Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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  • Conference Object
    Citation - WoS: 7
    Citation - Scopus: 7
    Carbon Deposition on the Stainless Steels Substrates Using Pulsed Plasma
    (National Institute of Optoelectronics, 2008) Pat, Suat; Balbağ, Zafer; Cenik, I.; Ekem, Naci; Okur, Salih; Vladoiu, Rodica; Musa, Geavit
    We have developed a generic method for carbon deposition method for any substrates from methane pulsed plasma. The generic method has been developed for carbon deposition on the stainless steels substrates using pulsed methane plasma. Pulsed plasma was produced at atmospheric pressure methane gas and room temperatures. Methane plasma was generated using with 25kV, 25kHz pulsed power supply. Discharge current approximately 300 mA. Stainless steels probes hold in the 32mm from the methane plasma. Probes dimensions were phi=30mm, h=8mm and 4 mm.
  • Article
    Citation - WoS: 150
    Citation - Scopus: 146
    Direct Observation of Tetrahertz Electromagnetic Waves Emitted From Intrinsic Josephson Junctions in Single Crystalline Bi2sr2cacu2o8+?
    (Elsevier Ltd., 2008) Kadowaki, K.; Yamaguchi, H.; Kawamata, K.; Yamamoto, T.; Minami, H.; Kakeya, I.; Welp, U.; Özyüzer, Lütfi; Koshelev, A. E.; Kurter, Cihan; Gray, Kenneth E.; Kwok, W. K.
    We have observed intense, coherent, continuous and monochromatic electromagnetic (EM) emission at terahertz frequencies generated from a single crystalline mesa structure of the high-Tc superconductor Bi2Sr2CaCu2O8+δ intrinsic Josephson junction system. The mesa is fabricated by the Argon-ion-milling and photolithography techniques on the cleaved surface of Bi2Sr2CaCu2O8+δ single crystal. The frequency, ν, of the EM radiation observed from the sample obeys simple relations: ν = c/nλ = c/2nw and ν = 2eV/hN, where c is the light velocity in vacuum, n the refractive index of a superconductor, λ the wave length of the EM emission in vacuum, w the shorter width of the mesa, V the voltage applied to the mesa, N the number of layers of intrinsic Josephson junctions, e and h are the elementary charge and the Planck constant, respectively. These two relations strongly imply that the mechanism of the emission is, firstly, due to the geometrical resonance of EM waves to the mesa like a cavity resonance occuring in the mesa structure, and forming standing waves as cavity resonance modes, and secondly, due to the ac-Josephson effect, which works coherently in all intrinsic Josephson junctions. The peculiar temperature dependence of the power intensity emitted form samples shows a broad maximum in a temperature region between 20 and 40 K, suggesting that the nonequilibrium effect plays an essential role for the emission of EM waves in this system. The estimated total power is significantly improved in comparison with the previous report [L. Ozyuzer et al., Science 318 (2007) 1291, K. Kadowaki, et al., Physica C 437-438 (2006) 111, I.E. Batov, et al., Appl. Phys. Lett. 88 (2006) 262504], and reached as high as 5 μW from single mesa with w = 60 μm at 648 GHz, which enables us to use it for some of applications. So far, we succeeded in fabricating the mesa emitting EM waves up to 960 GHz in the fundamental mode in the w = 40 μm mesa, whereas the higher harmonics up to the 4-th order were observed, resulting in a frequency exceeding 2.5 THz. In sharp contrast to the previous reports [K. Kadowaki, et al., Physica C 437-438 (2006) 111, M.-H. Bae, et al., Phys. Rev. Lett. 98, (2007) 027002], all the present measurements were done in zero magnetic field. Lastly, a plausible theoretical model for the mechanism of emission is discussed.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Mgb2 Superconducting Thin Films Grown by Magnetron Sputtering
    (National Institute of Optoelectronics, 2007) Ulucan, Savaş; Özyüzer, Lütfi; Okur, Salih
    In this study, we report the growth and properties of MgB2 thin films on polycrystalline Al2O3 substrates. A composite MgB2 target was produced by MgB2 and Mg powder mixing, using a hot pressing technique. MgB2 thin films were grown on Al 2O3 substrates by d.c. magnetron sputtering, without heating the substrate. To enhance the superconducting properties of the as-grown films and to increase the crystal quality, an ex-situ anneal process was applied. The crystal structure of the thin films was determined by X-ray diffraction. The resistivity versus temperature of the deposited MgB2 thin films was studied to examine the transition temperatures of the films under various magnetic fields. The effects of the annealing temperature and annealing time on the electrical properties of MgB2 thin films are revealed.
