Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Conference Object Citation - WoS: 1Selection of the Best Proper Dc-Squids in a Multi-Squid Configuration(IEEE, 2007) Avcı, İlbeyi; Akram, R.; Abukay, Doğan; Tepe, Mustafa; Abukay, Doğan; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyWe have carried out experimental investigation of multi-DC-SQUID magnetometer configuration fabricated on YBa2Cu30 7-δ thin films onto 24 degree SrTiO3 bicrystal substrates by directly coupling the pick-up loop to DC-SQUIDs. The layout of the magnetometer pick-up loop was chosen as a square washer configuration by maximizing loop effective area and minimizing loop inductance. We have used De-Magnetron Sputtering technique for deposition of the films and chemical etching process for patterning the Josephson junctions having 4 μm widths. The use of multi-SQUID configuration is related to the selection of the best proper junctions for SQUID to improve the chip sensitivity with selectivity option of choosing the squid junctions rather than multichannel operation. Selection of the best junctions compared to each other depending on the junction critical currents and noise levels caused by the fabrication process and placements of the junctions on the grain boundary enable having an increased output signal of the DC-SQUID.Article Developing a Trilayer Processing Technique for Superconducting Yba 2cu3o7-? Thin Films by Using Ge Ion Implantation(IOP Publishing Ltd., 2005) Avcı, İlbeyi; Tepe, Mustafa; Abukay, Doğan; Serincan, Uğur; Turan, Raşit; Abukay, Doğan; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyFor making trilayer superconducting devices based on YBa2Cu 3O7-δ (YBCO) thin film processing, we developed a new technique by employing Ge ion implantation. A YBCO thin film of 150 nm thickness having high c-axis orientation and a transition temperature, T c, of 90 K was implanted with 80 keV, 1 × 1016 Ge ions cm-2 at room temperature. By the result of TRIM calculation, Ge ions were found to penetrate into the YBCO thin film approximately 60 nm below the surface of the film, thus leaving the lower part of the film as a superconductor. Upon implantation with Ge ions, the implanted upper part of the sample lost its electrical conductivity and diamagnetism while its original crystalline structure was preserved. The implanted ions we found did not alter the overall crystal structure of the YBCO thin film; this allowed us to grow an epitaxial superconducting upper layer of YBCO on top of the implanted area, leaving no need to use any buffer layer. The superconducting properties of the upper layer were similar to those of the pure YBCO base layer with an increased room temperature resistivity and a lowered Tc (88 K). This process provides an effective method for fabrication of a trilayer HTS device structure.