Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 31Citation - Scopus: 40Structural and Magnetic Characterization of Plasma Ion Nitrided Layer on 316l Stainless Steel Alloy(Elsevier Ltd., 2009) Öztürk, Orhan; Okur, Salih; Riviere, Jean PaulIn this study, an FeCrNi alloy (316L stainless steel disc) was nitrided in a low-pressure R.F. plasma at 430 °C for 72 min under a gas mixture of 60% N2-40% H2. Structural, compositional and magnetic properties of the plasma nitrided layer was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and magnetic force microscopy (MFM). The magnetic behaviour of the nitrided layer was also investigated with a vibrating sample magnetometer (VSM). Combined X-ray diffraction, cross-sectional SEM, AFM and MFM, as well as VSM analyses provide strong evidence for the formation of the γN phase, [γN-(Fe, Cr, Ni)], with mainly ferromagnetic characteristics. The uniform nature of the γN layer is clearly demonstrated by the XRD, cross-sectional SEM and AFM analyses. Based on the AFM and SEM data, the thickness of the γN layer is found to be ∼6 μm. According to the MFM and VSM analyses, ferromagnetism in the γN layer is revealed by the observation of stripe domain structures and the hysteresis loops. The cross-sectional MFM results demonstrate the ferromagnetic γN phase distributed across the plasma nitrided layer. The MFM images show variation in the size and form of the magnetic domains from one grain to another.Article Citation - WoS: 18Citation - Scopus: 22Microstructural and Mechanical Characterization of Nitrogen Ion Implanted Layer on 316l Stainless Steel(Elsevier Ltd., 2009) Öztürk, OrhanNitrogen ion implantation can be used to improve surface mechanical properties (hardness, wear, friction) of stainless steels by modifying the near-surface layers of these materials. In this study, a medical grade FeCrNi alloy (316L stainless steel plate) was implanted with 85 keV nitrogen ions to a high fluence of 1 × 1018N2+ / cm2 at a substrate temperature <200 °C in an industrial implantation facility. The N implanted layer microstructures, thicknesses and strengths were studied by a combination of X-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS), atomic force microscopy (AFM) and nanohardness measurements. AFM was also used for the surface roughness analysis of the implanted as well as polished materials. The CEMS analysis indicate that the N implanted layer is ∼200 nm thick and is composed of ε-(Fe,Cr,Ni)2+xN-like nitride phase with mainly paramagnetic characteristics. The nanohardness measurements clearly indicate an enhanced hardness behaviour for the N implanted layer. It is found that the implanted layer hardness is increased by a factor of 1.5 in comparison to that of the substrate material. The increased hardness resulting from nitrogen implantation is attributed to the formation of ε nitride phase.Article Citation - WoS: 59Citation - Scopus: 59Interfacial and Structural Properties of Sputtered Hfo2 Layers(American Institute of Physics, 2009) Özyüzer, Gülnur Aygün; Yıldız, İlkerMagnetron sputtered HfO2 layers formed on a heated Si substrate were studied by spectroscopic ellipsometer (SE), x-ray diffraction (XRD), Fourier transform infrared (FTIR), and x-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO x suboxide layer at the HfO2 /Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O2 /Ar gas ratio during sputtering, sputtering time, and substrate temperature. XRD spectra show that the deposited film has (111) monoclinic phase of HfO2, which is also supported by FTIR spectra. The atomic concentration and chemical environment of Si, Hf, and O have been measured as a function of depth starting from the surface of the sample by XPS technique. It shows that HfO2 layers of a few nanometers are formed at the top surface. Below this thin layer, Si-Si bonds are detected just before the Si suboxide layer, and then the Si substrate is reached during the depth profiling by XPS. It is clearly understood that the highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind.Conference Object Citation - WoS: 36Citation - Scopus: 40Thermal Management in Large Bi2212 Mesas Used for Terahertz