior structural and optical properties for grown oxide film were obtained for O2/Ar gas ratio of about 0.05-0.1 combined with ∼30 W constant rf sputtering power. © 2014 Elsevier B.V. All rights reserved.Conference Object Citation - WoS: 33Citation - Scopus: 35Effects of Physical Growth Conditions on the Structural and Optical Properties of Sputtered Grown Thin Hfo2 Films(Elsevier Ltd., 2011) Aygün, Gülnur; Cantaş, Ayten; Şimşek, Yılmaz; Turan, RaşitHfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O 2/Ar gas ratio during sputtering, and substrate temperature. XRD spectra show that the deposited films have (111) monoclinic phase of HfO 2, which is also supported by FTIR spectra. XPS depth profiling spectra shows that highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind. © 2010 Elsevier B.V. All rights reserved.Article Citation - WoS: 10Citation - Scopus: 10Evolution of Sio2/Ge Multilayer Structure During High Temperature Annealing(Elsevier Ltd., 2010) Şahin, D.; Yıldız, İlker; Gençer İmer, Arife; Aygün, Gülnur; Slaoui, A.; Turan, RaşitUse of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications. The device structure consists of a thin HfO2 tunneling oxide with a Ge layer either in the form of continuous layer or discrete nanocrystals and relatively thicker SiO2 layer functioning as a control oxide. In this work, we studied interface properties and formation kinetics in SiO2/Ge/HfO2(Ge) multilayer structure during deposition and annealing. This material structure was fabricated by magnetron sputtering and studied by depth profiling with XPS and by Raman spectroscopy. It was observed that Ge atoms penetrate into HfO2 layer during the deposition and segregate out with annealing. This is related to the low solubility of Ge in HfO2 which is observed in other oxides as well. Therefore, Ge out diffusion might be an advantage in forming well controlled floating gate on top of HfO2. In addition we observed the Ge oxidation at the interfaces, where HfSiOx formation is also detected. © 2009 Elsevier B.V. All rights reserved.Article Citation - WoS: 12Citation - Scopus: 12Ge Nanocrystals Embedded in Sio2 in Mos Based Radiation Sensors(Elsevier Ltd., 2010) Aktağ, Aliekber; Yılmaz, Ercan; Mogaddam, Nader A.P.; Aygün, Gülnur; Cantaş, Ayten; Turan, RaşitIn this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO2 have been investigated. SiO2 films containing nanoparticles of Ge were grown using the r.f.-magnetron sputtering technique. Formation of Ge nanocrystals was observed after high temperature annealing in an inert atmosphere and confirmed by Raman measurements. The intensity of the Raman signal originating from Ge nanocrystals was found to decrease with increasing gamma radiation. The study also includes the gamma radiation effects on MOS structure with Ge nanocrystals embedded in SiO2. The gamma radiation effects from 500 up to 4000 Gray were investigated. Capacitance-voltage measurements were performed and analyzed. Oxide traps and interface trap charges were calculated. Results show that MOS structure with Ge nanocrystals embedded in SiO2 is a good candidate to be used in radiation sensors, especially at high radiation doses. © 2010 Elsevier B.V. All rights reserved.Article Citation - WoS: 25Citation - Scopus: 26Structural and Optical Characteristics of Tantalum Oxide Grown by Pulsed Nd:yag Laser Oxidation(AVS Science and Technology Society, 2006) Atanassova, Elenada A.; Aygün, Gülnur; Turan, Raşit; Babeva, T.Tantalum pentoxide (Ta2 O5) thin films (20-50 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta film deposited on Si. The chemical bonding, structure, and optical properties of the films have been studied by Fourier transform infrared spectroscopy, x-ray diffraction, and reflectance measurements at normal light incidence in the spectral range of 350-800 nm. The effect of the substrate temperature (250-400 °C) during oxidation and its optimization with respect to the used laser beam energy density (3.2-3.4 J cm2 per pulse) is discussed. It is established that the substrate temperature is a critical factor for the effectiveness of