Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
Browse
47 results
Search Results
Article Citation - WoS: 315Citation - Scopus: 301Transverse-Momentum and Pseudorapidity Distributions of Charged Hadrons in Pp Collisions at Root √s=0.9 and 2.36 Tev(Springer Verlag, 2010) Karapınar, Güler; Demir, Durmuş AliMeasurements of inclusive charged-hadron transverse-momentum and pseudorapidity distributions are presented for proton-proton collisions at root s = 0.9 and 2.36 TeV. The data were collected with the CMS detector during the LHC commissioning in December 2009. For non-single-diffractive interactions, the average charged-hadron transverse momentum is measured to be 0.46 +/- 0.01 (stat.) +/- 0.01 (syst.) GeV/c at 0.9 TeV and 0.50 +/- 0.01 (stat.) +/- 0.01 (syst.) GeV/c at 2.36 TeV, for pseudorapidities between -2.4 and +2.4. At these energies, the measured pseudorapidity densities in the central region, dN(ch)/d eta vertical bar(vertical bar eta vertical bar<0.5), are 3.48 +/- 0.02 (stat.) +/- 0.13 (syst.) and 4.47 +/- 0.04 (stat.) +/- 0.16 (syst.), respectively. The results at 0.9 TeV are in agreement with previous measurements and confirm the expectation of near equal hadron production in p<(p)over bar> and pp collisions. The results at 2.36 TeV represent the highest-energy measurements at a particle collider to date.Article Evaluation of exact quantum query complexities by semidefinite programming(Springer Verlag, 2019) Uyanık, KıvançOne of the difficult tasks in quantum computation is inventing efficient exact quantum algorithms, which are the quantum algorithms that output the correct answer with certainty on any input. We improve and generalize the semidefinite programming (SDP) method of Montanaro et al. (Algorithmica 71:775-796, 2015) in order to evaluate exact quantum query complexities of partial functions. We present a more systematical approach to achieve the inspired result by Montanaro et al. for the function EXACT24, which is the Boolean function of 4 bits that output only when 2 of the input bits are equal to 1. The same approach also allows us to reduce the size of the ancilla space used by the algorithms that evaluate symmetric functions like EXACT36. We employ the generalized SDP to verify the complexities of the earliest and best known quantum algorithms in the literature, namely, Deutsch-Jozsa and Grover algorithms for a small number of input bits. We utilized the method to solve the weight decision problem of bit strings with lengths up to 10 bits and observed that the generalized SDP gives better exact quantum query complexities than the known methods. Finally, we test the method on some selected functions and demonstrate that they all exhibit quantum speedup.Article Citation - WoS: 56Citation - Scopus: 62Cross-like terahertz metamaterial absorber for sensing applications(Springer Verlag, 2018) Sabah, Cumali; Mulla, Batuhan; Altan, Hakan; Özyüzer, LütfiIn this work, a new multiband terahertz metamaterial absorber is designed and characterised by numerical simulation method. In addition, the utilisation of the proposed absorber as a sensor is also investigated. The dielectric and thickness sensing characteristics are analysed. The proposed multiband metamaterial absorber has the ability for utilising the terahertz region up to 2 THz. According to the results, it is found that the proposed absorber is capable of sensing unknown materials and material thickness with any of its five absorption bands. The sensitivity of the proposed sensor is 6.57 GHz / unit sensitivity for dielectric sensing and 7.66GHz/μm for thickness sensing.Article Citation - WoS: 16Citation - Scopus: 18Study of Undoped and Indium Doped Zno Thin Films Deposited by Sol Gel Method(Springer Verlag, 2018) Medjaldi, M.; Touil, O.; Boudine, B.; Zaabat, M.; Halimi, O.; Sebais, M.; Özyüzer, LütfiIn this paper, we report the effects of Indium doping concentrations (from 0 to 10wt%) on the structural, morphological, and optical properties of deposited In doped ZnO (IZO) thin films prepared by the sol–gel method through the dip coating technique. X-ray diffraction (XRD) analysis indicates that all ZnO thin films have a polycrystalline nature with a hexagonal wurtzite phase with (002) as a preferential orientation. XRD results demonstrate that the particle size of ZnO decreased with the increase in Indium concentrations. Raman scattering spectra confirmed the wurtzite phase and the presence of intrinsic defects in our samples. Energy dispersive spectroscopy (EDS) and the X-ray photoelectron spectroscopy (XPS) measurements, confirmed the presence of zinc, oxygen and indium elements which is in agreement with XPS results. The photoluminescence (PL) spectra of the films exhibit defects-related visible emission peaks, with intensities differing owing to different concentrations of zinc vacancies. UV–Vis spectrometer measurements show that all the films are highly transparent in the visible wavelength region (≥ 70%) and presented two different absorption edges at about 3.21 eV and 3.7 eV, these may be correspond to the band gap of zinc oxide and indium oxide respectively.Article Citation - WoS: 10Citation - Scopus: 10The Influence of Plasma-Based Nitriding and Oxidizing Treatments on the Mechanical and Corrosion Properties of Cocrmo Biomedical Alloy(Springer Verlag, 2018) Noli, Fotini; Pichon, Luc; Öztürk, OrhanPlasma-based nitriding and/or oxidizing treatments were applied to CoCrMo alloy to improve its surface mechanical properties and corrosion resistance for biomedical applications. Three treatments were performed. A set of CoCrMo samples has been subjected to nitriding at moderate temperatures (~ 400 °C). A second set of CoCrMo samples was oxidized at 395 °C in pure O2. The last set of CoCrMo samples was nitrided and subsequently oxidized under the experimental conditions of previous sets (double treatment). The microstructure and morphology of the layers formed on the CoCrMo alloy were investigated by X-ray diffraction, Atomic Force Microscopy, and Scanning Electron Microscopy. In addition, nitrogen and oxygen profiles were determined by Glow Discharge Optical Emission Spectroscopy, Rutherford Backscattering Spectroscopy, Energy-Dispersive X-ray, and Nuclear Reaction Analysis. Significant improvement of the Vickers hardness of the CoCrMo samples after plasma nitriding was observed due to the supersaturated nitrogen solution and the formation of an expanded FCC γN phase and CrN precipitates. In the case of the oxidized samples, Vickers hardness improvement was minimal. The corrosion behavior of the samples was investigated in simulated body fluid (0.9 pct NaCl solution at 37 °C) using electrochemical techniques (potentiodynamic polarization and cyclic voltammetry). The concentration of metal ions released from the CoCrMo surfaces was determined by Instrumental Neutron Activation Analysis. The experimental results clearly indicate that the CoCrMo surface subjected to the double surface treatment consisting in plasma nitriding and plasma oxidizing exhibited lower deterioration and better resistance to corrosion compared to the nitrided, oxidized, and untreated samples. This enhancement is believed to be due to the formation of a thicker and more stable layer.Article S- and T-Self in Dilatonic F(r) Theories(Springer Verlag, 2017) Rador, TonguçWe search for theories, in general spacetime dimensions, that would incorporate a dilaton and higher powers of the scalar Ricci curvature such that they have exact S- or T-self-dualities. The theories we find are free of Ostrogradsky instabilities. We also show that within the framework we are confining ourselves, a theory of the form mentioned above cannot have both T- and S-dualities except for the case where the action is linear in the scalar curvature.Article Citation - WoS: 2Citation - Scopus: 2Electronic Structure of Cyanocobalamin: Dft+qmc Study(Springer Verlag, 2017) Mayda, Selma; Kandemir, Zafer; Bulut, NejatWe study the electronic structure and the magnetic correlations of cyanocobalamin (C63H88CoN14O14P) by using the framework of the multi-orbital single-impurity Haldane-Anderson model of a transition metal impurity in a semiconductor host. Here, we first determine the parameters of the Anderson Hamiltonian by performing density functional theory (DFT) calculations. Then, we use the quantum Monte Carlo (QMC) technique to obtain the electronic structure and the magnetic correlation functions