Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 4Citation - Scopus: 4Photonic Crystal Textiles for Heat Insulation(American Institute of Physics, 2023) Çetin, Zebih; Tunçtürk, Yiğit; Sözüer, Hüseyin SamiIn this work, we have studied transmission properties of a photonic crystal-like structure that can be woven into fabrics. An interesting possibility emerges when considering the potential energy savings through suppression of radiation. It is a well-established fact that every object at a finite temperature inherently emits electromagnetic waves. Within the specific context of the human body, radiation takes on a crucial role as a fundamental mechanism governing heat dissipation. Thus, exploring ways to manage or mitigate this radiation could offer innovative approaches to optimize energy consumption and enhance heat regulation. It is well known that a photonic crystal can block electromagnetic energy with a specific frequency that is falling into a photonic bandgap. By using the numerical method called a finite-difference time domain, we have shown that this property of a periodic structure can be used to make textiles to save energy that is used to heat a human body environment. Numerical calculations have shown that by using the proposed photonic crystal structure, 53 % of electromagnetic energy is reflected. Although we mainly focused on textiles, it is worth highlighting that the same fundamental principle can be extended to diverse fields; for example, this structure can be integrated with construction materials and effectively function as a radiation heat insulator. © 2023 Author(s).Article Citation - WoS: 4Citation - Scopus: 4Graphene/Soi-based Self-Powered Schottky Barrier Photodiode Array(American Institute of Physics, 2022) Yanılmaz, Alper; Fidan, Mehmet; Ünverdi, Özhan; Çelebi, CemWe have fabricated a four-element graphene/silicon on insulator (SOI) based Schottky barrier photodiode array (PDA) and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as a common electrode on a lithographically defined linear array of n-type Si channels on a SOI substrate. As revealed by wavelength resolved photocurrent spectroscopy measurements, each element in the PDA structure exhibited a maximum spectral responsivity of around 0.1 A/W under a self-powered operational mode. Time-dependent photocurrent spectroscopy measurements showed excellent photocurrent reversibility of the device with ∼1.36 and ∼1.27 μs rise time and fall time, respectively. Each element in the array displayed an average specific detectivity of around 1.3 × 1012 Jones and a substantially small noise equivalent power of ∼0.14 pW/Hz-1/2. The study presented here is expected to offer exciting opportunities in terms of high value-added graphene/Si based PDA device applications such as multi-wavelength light measurement, level metering, high-speed photometry, and position/motion detection.Article Citation - WoS: 2Citation - Scopus: 2Room Temperature Emission From Single Defects in Wo3 Enhanced by Plasmonic Nanocrystals(American Institute of Physics, 2021) Özçeri, Elif; Polat, Nahit; Balcı, Sinan; Tarhan, EnverRoom temperature light emission from optically active defect centers in two-dimensional layered materials has attracted great interest in recent years owing to the critical applications in the field of quantum information technologies. Therefore, efficient generation, detection, characterization, and manipulation of spatially localized emission from the defect centers are of crucial importance. Here, we report localized, stable, and bright room temperature photoluminescence (PL) emission from defects in WO3. In particular, the experimentally observed polarized and power dependent PL emission shows single photon characteristics. In addition, density functional theory calculations indicate that the source of the emission is most probably oxygen vacancy defects in WO3. The PL emission obtained from the localized defect centers in WO3 at room temperature has been, further, enhanced more than 20 times by using plasmonic gold nanoparticles.Article Citation - WoS: 15Citation - Scopus: 15Ag and Au Atoms Intercalated in Bilayer Heterostructures of Transition Metal Dichalcogenides and Graphene(American Institute of Physics, 2014) İyikanat, Fadıl; Şahin, Hasan; Senger, Ramazan Tuğrul; Peeters, François M.The diffusive motion of metal nanoparticles Au and Ag on monolayer and between bilayer heterostructures of transition metal dichalcogenides and graphene are investigated in the framework of density functional theory. We found that the minimum energy barriers for diffusion and the possibility of cluster formation depend strongly on both the type of nanoparticle and the type of monolayers and bilayers. Moreover, the tendency to form clusters of Ag and Au can be tuned by creating various bilayers. Tunability of the diffusion characteristics of adatoms in van der Waals heterostructures holds promise for controllable growth of nanostructures. