Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Institution Author: search.filters.institutionAuthor.Kandemir, AliPublication Index: search.filters.publicationIndex.PubMed

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Now showing 1 - 4 of 4
  • Article
    Citation - WoS: 7
    Citation - Scopus: 8
    Hydrogenation-driven phase transition in single-layer TiSe2
    (IOP Publishing Ltd., 2017) İyikanat, Fadıl; Kandemir, Ali; Özaydın, H. Duygu; Senger, Ramazan Tuğrul; Şahin, Hasan
    First-principles calculations based on density-functional theory are used to investigate the effects of hydrogenation on the structural, vibrational, thermal and electronic properties of the charge density wave (CDW) phase of single-layer TiSe2. It is found that hydrogenation of single-layer TiSe2 is possible through adsorption of a H atom on each Se site. Our total energy and phonon calculations reveal that a structural phase transition occurs from the CDW phase to the T d phase upon full hydrogenation. Fully hydrogenated TiSe2 presents a direct gap semiconducting behavior with a band gap of 119 meV. Full hydrogenation also leads to a significant decrease in the heat capacity of single-layer TiSe2.
  • Article
    Citation - WoS: 8
    Citation - Scopus: 10
    Stability, Electronic and Phononic Properties of Ss and 1t Structures of Sitex (x = 1, 2) and Their Vertical Heterostructures
    (IOP Publishing Ltd., 2017) Kandemir, Ali; İyikanat, Fadıl; Şahin, Hasan
    By performing first-principles calculations, we predict a novel, stable single layer phase of silicon ditelluride, 1T-SiTe2, and its possible vertical heterostructures with single layer β-SiTe. Structural optimization and phonon calculations reveal that 1T-SiTe2 structure has a dynamically stable ground state. Further analysis of the vibrational spectrum at the - point shows that single layer 1T-SiTe2 has characteristic phonon modes at 80, 149, 191 and 294 cm-1. Electronic-band structure demonstrates that 1T-SiTe2 phase exhibits a nonmagnetic metallic ground state with a negligible intrinsic spinorbit splitting. Moreover, it is shown that similar structural parameters of 1T-SiTe2 and existing β-SiTe phases allows construction of 1T-β heterostructures with a negligible lattice mismatch. In this regard, it is found that two energetically favorable stacking orders, namely AA and ATB, have distinctive shear and layer breathing phonon modes. It is important to note that the combination of semiconducting β-SiTe and metallic 1T-SiTe2 building blocks forms ultra-thin Schottky barriers that can be used in nanoscale optoelectronic device technologies.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 2
    ?-Silicene as Oxidation-Resistant Ultra-Thin Coating Material
    (Beilstein-Institut Zur Forderung der Chemischen Wissenschaften, 2017) Kandemir, Ali; İyikanat, Fadıl; Bacaksız, Cihan; Şahin, Hasan
    By performing density functional theory (DFT)-based calculations, the performance of a-silicene as oxidation-resistant coating on Ag(111) surface is investigated. First of all, it is shown that the Ag(111) surface is quite reactive against O atoms and O2 molecules. It is known that when single-layer silicene is formed on the Ag(111) surface, the 3 × 3-reconstructed phase, a-silicene, is the ground state. Our investigation reveals that as a coating layer, a-silicene (i) strongly absorbs single O atoms and (ii) absorbs O2 molecules by breaking the strong O-O bond. (iii) Even the hollow sites, which are found to be most favorable penetration path for oxygens, serves as high-energy oxidation barrier, and (iv) α-silicene becomes more protective and less permeable in the presence of absorbed O atom. It appears that single-layer silicene is a quite promising material for ultra-thin oxidation-protective coating applications.
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Adsorption and Diffusion Characteristics of Lithium on Hydrogenated ?- and Ss-Silicene
    (Beilstein-Institut Zur Forderung der Chemischen Wissenschaften, 2017) İyikanat, Fadıl; Kandemir, Ali; Bacaksız, Cihan; Şahin, Hasan
    Using first-principles density functional theory calculations, we investigate adsorption properties and the diffusion mechanism of a Li atom on hydrogenated single-layer α- and β-silicene on a Ag(111) surface. It is found that a Li atom binds strongly on the surfaces of both α- and β-silicene, and it forms an ionic bond through the transfer of charge from the adsorbed atom to the surface. The binding energies of a Li atom on these surfaces are very similar. However, the diffusion barrier of a Li atom on H-α-Si is much higher than that on H-β-Si. The energy surface calculations show that a Li atom does not prefer to bind in the vicinity of the hydrogenated upper-Si atoms. Strong interaction between Li atoms and hydrogenated silicene phases and low diffusion barriers show that α- and β-silicene are promising platforms for Li-storage applications.