Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Institution Author: search.filters.institutionAuthor.Köseoğlu, HasanSubject: search.filters.subject.Energy gap

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  • Article
    Citation - WoS: 60
    Citation - Scopus: 64
    Improvement of Optical and Electrical Properties of Ito Thin Films by Electro-Annealing
    (Elsevier Ltd., 2015) Köseoğlu, Hasan; Türkoğlu, Fulya; Kurt, Metin; Yaman, Mutlu Devran; Akça, Fatime Gülşah; Aygün, Gülnur; Özyüzer, Lütfi
    The effect of electro-annealing in vacuum and air on the optical and electrical properties of ITO thin films grown by large area DC magnetron sputtering was investigated. Moreover, the performances of the electro-annealed ITO thin films in vacuum and air were compared. Electro-annealing was performed by applying 0.75, 1.00, 1.25 and 1.50 A constant ac current to the ITO thin films. It was observed that the crystallinity of the films was better for the ITO thin films electro-annealed in vacuum. The changes in sheet resistance of electro-annealed ITO thin films with applied currents were detailed. The transmittance of the films increased for both electro-annealing in vacuum and air. A correlation between band-gap and resistivity for all of the electro-annealed thin films was observed.