Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 4Citation - Scopus: 5Conductance Fluctuations in Undoped Hydrogenated Amorphous Silicon-Germanium Alloy Thin Films(Elsevier Ltd., 2002) Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O.; Yang, Jeffrey C.; Guha, SubhenduWe report coplanar conductance fluctuations of device quality, undoped hydrogenated amorphous silicon-germanium alloy thin films (a-SiGe:H) measured from 430 to 490 K. The a-SiGe:H alloys produce noise power spectra similar to coplanar undoped a-Si:H films in the same temperature range. The noise power spectrum S(n) does not fit a single 1/fα power law but rather has two distinct regions, each accurately fitted by a power law, but with different slopes. The low frequency slope α1 is similar to that observed in undoped a-Si:H films varying from 1.30 to 1.46 for different Ge concentrations and shows a slight temperature dependence. At higher frequencies, the slope α2 is less than unity and temperature independent but depends on the Ge content of the film. α2 decreases from 0.60 for no Ge (pure a-Si:H) to 0.15 for 40 at.% Ge. The noise power at lower frequencies increases and at higher frequencies decreases substantially as the temperature increases from 430 to 490 K. We infer that similar noise mechanisms are operating in undoped a-SiGe:H and a-Si:H films but that the Ge content is influencing the noise, particularly the slope at higher frequencies. In addition, the noise has the expected quadratic dependence on bias current and obeys Gaussian statistics.Article Citation - WoS: 17Citation - Scopus: 18Analysis of Interface States of the Pentacene Organic Thin-Film Phototransistor by Conductance Technique(Elsevier Ltd., 2009) Okur, Salih; Yakuphanoğlu, FahrettinA pentacene thin-film transistor with a channel width of 300 μm and a channel length of 30 μm has been successfully fabricated on n-Si substrate with thermally oxidized SiO2 as a gate insulator. The photovoltaic and interface state density properties of the transistor have been investigated. A pentacene film of 200 nm thickness was deposited on the SiO2 layer with a vacuum thermal evaporator. Atomic force microscopy images of the pentacene film on SiO2 insulating layer show a homogeneous film surface with the rms roughness of 11 nm. The transistor shows p-channel characteristics, as a result of positive carriers generated in the pentacene film for the negative bias voltages applied to the gate. The photosensitivity (Iph/Idark) is measured as 1.45 at an illumination intensity of 3500 lux at the off state. This suggests that the pentacene thin-film transistor shows a phototransistor characteristic. The field-effect mobility of the pentacene OTFT was found to be 0.021 cm2/(V s). The interface state density of the transistor was determined using conductance technique and was found to be about 1.191 × 1010 eV-1 cm-2.Article Citation - WoS: 31Citation - Scopus: 40Structural and Magnetic Characterization of Plasma Ion Nitrided Layer on 316l Stainless Steel Alloy(Elsevier Ltd., 2009) Öztürk, Orhan; Okur, Salih; Riviere, Jean PaulIn this study, an FeCrNi alloy (316L stainless steel disc) was nitrided in a low-pressure R.F. plasma at 430 °C for 72 min under a gas mixture of 60% N2-40% H2. Structural, compositional and magnetic properties of the plasma nitrided layer was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and magnetic force microscopy (MFM). The magnetic behaviour of the nitrided layer was also investigated with a vibrating sample magnetometer (VSM). Combined X-ray diffraction, cross-sectional SEM, AFM and MFM, as well as VSM analyses provide strong evidence for the formation of the γN phase, [γN-(Fe, Cr, Ni)], with mainly ferromagnetic characteristics. The uniform nature of the γN layer is clearly demonstrated by the XRD, cross-sectional SEM and AFM analyses. Based on the AFM and SEM data, the thickness of the γN layer is found to be ∼6 μm. According to the MFM and VSM analyses, ferromagnetism in the γN layer is revealed by the observation of stripe domain structures and the hysteresis loops. The cross-sectional MFM results demonstrate the ferromagnetic γN phase distributed across the plasma nitrided layer. The MFM images show variation in the size and form of the magnetic domains from one grain to another.Article Citation - WoS: 18Citation - Scopus: 22Microstructural and Mechanical Characterization of Nitrogen Ion Implanted Layer on 316l Stainless Steel(Elsevier Ltd., 2009) Öztürk, OrhanNitrogen ion implantation can be used to improve surface mechanical properties (hardness, wear, friction) of stainless steels by modifying the near-surface layers