Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 4Citation - Scopus: 5Conductance Fluctuations in Undoped Hydrogenated Amorphous Silicon-Germanium Alloy Thin Films(Elsevier Ltd., 2002) Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O.; Yang, Jeffrey C.; Guha, SubhenduWe report coplanar conductance fluctuations of device quality, undoped hydrogenated amorphous silicon-germanium alloy thin films (a-SiGe:H) measured from 430 to 490 K. The a-SiGe:H alloys produce noise power spectra similar to coplanar undoped a-Si:H films in the same temperature range. The noise power spectrum S(n) does not fit a single 1/fα power law but rather has two distinct regions, each accurately fitted by a power law, but with different slopes. The low frequency slope α1 is similar to that observed in undoped a-Si:H films varying from 1.30 to 1.46 for different Ge concentrations and shows a slight temperature dependence. At higher frequencies, the slope α2 is less than unity and temperature independent but depends on the Ge content of the film. α2 decreases from 0.60 for no Ge (pure a-Si:H) to 0.15 for 40 at.% Ge. The noise power at lower frequencies increases and at higher frequencies decreases substantially as the temperature increases from 430 to 490 K. We infer that similar noise mechanisms are operating in undoped a-SiGe:H and a-Si:H films but that the Ge content is influencing the noise, particularly the slope at higher frequencies. In addition, the noise has the expected quadratic dependence on bias current and obeys Gaussian statistics.Article Citation - WoS: 16Citation - Scopus: 18Tunneling Studies of Multilayered Superconducting Cuprate (cu,c)ba2ca3cu4o12+?(World Scientific Publishing Co. Pte Ltd, 2003) Miyakawa, Nobuaki; Tokiwa, K.; Mikusu, S.; Zasadzinski, John F.; Özyüzer, Lütfi; İshihara, T.; Kaneko, Tsutomu; Watanabe, T.; Gray, Kenneth E.Point contact tunneling data are reported in a multilayered high-T c cuprate (Cu,C)Ba2Ca3Cu4O 12+δ with Tc = 117 K. The tunneling spectra in the superconducting state (T ≪ Tc) display spectral features such as well-defined superconducting gap peak at ±Δ as well as dip-hump structures beyond the peaks. In some cases, the spectra with two-gaps have been observed, indicating the coexistence of two inequivalent superconducting layers. The statistical distribution of superconducting gap magnitude suggests two distinct kinds of superconducting gaps that may originate from two inequivalent CuO2 planes, a characteristics of multilayered cuprates with n ≥ 3.Article Citation - WoS: 59Citation - Scopus: 59Interfacial and Structural Properties of Sputtered Hfo2 Layers(American Institute of Physics, 2009) Özyüzer, Gülnur Aygün; Yıldız, İlkerMagnetron sputtered HfO2 layers formed on a heated Si substrate were studied by spectroscopic ellipsometer (SE), x-ray diffraction (XRD), Fourier transform infrared (FTIR), and x-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO x suboxide layer at the HfO2 /Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O2 /Ar gas ratio during sputtering, sputtering time, and substrate temperature. XRD spectra show that the deposited film has (111) monoclinic phase of HfO2, which is also supported by FTIR spectra. The atomic concentration and chemical environment of Si, Hf, and O have been measured as a function of depth starting from the surface of the sample by XPS technique. It shows that HfO2 layers of a few nanometers are formed at the top surface. Below this thin layer, Si-Si bonds are detected just before the Si suboxide layer, and then the Si substrate is reached during the depth profiling by XPS. It is clearly understood that the highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind.Article Citation - WoS: 12Citation - Scopus: 15Local Oxidation Nanolithography on Hf Thin Films Using Atomic Force Microscopy (afm)(IOP Publishing Ltd., 2009) Büyükköse, Serkan; Okur, Salih; Özyüzer, Gülnur AygünWell controlled Hf oxide patterns have been grown on a flat Hf thin film surface produced by the dc magnetron sputtering method on Si and SiOx substrates. These patterns have been created by using the technique of