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.Article Citation - WoS: 8Citation - Scopus: 8Oxide Shell Layer Influences on Size-Dependent Tensile and Compressive Mechanical Properties of Iron Nanowires: a Reaxff Molecular Dynamics Study(American Institute of Physics, 2019) Aral, GürcanThe systematic understanding of an overall deformation mechanism of metallic iron (Fe) nanowires (NWs) with the pre-existing oxide shell layer (Fe/FexOy) under various mechanical loading conditions is of critical importance for their various applications. Herein, we perform molecular dynamics simulations using ReaxFF reactive interatomic potential to systematically investigate the effect of the pre-existing oxide shell layer on the underlying intrinsic mechanical deformation mechanism and related mechanical properties of metallic [001]-oriented Fe NWs under both uniaxial tension and compressive loading. Three different diameters of the NWs are investigated to elucidate the size effect. The Fe NWs with the preoxide shell layer possess unique and intriguing mechanical properties and deformation mechanisms. In particular, the oxide shell layer with the combined effect of the diameter and the applied uniaxial loading mode dictates the strength and the overall stress-strain behaviors of the NWs. Interestingly, the oxide-coated NWs clearly exhibit the diameter-dependent elastic deformation intrinsic mechanism and related properties as compared to the pristine counterparts. Specifically, the pre-existing oxide shell layer expedites the onset of tensile plasticity by drastically reducing the tensile yield stress and significantly decreasing the tensile elastic limit. Contrary to the tensile loading, the presence of the oxide shell layer reduces or increases the compressive yield stress of the pristine Fe NW with respect to its diameter. However, the pre-existing oxide shell layer leads to a significantly delayed onset of compressive plasticity, that is, a significant increase in the compressive elastic limit. Published under license by AIP Publishing.Article Citation - WoS: 8Citation - Scopus: 8Atomistic Insights on the Influence of Pre-Oxide Shell Layer and Size on the Compressive Mechanical Properties of Nickel Nanowires(American Institute of Physics, 2019) Aral, Gürcan; Islam, Md Mahbubul; Wang, Yun-Jiang; Ogata, Shigenobu; van Duin, Adri C. T.We used ReaxFF reactive molecular dynamics simulations to systematically investigate the effects of a pre-oxide shell layer on the mechanical properties of [001]-oriented nickel (Ni) nanowires (NWs) under the uniaxial compressive loading at room temperature. The pristine Ni NWs are considered as references to compare the mechanical properties of the oxide-coated NWs. We found that the mechanical properties of pristine Ni NWs under uniaxial compression are sensitive to both the diameter of the NWs and the pre-oxide shell layer, and their combined effect determines the overall stress and strain behaviors. The compressive strength of the pristine NWs decreases significantly with the decreasing diameter. We observe that the native defected amorphous pre-oxide shell layer with similar to 1.0 nm thickness leads to a lowering of the mechanical compressive resistivity of NWs and causes additional softening. Oxide-coated NWs exhibit a lesser size-dependent unique properties and a lower overall yield strength compared to their pristine counterparts. The reduction of the mechanical compressive yield stress and strain with the decreasing diameter is due to the substantial changes in plastic flow as well as correlated with the existence of the pre-oxide shell layer as compared to its pristine counterpart. Particularly, pre-oxide shell layers have pronounced effects on the initiation of initial dislocations to onset plastic deformation and consequently on the overall plastic response. Published under license by AIP Publishing.Article Citation - WoS: 9Structural, Electronic, and Magnetic Properties of Point Defects in Polyaniline (c3n) and Graphene Monolayers: a Comparative Study(American Institute of Physics, 2020) Sevim, Koray; Sevinçli, HaldunThe newly synthesized two-dimensional polyaniline (C3N) is structurally similar to graphene and has interesting electronic, magnetic, optical, and thermal properties. Motivated by the fact that point defects in graphene give rise to interesting features, like magnetization in an all carbon material, we perform density functional theory calculations to investigate vacancy and Stone-Wales type point defects in monolayer C3N. We compare and contrast the structural, electronic, and magnetic properties of these defects with those in graphene. While monovacancies and Stone-Wales defects of C3N result in reconstructions similar to those in graphene, divacancies display dissimilar geometrical features. Different