Sources(Institute of Electrical and Electronics Engineers Inc., 2009) Kurter, Cihan; Gray, Kenneth E.; Zasadzinski, John F.; Özyüzer, Lütfi; Koshelev, A. E.; Li, Q.; Yamamoto, T.; Kadowaki, K.; Kwok, W. K.; Tachiki, M.; Welp, U.We present a thermal analysis of a patterned mesa on a Bi 2Sr2CaCu2O8 (Bi2212) single crystal that is based on tunneling characteristics of the c-axis stack of ∼800 intrinsic Josephson junctions in the mesa. Despite the large mesa volume (e.g., 40 × 300 × 1.2 μm3) and power dissipation that result in self-heating and backbending of the current-voltage curve (I-V), there are accessible bias conditions for which significant polarized THz-wave emission can be observed. We estimate the mesa temperature by equating the quasiparticle resistance, Rqp(T), to the ratio V/I over the entire I-V including the backbending region. These temperatures are used to predict the unpolarized black-body radiation reaching our bolometer and there is substantial agreement over the entire I-V. As such, backbending results from the particular R qp (T) for Bi2212, as first discussed by Fenton, rather than a significant suppression of the energy gap. This model also correctly predicts the observed disappearance of backbending above ∼60 K.Article Citation - WoS: 38Citation - Scopus: 42Layered Clay/Epoxy Nanocomposites: Thermomechanical, Flame Retardancy, and Optical Properties(John Wiley and Sons Inc., 2008) Kaya, Elçin; Tanoğlu, Metin; Okur, SalihIn this study, layered clay/polymer nano-composites were developed based on epoxy resins and montmorillonite as the nanoplatelet reinforcement. Clay particles were treated with hexadecyltrimethylammonium chloride (HTCA) through an ion exchange reaction. In this way, Na+ interlay er cations of the clay is exchanged with onium cation of the surfactant that turns the hydrophilic clays (MMT) to organophilic (OMMT) characteristics. Thermal analysis results revealed that the glass transition temperature (Tg) and the dynamic mechanical properties including the storage and loss modulus of the neat epoxy resin increases by the incorporation of clay particles. It was also found that flame resistance of the polymer is improved by the addition of the clay particles.Article Citation - WoS: 21Citation - Scopus: 22Vacuum Energy as the Origin of the Gravitational Constant(Springer Verlag, 2009) Demir, Durmuş AliWe develop a geometro-dynamical approach to the cosmological constant problem (CCP) by invoking a geometry induced by the energy-momentum tensor of vacuum, matter and radiation. The construction, which utilizes the dual role of the metric tensor that it structures both the spacetime manifold and energy-momentum tensor of the vacuum, gives rise to a framework in which the vacuum energy induced by matter and radiation, instead of gravitating, facilitates the generation of the gravitational constant. The non-vacuum sources comprising matter and radiation gravitate normally. At the level of classical gravitation, the mechanism deadens the CCP yet quantum gravitational effects, if strong, can keep it existent.Article Citation - WoS: 25Citation - Scopus: 26Structural and Optical Characteristics of Tantalum Oxide Grown by Pulsed Nd:yag Laser Oxidation(AVS Science and Technology Society, 2006) Atanassova, Elenada A.; Aygün, Gülnur; Turan, Raşit; Babeva, T.Tantalum pentoxide (Ta2 O5) thin films (20-50 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta film deposited on Si. The chemical bonding, structure, and optical properties of the films have been studied by Fourier transform infrared spectroscopy, x-ray diffraction, and reflectance measurements at normal light incidence in the spectral range of 350-800 nm. The effect of the substrate temperature (250-400 °C) during oxidation and its optimization with respect to the used laser beam energy density (3.2-3.4 J cm2 per pulse) is discussed. It is established that the substrate temperature is a critical factor for the effectiveness of the oxidation process and can be used to control the composition and amorphous status of the films. The film density explored by refractive index is improved with increasing film thickness. The refractive index of the