Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Department: search.filters.department.İzmir Institute of Technology. PhotonicsPublisher: search.filters.publisher.American Chemical Society

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Now showing 1 - 2 of 2
  • Article
    Citation - WoS: 15
    Citation - Scopus: 15
    Vertical van der waals heterostructure of single layer InSe and SiGe
    (American Chemical Society, 2019) Eren, İsmail; Şahin, Hasan; Özen, Sercan; Yağmurcukardeş, Mehmet; Sözen, Yiğit; Eren, İsmail; Yağmurcukardeş, Mehmet; Sözen, Yiğit; Şahin, Hasan; 04.05. Department of Pyhsics; 04.04. Department of Photonics; 01. Izmir Institute of Technology; 04. Faculty of Science
    We present a first-principles investigation on the stability, electronic structure, and mechanical response of ultrathin heterostructures composed of single layers of InSe and SiGe. First, by performing total energy optimization and phonon calculations, we show that single layers of InSe and SiGe can form dynamically stable heterostructures in 12 different stacking types. Valence and conduction band edges of the heterobilayers form a type-I heterojunction having a tiny band gap ranging between 0.09 and 0.48 eV. Calculations on elastic-stiffness tensor reveal that two mechanically soft single layers form a heterostructure which is stiffer than the constituent layers because of relatively strong interlayer interaction. Moreover, phonon analysis shows that the bilayer heterostructure has highly Raman active modes at 205.3 and 43.7 cm(-1), stemming from the out-of-plane interlayer mode and layer breathing mode, respectively. Our results show that, as a stable type-I heterojunction, ultrathin heterobilayer of InSe/SiGe holds promise for nanoscale device applications.
  • Article
    Citation - WoS: 17
    Citation - Scopus: 17
    Monitoring the Doping and Diffusion Characteristics of Mn Dopants in Cesium Lead Halide Perovskites
    (American Chemical Society, 2018) Güner, Tuğrul; Şahin, Hasan; Akbalı, Barış; Demir, Mustafa Muammer; Özcan, Mehmet; Topçu, Gökhan; Demir, Mustafa Muammer; Şahin, Hasan; 04.04. Department of Photonics; 03.09. Department of Materials Science and Engineering; 03. Faculty of Engineering; 04. Faculty of Science; 01. Izmir Institute of Technology
    Cesium lead perovskites, in the form of CsPbX3 or Cs4PbX6, have been widely used for various optoelectronic applications due to their exceptionally good optical properties. In this study, the effect of Mn doping on the structural and optical properties of cesium lead halide perovskite crystals are investigated from both experimental and theoretical points of view. It is found that adding MnCl2 during the synthesis not only leads to a Mn-driven structural phase transition from Cs4PbBr6 to CsPbCl3 but also triggers the Br- to Cl- halide exchange. On the other hand, it is observed that, under UV illumination, the color of Mn-doped crystals changes from orange to blue in approximately 195 h. While the intensity of Mn-originated photoluminescence emission exponentially decays in time, the intensity of CsPbCl3-originated emission remains unchanged. In addition, diffusive motion of Mn ions results in both a growing population of MnO2 at the surface and transition of the host into a cesium-rich Cs4PbCl6 phase.