the oxidation process and can be used to control the composition and amorphous status of the films. The film density explored by refractive index is improved with increasing film thickness. The refractive index of the layers grown under the higher laser beam energy density and at substrate temperature of 350-400 °C was found to be close to the value of bulk Ta2 O5. The films are amorphous at substrate temperature below 350 °C and possessed an orthorhombic (Β- Ta2 O5) crystal structure at higher temperatures. The thinner layers crystallize at a little higher temperature.Article Citation - WoS: 14Citation - Scopus: 18Xps Study of Pulsed Nd:yag Laser Oxidized Si(Elsevier Ltd., 2006) Özyüzer, Gülnur Aygün; Aygün, Gülnur; Atanassova, Elenada A.; Kostov, K.; Turan, RaşitX-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented. The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established that the oxide is non-stoichiometric, and contains all oxidation states of Si in different amounts throughout the film. The interface Si/laser-grown oxide is not abrupt, and the coexistence of Si2O3 and Si2O suboxides in a relatively wide interfacial region is found. It is concluded that post-oxidation annealing is necessary in order to improve the microstructure of both oxide and near interface region.Article Citation - WoS: 24Citation - Scopus: 24Electrical and Dielectrical Properties of Tantalum Oxide Films Grown by Nd:yag Laser Assisted Oxidation(Elsevier Ltd., 2008) Aygün, Gülnur; Turan, RaşitTantalum pentoxide (Ta2O5) thin films (20 to 44 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta deposited films with various thickness on Si. Fourier Transform Infrared (FTIR) spectrum, thickness distribution, dielectric and electrical properties of laser grown oxide layers have been studied. The effect of the sputtered Ta film thickness, laser beam energy density and the substrate temperature on the final Ta2O5 film structure has been determined. It is shown that the oxide layers obtained for the laser beam energy density in the range from 3.26 to 3.31 J/cm2 and the substrate temperature around 350 °C have superior properties. FTIR measurement demonstrates that the Ta2O5 layers are obtained with the laser assisted oxidation technique. Metal Oxide Semiconductor capacitors fabricated on the grown oxide layers exhibits typical Capacitance-Voltage, Conductance-Voltage and Current-Voltage characteristics. However, the density of oxide charges is found to be slightly higher than the typical values of thermally grown oxides. The conduction mechanism studied by Current-Voltage measurements of the capacitors indicated that the current flow through the oxide layer is modified Poole-Frenkel type. It is concluded that the Ta2O5 films formed by the technique of Nd:YAG laser-enhanced oxidation at relatively low substrate temperatures are potentially useful for device applications and their properties can be further improved by post oxidation annealing processes. © 2008 Elsevier B.VConference Object Citation - WoS: 7Citation - Scopus: 8Properties of Reactive O2 Ion Beam Sputtered Tio2 on Si Wafers(National Institute of Optoelectronics, 2005) Ulucan, Savaş; Özyüzer, Gülnur Aygün; Özyüzer, Lütfi; Eğilmez, Mehmet; Turan, RaşitTiO2 thin films were deposited on silicon (100) p-type wafers, using the reactive ion beam sputtering method in high vacuum as an alternative to conventional Argon ion beam sputtering in an O2 environment. Oxygen ions with 1000 eV energy were formed in a thruster and bombarded a high purity Ti target. The molecules of TiO2 were deposited on a Si (100) wafer at various substrate temperatures. The structural and optical properties were analyzed using Fourier Transform Infrared Spectroscopy in the range of 400-4000 cm-1. An ellipsometer was used to measure the thickness and refractive index of the deposited films. In order to determine the dielectric constant and capacitance of the deposited TiO2, the electrical properties were studied using an MOS capacitor. The effects of substrate temperature and deposition time on the dielectric properties of TiO2 are discussed.