for this effective model. We find that new electronic states, which correspond to impurity bound states, form above the lowest unoccupied level of the host semiconductor. These new states derive from the atomic orbitals at the cobalt site and the rest of the molecule. We observe that magnetic moments develop at the Co(3dν) orbitals and over the surrounding sites. We also observe that antiferromagnetic correlations exist between the Co (3dν) orbitals and the surrounding atoms. These antiferromagnetic correlations depend on the filling of the impurity bound states.Article Citation - WoS: 4Citation - Scopus: 4Hidden Spin-3/2 Field in the Standard Model(Springer Verlag, 2017) Demir, Durmuş Ali; Karahan, Canan; Korutlu, Beste; Sargın, OzanHere we show that a massive spin-3/2 field can hide in the SM spectrum in a way revealing itself only virtually. We study collider signatures and loop effects of this field, and determine its role in Higgs inflation and its potential as dark matter. We show that this spin-3/2 field has a rich linear collider phenomenology and motivates consideration of a neutrino–Higgs collider. We also show that the study of Higgs inflation, dark matter and dark energy can reveal more about the neutrino and dark sector. © 2017, The Author(s).Article Fabrication of Bi2212 Single Crystal Bolometer for Detection of Terahertz Waves(Springer Verlag, 2017) Semerci, Tuğçe; Demirhan, Yasemin; Miyakawa, Nobuaki; Wang, Huabing; Özyüzer, LütfiTerahertz (THz) radiation is in powerful region of electromagnetic spectrum because of prosperous application areas yet deficiency still exists about sources and detectors in despite of improvements of the research field in this range. This gap can be filled by focusing on development of THz detectors. Therefore, bolometers were preferred through many detectors due to detection sensitivity above 1 THz. In this study, Bi2Sr2CaCu2O8+δ (Bi2212) single crystals were used to fabricate THz bolometric detector. Bi2212 single crystals were transferred on sapphire substrate by cleavage process and e-beam lithography and ion beam etching were used to fabricate the microchip clean room facilities. Customdesigned cryogenic cryostat was used for a-b axis electrical and THz response measurements with liquid nitrogen cooled system. After electrical measurements, Bi2212 microchips detected the signals using Stefan-Boltzmann Lamp and response time were calculated. This study have shown with our experimental results that Bi2212 single crystals are potential candidates for THz bolometric detectors.Article Citation - WoS: 7Citation - Scopus: 7Comparative Study of Annealing and Gold Dopant Effect on Dc Sputtered Vanadium Oxide Films for Bolometer Applications(Springer Verlag, 2017) Alaboz, Hakan; Demirhan, Yasemin; Yüce, Hürriyet; Aygün, Gülnur; Özyüzer, LütfiVanadium oxide (VOx) thin film has been widely used for IR detectors and it is one of the promising materials for THz detectors due to its high temperature coefficient of resistance (TCR) values. VOx films with proper TCR values have also high resistance and it restricts bolometer performance especially for uncooled bolometers. To overcome this problem, deposition at elevated temperatures or annealing approach has been accepted and used but gold co-deposition approach has been proposed recently. In this study, vanadium oxide films were fabricated on high resistivity silicon substrates by reactive direct current magnetron sputtering in different O2/Ar atmosphere at room temperature. We investigated influence of oxygen partial pressure during deposition process and fabricated VOx thin films with sufficient TCR values for bolometer applications. In order to decrease resistivity of the deposited films, post annealing and gold doping approaches were performed separately. Effect of both post annealing process and gold doping process on structural and electrical properties of VOx thin films deposited at room temperature were investigated and detailed comparison between these methods were presented. We obtained the best possible approach to obtain optimum conditions for the highly reproducible VOx thin films which have the best resistivity and suitable TCR value for bolometer applications.