of these materials. In this study, a medical grade FeCrNi alloy (316L stainless steel plate) was implanted with 85 keV nitrogen ions to a high fluence of 1 × 1018N2+ / cm2 at a substrate temperature <200 °C in an industrial implantation facility. The N implanted layer microstructures, thicknesses and strengths were studied by a combination of X-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS), atomic force microscopy (AFM) and nanohardness measurements. AFM was also used for the surface roughness analysis of the implanted as well as polished materials. The CEMS analysis indicate that the N implanted layer is ∼200 nm thick and is composed of ε-(Fe,Cr,Ni)2+xN-like nitride phase with mainly paramagnetic characteristics. The nanohardness measurements clearly indicate an enhanced hardness behaviour for the N implanted layer. It is found that the implanted layer hardness is increased by a factor of 1.5 in comparison to that of the substrate material. The increased hardness resulting from nitrogen implantation is attributed to the formation of ε nitride phase.Article Citation - WoS: 2Citation - Scopus: 4Signal Performance of Dc-Squids With Respect To Ybco Thin Film Deposition Rate(Elsevier Ltd., 2009) Avcı, İlbeyi; Algül, Berrin Pınar; Akram, Rizwan; Bozbey, Ali; Tepe, Mustafa; Abukay, DoğanThe signal performances of YBa2Cu3O7-δ (YBCO) direct current superconducting quantum interference devices (DC-SQUIDs) have been investigated as a function of the thin film structure affected by the growth process. YBCO thin films of 200 nm thicknesses were deposited by DC magnetron sputtering using different deposition rates between 1.0 nm/min and 2.0 nm/min onto 24° bicrystal SrTiO3 (STO) substrates. The thin film samples were subsequently analyzed by XRD and AFM in order to determine their crystalline structures and surface morphologies respectively. The 67 pH directly coupled DC-SQUIDs with 4 μm-wide bicrystal Josephson junctions were fabricated, and characterized with respect to their device performances. The variations in the critical current (Ic), the voltage modulation depth (ΔV) and the noise performance of DC-SQUIDs were reported. The SQUIDs having relatively low deposition rate of 1.0 nm/min was observed to have larger voltage modulation depth as well as higher critical current than that of the samples having larger rate of 2.0 nm/min. The better noise performances were observed as the film deposition rate decreases. The results were associated with the thin film structure and the SQUID characteristics.Article Citation - WoS: 15Citation - Scopus: 17Influence of Crystallographic Orientation on Hydration of Mgo Single Crystals(Elsevier Ltd., 2009) Sütçü, Mücahit; Akkurt, Sedat; Okur, SalihThis study has been performed in order to find out the influence of crystallographic orientation on hydration of MgO single crystal substrates with (1 0 0)-, (1 1 0)-, and (1 1 1)-orientations. The samples were left in a hydration chamber with an 88% relative humidity for 18 h at room temperature. The effect of humidity on the samples was examined by scanning probe microscope (SPM) and scanning electron microscope (SEM) which showed that the degree of hydration was noticeably influenced by the crystallographic orientation. It was found that the MgO with (1 1 1)-orientation has the highest tendency to hydrate than the other orientations. Second most affected sample was (1 1 0) crystal. Loss of MgO on the surface by hydration is most severe when the crystal is oriented in (1 1 1) plane with the maximum hydrate layer thickness of 174 nm after 18 h of exposure.Article Citation - WoS: 13Citation - Scopus: 13Higgs Boson Masses in the Mssm With General Soft Breaking(Elsevier Ltd., 2008) Sabancı, Aslı; Hayreter, Alper; Solmaz, LeventThe operators that break supersymmetry can be holomorphic or non-holomorphic in structure. The latter do not pose any problem for gauge hierarchy and are soft provided that the particle spectrum does not contain any gauge singlets. In minimal supersymmetric model (MSSM) we discuss the impact of non-holomorphic soft-breaking terms on the Higgs sector. We find that non-holomorphic operators can cause significant changes as are best exhibited by the correlation between the masses of the charginos and Higgs bosonsArticle Citation - WoS: 150Citation - Scopus: 146Direct Observation of Tetrahertz Electromagnetic Waves Emitted From Intrinsic Josephson Junctions in Single Crystalline Bi2sr2cacu2o8+?