Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Start date: 2020Publisher: search.filters.publisher.Elsevier Ltd.

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  • Article
    Citation - WoS: 8
    Citation - Scopus: 8
    Study of Boron Doped Amorphous Silicon Lightly Hydrogenated Prepared by Dc Magnetron Sputtering for Infrared Detectors Applications
    (Elsevier Ltd., 2020) Ketroussi, K.; Cherfi, R.; Yahia, Seba, H.; Tata, S.; Chabane, L.; Özyüzer, Lütfi; Rahal, A.
    The objective of this study is to investigate the effect of boron doping concentration on the bolometric properties of lightly hydrogenated amorphous silicon doped with boron (a-Si: H(B)) films. Thin film a-Si: H(B) samples with different boron concentrations are prepared by co-sputtering of boron and silicon at relatively low hydrogen pressure. FTIR analyses show that the intensity of the characteristic peak of the substitutional boron gradually increases with the addition of boron. Increasing in boron concentration affects the bolometric properties of the lightly hydrogenated a-Si: H (B) films, including conductivity at room temperature (?RT) and thermal resistance coefficient (TCR). Indeed, when the boron concentration increases from 1.5 to 43%, ?RT increases from 1.4 10?6 to 2 10?3 ??1 cm?1 while the absolute value of TCR decreases from 3% to 8% K?1, respectively. In addition, lightly hydrogenated a-Si: H (B) films exhibit good thermal stability. We have showed in this study that lightly hydrogenated a-Si: H(B) can be considered as a potential candidate for low-cost, high-performance uncooled micro bolometers. © 2020 Elsevier B.V.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 4
    Lipid Bilayer on Wrinkled-Interfaced Graphene Field Effect Transistor
    (Elsevier Ltd., 2021) Özkendir İnanç, Dilce; Çelebi, Cem; Yıldız, Ümit Hakan
    This study describes lipid bilayer-based sensor interface on SiO2 encapsulated graphene field effect transistors (GFET). The SiO2 layer was utilized as a lipid compatible surface that drives bilayer formation. The two types of surface morphologies i) wrinkled morphology by thermal evaporation (TE) and ii) flat morphology by pulsed electron deposition (PED) were obtained. The sensing performance of wrinkled and flat interfaced-GFETs were investigated, pH sensitivity of wrinkled interfaced-GFETs were found to be ten fold larger than the flat ones. The enhanced sensitivity is attributed to thinning of the oxide layer by formation of wrinkles thereby facilitating electrostatic gating on graphene. We foresee that described wrinkled SiO2 interfaced-GFET holds promise as a cell membrane mimicking sensing platform for novel bioelectronic applications. © 2020