layers grown under the higher laser beam energy density and at substrate temperature of 350-400 °C was found to be close to the value of bulk Ta2 O5. The films are amorphous at substrate temperature below 350 °C and possessed an orthorhombic (Β- Ta2 O5) crystal structure at higher temperatures. The thinner layers crystallize at a little higher temperature.Conference Object Citation - WoS: 6Citation - Scopus: 9Sub-Bandgap Optical Absorption Spectroscopy of Hydrogenated Microcrystalline Silicon Thin Films Prepared Using Hot-Wire Cvd (cat-Cvd) Process(Elsevier Ltd., 2006) Göktaş, Oktay; Işık, Nebile; Okur, Salih; Güneş, Mehmet; Carius, Reinhard; Klomfaß, Josef; Finger, FriedhelmHydrogenated microcrystalline silicon (μc-Si:H) thin films with different silane concentration (SC) have been prepared using the HW-CVD technique. Dual beam photoconductivity (DBP), photothermal deflection spectroscopy (PDS), and transmission measurements have been used to investigate the optical properties of the μc-Si:H films. Two different sub-bandgap absorption, α(hν), methods have been applied and analyzed to obtain a better insight into the electronic states involved. A good agreement has been obtained in the absorption spectrum obtained from the PDS and DBP measurements at energies above the bandgap. Differences between PDS and DBP spectra exist below the bandgap energy where DBP spectra always give lower α(hν) values and show a dependence on the SC. For some films, differences exist in the α(hν) spectra when the DBP measurements are carried out through the film and substrate side. In addition, for some films, there remains fringe pattern left on the spectrum after the calculation of the fringe-free absorption spectrum, which indicates structural inhomogeneities present throughout the film.Conference Object Citation - WoS: 8Citation - Scopus: 9Diffusion Length Measurements of Microcrystalline Silicon Thin Films Prepared by Hot-wire/Catalytic Chemical Vapor Deposition (hwcvd)(Elsevier Ltd., 2006) Okur, Salih; Güneş, Mehmet; Finger, Friedhelm; Carius, ReinhardHydrogenated microcrystalline silicon (μc-Si:H) films prepared by using the hot-wire/catalytic chemical vapor deposition (HWCVD) technique at low substrate temperatures between 185 °C and 220 °C with different silane concentrations (SC) were investigated using steady-state photocarrier grating (SSPG) and the steady-state photoconductivity methods (SSPC). Crystalline volume fractions (IC RS) obtained from Raman spectroscopy change from 0.22 to 0.77. The diffusion length (LD) is measured at generation rates between G = 1019 and 1021 cm- 3 s- 1. LD changes from 27 nm to 270 nm, with maximum values around SC = 5%. The dependence of LD on SC is similar to that observed for similar quality microcrystalline silicon films prepared using the VHF-PECVD technique. The grating quality factor, γ0, drops from about 0.9 to 0.5 after transition to the microcrystalline regime as indication of scattering from surface patterns.Article Citation - WoS: 2Citation - Scopus: 2Origin of a Localized Vibrational Mode in a Gasb Substrate With a Mbe-Grown Znte Epilayer(IOP Publishing Ltd., 2006) Kim, Hyunjung; Tarhan, Enver; Chen, G.; Ramdas, A. K.; Sciacca, M. D.; Gunshor, R. L.A localized vibrational mode (LVM) with a remarkable fine structure is observed in the infrared transmission spectrum of a ZnTe epilayer grown with molecular beam epitaxy (MBE) on a GaSb substrate. On the basis of the Zn and Te deposited on the GaSb substrate during the MBE growth of ZnTe, and assuming diffusion of Zn and Te into GaSb, the LVM is attributed to Zn, substitutionally replacing either the cation, Ga (ZnGa), or the anion, Sb (Zn Sb). The frequency of the LVM and its fine structure can then be interpreted in terms of the infrared active modes of 64Zn substituting for Sb as an anti-site impurity and treating the centre as an XY4 quasimolecule. With X≡64Zn and Y≡ 69Ga and 71Ga, occupying the nearest-neighbour sites reflecting all the possible combinations and permutations as well as the natural isotopic abundance of Ga, the fine structure of the LVM can be accounted for quantitatively.
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