(Elsevier Ltd., 2008) Kadowaki, K.; Yamaguchi, H.; Kawamata, K.; Yamamoto, T.; Minami, H.; Kakeya, I.; Welp, U.; Özyüzer, Lütfi; Koshelev, A. E.; Kurter, Cihan; Gray, Kenneth E.; Kwok, W. K.We have observed intense, coherent, continuous and monochromatic electromagnetic (EM) emission at terahertz frequencies generated from a single crystalline mesa structure of the high-Tc superconductor Bi2Sr2CaCu2O8+δ intrinsic Josephson junction system. The mesa is fabricated by the Argon-ion-milling and photolithography techniques on the cleaved surface of Bi2Sr2CaCu2O8+δ single crystal. The frequency, ν, of the EM radiation observed from the sample obeys simple relations: ν = c/nλ = c/2nw and ν = 2eV/hN, where c is the light velocity in vacuum, n the refractive index of a superconductor, λ the wave length of the EM emission in vacuum, w the shorter width of the mesa, V the voltage applied to the mesa, N the number of layers of intrinsic Josephson junctions, e and h are the elementary charge and the Planck constant, respectively. These two relations strongly imply that the mechanism of the emission is, firstly, due to the geometrical resonance of EM waves to the mesa like a cavity resonance occuring in the mesa structure, and forming standing waves as cavity resonance modes, and secondly, due to the ac-Josephson effect, which works coherently in all intrinsic Josephson junctions. The peculiar temperature dependence of the power intensity emitted form samples shows a broad maximum in a temperature region between 20 and 40 K, suggesting that the nonequilibrium effect plays an essential role for the emission of EM waves in this system. The estimated total power is significantly improved in comparison with the previous report [L. Ozyuzer et al., Science 318 (2007) 1291, K. Kadowaki, et al., Physica C 437-438 (2006) 111, I.E. Batov, et al., Appl. Phys. Lett. 88 (2006) 262504], and reached as high as 5 μW from single mesa with w = 60 μm at 648 GHz, which enables us to use it for some of applications. So far, we succeeded in fabricating the mesa emitting EM waves up to 960 GHz in the fundamental mode in the w = 40 μm mesa, whereas the higher harmonics up to the 4-th order were observed, resulting in a frequency exceeding 2.5 THz. In sharp contrast to the previous reports [K. Kadowaki, et al., Physica C 437-438 (2006) 111, M.-H. Bae, et al., Phys. Rev. Lett. 98, (2007) 027002], all the present measurements were done in zero magnetic field. Lastly, a plausible theoretical model for the mechanism of emission is discussed.Article Citation - WoS: 3Citation - Scopus: 4Analytical Approaches To the Delta-Eddington Model of the Radiative Transfer Through Vertically Inhomogeneous Optical Depths(Elsevier Ltd., 2008) Subaşılar, BedrettinAnalytical approaches have been developed for one-dimensional monochromatic delta-Eddington radiative transfer equation through a vertically inhomogeneous medium. They are based on the solution of the Riccati equation that arises from the decoupling of the two-stream radiances, and seek to approximate the exponent functions in the solution as opposed to finding the solution as a whole. Depending on the case, Green-Liouville approximation or other techniques presented in this paper are utilized for finding these exponents. Though developed for atmospheric radiative transfer problems applicable to the global climate change modelling, and for non-invasive medical applications on tissue-light interactions, the techniques considered here are quiet general in nature. Hence, they can also be useful in other boundary value problems of the diffusion type that involve linear second order ordinary differential equations with variable coefficients.Article Citation - WoS: 43Citation - Scopus: 45Electrical and Interface Properties of Au/Dna Organic-On Structures(Elsevier Ltd., 2009) Okur, Salih; Yakuphanoğlu, Fahrettin; Özsöz, Mehmet; Kadayıfçılar, Pınar KaraThe effect of the thickness and coverage rate of a DNA film on the electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures has been investigated. The thin film properties of the DNA deposited on n-Si wafer were characterized by atomic force microscopy. The effect of the thickness and coverage rate of the DNA layer was investigated by evaluating electrical parameters, such as the barrier height, ideality factor, series resistance, and interface state density. The thickness and coverage rate of the DNA layer significantly affects the electrical properties of the Au/DNA/n-Si organic-on-inorganic structures. The interface state density properties of the Au/DNA/n-Si diodes were determined by conductance technique. The results show that the interface state density decreases with decrease in both film thickness and coverage rate of the DNA in an acetate buffer, modifying the electronic parameters of the Au/DNA/n-Si diodes.