  • Article
    Citation - WoS: 10
    Citation - Scopus: 12
    The Superconducting Transition Width and Illumination Wavelength Dependence of the Response of Mgo Substrate Ybco Transition Edge Bolometers
    (Elsevier Ltd., 2007) Öktem, B.; Bozbey, Ali; Avcı, İlbeyi; Tepe, Mustafa; Abukay, Doğan; Fardmanesh, M.
    Dependence of the phase and magnitude of the response of MgO substrate YBa2Cu3O7-δ (YBCO) transition edge bolometers to the near infrared radiation on the superconducting transition width is presented in this work. The bolometers were made of YBCO thin films of 200 nm thickness that were grown on single crystal MgO (1 0 0) substrates by DC inverted cylindrical magnetron sputtering. We have measured the responses of both large and small area devices with respect to the bias temperature and radiation modulation frequency. We have observed that the superconducting transition width has major effects on the response of the bolometers such as; on a dip of the phase of the response versus modulation frequency curve around 1 Hz, the rate of decrease of the magnitude of the response, and dependence of the phase of the response on temperature at mid-range modulation frequency. We have investigated a correlation between the superconducting transition width and the YBCO film surface morphology of the devices. In addition, the illumination wavelength dependence of the optical response of both wide and narrow transition width devices has been investigated. Here we present the analysis and the possible mechanisms that can affect the response of the bolometers at the superconducting transition region.
  • Article
    Citation - WoS: 1
    Effect of Magnetic Field on Quasiparticle Branches of Intrinsic Josephson Junctions With Ferromagnetic Layer
    (Elsevier Ltd., 2007) Özyüzer, Lütfi; Özdemir, Mustafa; Kurter, Cihan; Hinks, David G.; Gray, Kenneth E.
    The interlayer tunneling spectroscopy has been performed on micron-sized mesa arrays of HgBr2 intercalated superconducting Bi2212 single crystals. A ferromagnetic multilayer (Au/Co/Au) is deposited on top of the mesas. The spin-polarized current is driven along the c-axis of the mesas through a ferromagnetic Co layer and the hysteretic quasiparticle branches are observed at 4.2 K. Magnetic field evolution of hysteretic quasiparticle branches is obtained to examine the effect of injected spin-polarized current on intrinsic Josephson junction characteristics. It is observed that there is a gradual distribution in quasiparticle branches with the application of magnetic field and increasing field reduces the switching current progressively.
  • Article
    Investigation of the Tunneling Spectra in Hgbr2-Intercalated Bi-2212 Single Crystals Below and Above Tc
    (Elsevier Ltd., 2007) Kurter, Cihan; Mazur, Daniel; Özyüzer, Lütfi; Hinks, David G.; Gray, Kenneth E.
    Interlayer tunneling spectroscopy measurements were performed on mesa arrays of Bi-2212 single crystals, intercalated with HgBr2. Tunneling conductances were obtained over a wide temperature range to examine the spectral features, especially the behavior of the quasiparticle peaks corresponding to superconducting energy gaps (SGs). Experimental spectra showed that gap-like features are still present even for the temperatures far above the transition temperature, Tc. This evidence is consistent with the idea that the SG evolves into a pseudogap above Tc for HgBr2-intercalated Bi-2212 single crystals.