from graphene, all vacancies in C3N have metallic character because of altered stoichiometry; those that have low-coordinated atoms have finite magnetic moments. We further investigate the robustness of the reconstructed structures and the changes in the magnetic moments by applying tensile and compressive biaxial strain. We find that, with the advantage of finite bandgap, point defects in C3N are qualified as good candidates for future spintronics applications.Article Citation - WoS: 4Citation - Scopus: 5Identifying Threading Dislocations in Cdte Films by Reciprocal Space Mapping and Defect Decoration Etching(American Institute of Physics, 2018) Polat, Mustafa; Bilgilisoy, Elif; Arı, Ozan; Öztürk, Orhan; Selamet, YusufWe study threading dislocation (TD) density of high-quality cadmium telluride (CdTe) layers grown on a (211) oriented GaAs substrate by molecular beam epitaxy. High-resolution X-ray diffraction was performed to calculate the density of screw-type TDs by measuring the broadening of the asymmetrical (511) Bragg reflections of CdTe epilayers. In addition, total TD densities were determined by the Everson-etching method and were compared with screw TDs. Our results show that the total TD densities in CdTe films were dominated by those with screw character. The screw component TDs are estimated to account for more than 90% of the total TD density. CdTe layers grown at a thickness of less than 3.0 μm typically exhibit the screw TD densities in the 106 cm-2 and 107 cm-2 range. It can be noted that as the nucleation temperature increases, i.e., ≥222 °C, both the area density of TDs with the screw component of the CdTe films and the total TD density are roughly four times larger than those of the epilayer grown at the nucleation temperature of 215 °C. Furthermore, we discuss the influence of the II/VI flux ratio on the density of threading dislocations. The contribution of screw TDs to the total TD density showed a significant decrease in roughly 30% in the case of a high II/VI flux ratio. We further examine the reciprocal space maps in the vicinity of the (422) reflections.Article Citation - WoS: 15Citation - Scopus: 17Effect of Substrate Rotation Speed and Off-Center Deposition on the Structural, Optical, and Electrical Properties of Azo Thin Films Fabricated by Dc Magnetron Sputtering(American Institute of Physics, 2018) Türkoğlu, Fulya; Aygün, Gülnur; Köseoğlu, Hasan; Özdemir, Mehtap; Zeybek, S.; Özyüzer, Lütfi; Özdemir, Mehtap; Özyüzer, Gülnur Aygün; Özyüzer, LütfiIn this study, aluminum-doped zinc oxide (AZO) thin films were deposited by DC magnetron sputtering at room temperature. The distance between the substrate and target axis, and substrate rotation speed were varied to get high quality AZO thin films. The influences of these deposition parameters on the structural, optical, and electrical properties of the fabricated films were investigated by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometry, and four-point probe techniques. The overall analysis revealed that both sample position and substrate rotation speed are effective in changing the optical, structural, and electrical properties of the AZO thin films. We further observed that stress in the films can be significantly reduced by off-center deposition and rotating the sample holder during the deposition. An average transmittance above 85% in the visible range and a resistivity of 2.02 × 10-3Ω cm were obtained for the AZO films.Article Citation - WoS: 11Citation - Scopus: 11The Effect of Adsorbates on the Electrical Stability of Graphene Studied by Transient Photocurrent Spectroscopy(American Institute of Physics, 2018) Kalkan, Sırrı Batuhan; Aydın, H.; Özkendir, Dicle; Çelebi, CemAdsorbate induced variations in the electrical conductivity of graphene layers with two different types of charge carriers are investigated by using the Transient Photocurrent Spectroscopy (TPS) measurement technique. In-vacuum TPS measurements taken for a duration of 5 ks revealed that the adsorption/desorption of atmospheric adsorbates leads to more than a 110% increment and a 45% decrement in the conductivity of epitaxial graphene (n-type) and chemical vapor deposition graphene (p-type) layers on semi-insulating silicon carbide (SiC) substrates, respectively. The graphene layers on SiC are encapsulated and passivated with a thin SiO2 film grown by the Pulsed Electron Deposition method. The measurements conducted for short periods and a few cycles showed that the encapsulation process completely suppresses the time dependent conductivity instability of graphene independent of its charge carrier type. The obtained results are used to construct an experimental model for identifying adsorbate related conductivity variations in graphene and also in other 2D materials with an inherently high surface-to-volume ratio.
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