semi-contact scanning probe lithography (SC-SPL). The thickness and width of the oxide patterns have been measured as a function of applied voltage, duration and relative humidity. There is a threshold voltage even at 87% humidity, due to insufficient energy required to start the oxide growth process for a measurable oxide protrusion. Electrical characterization was also performed via the I-V curves of Hf and HfOx structures, and the resistivity of HfO x was found to be 4.284 × 109 Ω cm. In addition to the I-V curves, electric force microscopy and spreading surface resistance images of Hf and HfOx were obtained.Article Citation - WoS: 7Citation - Scopus: 8A Way To Get Rid of Cosmological Constant and Zero-Point Energy Problems of Quantum Fields Through Metric Reversal Symmetry(IOP Publishing Ltd., 2008) Erdem, RecaiIn this paper, a framework is introduced to remove the huge discrepancy between the empirical value of the cosmological constant and the contribution to the cosmological constant predicted from the vacuum energy of quantum fields. An extra-dimensional space with metric reversal symmetry and R2 gravity (that reduces to the usual R gravity after integration over extra dimensions) is considered to this end. The resulting four-dimensional energy-momentum tensor (obtained after integration over extra dimensions) consists of terms that contain off-diagonally coupled pairs of Kaluza-Klein modes. This, in turn, generically results in the vanishing of the vacuum expectation value of the energy-momentum tensor for quantum fields, and offers a way to solve the problem of huge contribution of quantum fields to the vacuum energy density.Article Citation - WoS: 38Citation - Scopus: 42Layered Clay/Epoxy Nanocomposites: Thermomechanical, Flame Retardancy, and Optical Properties(John Wiley and Sons Inc., 2008) Kaya, Elçin; Tanoğlu, Metin; Okur, SalihIn this study, layered clay/polymer nano-composites were developed based on epoxy resins and montmorillonite as the nanoplatelet reinforcement. Clay particles were treated with hexadecyltrimethylammonium chloride (HTCA) through an ion exchange reaction. In this way, Na+ interlay er cations of the clay is exchanged with onium cation of the surfactant that turns the hydrophilic clays (MMT) to organophilic (OMMT) characteristics. Thermal analysis results revealed that the glass transition temperature (Tg) and the dynamic mechanical properties including the storage and loss modulus of the neat epoxy resin increases by the incorporation of clay particles. It was also found that flame resistance of the polymer is improved by the addition of the clay particles.Article Citation - WoS: 43Citation - Scopus: 45Electrical and Interface Properties of Au/Dna Organic-On Structures(Elsevier Ltd., 2009) Okur, Salih; Yakuphanoğlu, Fahrettin; Özsöz, Mehmet; Kadayıfçılar, Pınar KaraThe effect of the thickness and coverage rate of a DNA film on the electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures has been investigated. The thin film properties of the DNA deposited on n-Si wafer were characterized by atomic force microscopy. The effect of the thickness and coverage rate of the DNA layer was investigated by evaluating electrical parameters, such as the barrier height, ideality factor, series resistance, and interface state density. The thickness and coverage rate of the DNA layer significantly affects the electrical properties of the Au/DNA/n-Si organic-on-inorganic structures. The interface state density properties of the Au/DNA/n-Si diodes were determined by conductance technique. The results show that the interface state density decreases with decrease in both film thickness and coverage rate of the DNA in an acetate buffer, modifying the electronic parameters of the Au/DNA/n-Si diodes.Article Citation - WoS: 12Citation - Scopus: 12Modification of Metal/Semiconductor Junctions by Self-Assembled Monolayer Organic Films(Elsevier Ltd., 2009) Yakuphanoğlu, Fahrettin; Okur, Salih; Özgener, HüseyinTwo new metal/molecule/semiconductor contacts, Au/n-Si/TDA/Au and Au/p-Si/ODM/Au, were fabricated to understand effect of organic compounds, tridecylamine