  • Article
    Citation - WoS: 13
    Citation - Scopus: 12
    Mgb2 Superconducting Thin Films Sequentially Fabricated Using Dc Magnetron Sputtering and Thermionic Vacuum Arc Method
    (Elsevier Ltd., 2007) Okur, Salih; Kalkancı, M.; Pat, Suat; Ekem, Naci; Akan, Tamer; Balbağ, Zafer; Musa, G.; Tanoğlu, Metin
    In this work, we discuss fabrication and characterization of MgB2 thin films obtained by sequential deposition and annealing of sandwich like Mg/B/Mg thin films on glass substrates. Mg and B films were prepared using DC magnetron sputtering and thermionic vacuum arc techniques, respectively. The MgB2 thin films showed superconducting critical transition at 33 K after annealing at 650 °C.
  • Conference Object
    Citation - WoS: 1
    Citation - Scopus: 1
    Minority Carrier Properties of Microcrystalline Silicon Thin Films Grown by Hw-Cvd and Vhf-Pecvd Techniques
    (National Institute of Optoelectronics, 2005) Okur, Salih; Göktaş, Oktay; Güneş, Mehmet; Finger, Friedhelm; Carius, Reinhard
    Opto-electronic properties of μc-Si:H films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) and very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) techniques with various silane concentrations (SC) have been investigated using Raman spectroscopy, the steady-state photocarrier grating technique (SSPG), and the steady-state photoconductivity (SSPC). A correlation between the minority carrier transport properties and the microstructure has been found, using the dependence of the diffusion length (Ld) on the SC and Raman intensity ratio (I c RS) representing crystalline volume fractions. I C RS changes from 0.22 to 0.77. Ld increases with increasing Ic RS. It peaks around 0.5 with a maximum value of 270 nm, then decreases. Similar dependences of Ld on I C RS were obtained for films prepared by both HWCVD and VHF-PECVD. However, the grating quality factor measured on highly crystalline HWCVD films is substantially smaller than that found for VHF-PECVD films, indicating a relatively higher surface roughness present in the highly crystalline HWCVD films.
  • Conference Object
    Citation - WoS: 16
    Citation - Scopus: 17
    Instability Phenomena in Microcrystalline Silicon Films
    (National Institute of Optoelectronics, 2005) Finger, Friedhelm; Carius, Reinhard; Dylla, Thorsten; Klein, Stefan; Okur, Salih; Güneş, Mehmet
    Microcrystalline silicon (μc-Si:H) for solar cell applications is investigated with respect to the material stability upon treatment of the material in various environments, followed by annealing. The material can be separated into two groups: (i) material with high crystalline volume fractions and pronounced porosity which is susceptible to in-diffusion of atmospheric gases, which, through adsorption or oxidation affect the electronic properties and (ii) compact material with high or low crystalline volume fractions which show considerably less or no influence of treatment in atmospheric gases. We report the investigation of such effects on the stability of μc-Si:H films prepared by plasma enhanced chemical vapour deposition and hot wire chemical vapour deposition.
  • Conference Object
    Citation - WoS: 7
    Citation - Scopus: 10
    Sub-Bandgap Absorption Spectroscopy and Minority Carrier Transport Properties of Hydrogenated Microcrystalline Silicon Thin Films
    (National Institute of Optoelectronics, 2005) Güneş, Mehmet; Göktaş, Oktay; Okur, Salih; Işık, Nebile; Carius, Reinhard; Klomfaß, Josef; Finger, Friedhelm
    Hydrogenated microcrystalline silicon thin films have been prepared using HW-CVD and VHF-PECVD techniques with different silane concentrations. The steady-state photoconductivity, dual beam photoconductivity, photothermal deflection spectroscopy and steady-state photocarrier grating (SSPG) methods have been used to investigate the optical and electronic properties of the films. Two different sub-bandgap absorption methods have been applied and analyzed to obtain a better insight into the electronic states involved. For some films, differences existed in the optical absorption spectra when the measurements were carried out through the film side and through the substrate side. In addition, for some films, fringe patterns remained on the spectrum after the calculation of the fringe free absorption spectrum, which indicates that structural inhomogeneities were present throughout the film. Finally, minority carrier diffusion lengths deduced from the SSPG measurements were investigated as a function of the crystalline volume fraction (I c RS) obtained from Raman spectroscopy. The longest diffusion lengths and lowest sub-bandgap absorption coefficients were obtained for films deposited in the region of the transition to the amorphous growth.