and octadecylmercaptan self-assembled monolayer (SAM) films, on electrical charge transport properties of the metal/semiconductor junctions. The morphology of the organic monolayers deposited on Si substrates was investigated by atomic force microscopy. The molecular coverage of ODM deposited on p-Si is poorer than that of TDA on n-Si substrate. The ideality factors of the p-Si/ODM and n-Si/TDA diodes were found to be 1.66 and 1.48, respectively. The electrical results show that the tridecylamine monolayer passivated junction has a lower ideality factor. The ideality factor indicates clear dependence on two different type functional groups R-SH (Thiol) and R-NH2 (Amin) groups and it increases with different functional groups of organic molecule. The barrier height φb value of the n-Si/TDA diode is smaller than that of p-Si/ODM diode, as a result of chain length of the SAM organic molecules. The interface state density Dit values of the diodes were determined using conductance technique. The n-Si/TDA diode has the smaller interface state density according to p-Si/ODM diode. We have evaluated that the organic molecules control the electronic parameters of metal/semiconductor diodes and thus, organic modification helps to get one step closer towards to new organic assisted silicon based microelectronic devices.Article Citation - WoS: 40Citation - Scopus: 45Terahertz Wave Emission From Intrinsic Josephson Junctions in High- Tc Superconductors(IOP Publishing Ltd., 2009) Özyüzer, Lütfi; Şimşek, Yılmaz; Köseoğlu, Hasan; Türkoğlu, Fulya; Kurter, Cihan; Welp, U.; Koshelev, A. E.; Gray, Kenneth E.; Kwok, W. K.; Yamamoto, T.; Kadowaki, K.; Koval, Yu I.; Wang, Huabing; Müller, Paul H.Recently, we experimentally demonstrated that rectangular mesa structures of intrinsic Josephson junctions (IJJ) in Bi2Sr2CaCu 2O8+d (Bi2212) can be used as a compact solid-state generator of continuous, coherent and polarized terahertz (THz) radiation. In the present work, we will exhibit tall mesas (over 600 junctions) which were fabricated using UV lithography, e-beam lithography with photoresist and e-beam lithography with a Ti selective etching technique. We will present measurements of the c-axis resistance as a function of temperature and of current-voltage characteristics of THz emitting mesas with lateral sizes ranging from 30 × 300 to 100 × 300νm2. Furthermore, we will discuss the dependence of the characteristics of the mesa structures on the oxygen doping level of the Bi2212 crystals. We will also experimentally show that the voltage-frequency relation of the ac Josephson effect has to match the cavity resonance for successful emission.Article Citation - WoS: 25Citation - Scopus: 26Structural and Optical Characteristics of Tantalum Oxide Grown by Pulsed Nd:yag Laser Oxidation(AVS Science and Technology Society, 2006) Atanassova, Elenada A.; Aygün, Gülnur; Turan, Raşit; Babeva, T.Tantalum pentoxide (Ta2 O5) thin films (20-50 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta film deposited on Si. The chemical bonding, structure, and optical properties of the films have been studied by Fourier transform infrared spectroscopy, x-ray diffraction, and reflectance measurements at normal light incidence in the spectral range of 350-800 nm. The effect of the substrate temperature (250-400 °C) during oxidation and its optimization with respect to the used laser beam energy density (3.2-3.4 J cm2 per pulse) is discussed. It is established that the substrate temperature is a critical factor for the effectiveness of the oxidation process and can be used to control the composition and amorphous status of the films. The film density explored by refractive index is improved with increasing film thickness. The refractive index of the layers grown under the higher laser beam energy density and at substrate temperature of 350-400 °C was found to be close to the value of bulk Ta2 O5. The films are amorphous at substrate temperature below 350 °C and possessed an orthorhombic (Β- Ta2 O5) crystal structure at higher temperatures. The thinner layers crystallize at a little higher temperature.