Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Language: search.filters.language.enSubject: search.filters.subject.Nitrogen plasma

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  • Article
    Citation - WoS: 54
    Citation - Scopus: 53
    Nitrogen Doping for Facile and Effective Modification of Graphene Surfaces
    (Royal Society of Chemistry, 2017) Yanılmaz, Alper; Tomak, Aysel; Selamet, Yusuf; Bacaksız, Cihan; Özçeri, Elif; Arı, Ozan; Senger, Ramazan Tuğrul; Selamet, Yusuf; Tomak, Aysel; Senger, Ramazan Tuğrul; 03.01. Department of Bioengineering; 01. Izmir Institute of Technology; 04.05. Department of Pyhsics; 03. Faculty of Engineering; 04. Faculty of Science
    We report experimental and theoretical investigations of nitrogen doped graphene. A low-pressure Chemical Vapor Deposition (CVD) system was used to grow large-area graphene on copper foil, using ethylene as the carbon source. Nitrogen-doped graphene (N-graphene) was prepared by exposing the graphene transferred to different substrates to atomic nitrogen plasma. The effect of varying nitrogen flow rates on doping of graphene was investigated while keeping the power and time constant during the process. The N-graphene was characterized via Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Scanning Tunneling Microscopy and Spectroscopy (STM and STS), and Fourier Transform Infrared spectroscopy (FTIR). Raman mapping of N-graphene was also performed to show homogeneity of nitrogen on the graphitic lattice. XPS results have revealed the presence of different nitrogen configurations in the graphitic lattice with similar doping concentrations. Density functional theory (DFT) based calculations showed that the periodic adsorption of N atoms predominantly occurs on top of the C atoms rather than through substitution of C in our N-graphene samples. Our results indicate a feasible procedure for producing N-graphene with homogenous and effective doping which would be valuable in electronic and optical applications.
  • Article
    Citation - WoS: 26
    Citation - Scopus: 24
    Cocrmo Alloy Treated by Floating Potential Plasma Assisted Nitriding and Plasma Based Ion Implantation: Influence of the Hydrogen Content and of the Ion Energy on the Nitrogen Incorporation
    (Elsevier Ltd., 2010) Pichon, L.; Okur, Salih; Öztürk, Orhan; Okur, Salih; Drouet, M.; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    Nitriding was performed on a medical grade CoCrMo alloy at 400°C in N2 or N2-H2 atmosphere at a working pressure of 0.84Pa for 2h. Various surface treatment techniques were used to incorporate nitrogen into the CoCrMo alloy: without any plasma assistance, by floating potential radio-frequency plasma assisted nitriding (FPPAN), by plasma based ion implantation (PBII) with several high voltage accelerations (up to 20kV). Without plasma activation, no nitrogen is incorporated in the CoCrMo. On the contrary, all the plasma or PBII treated samples show the formation of a nitrogen-rich f.c.c. γN phase. The layer nitrided over few microns has a nitrogen composition ranging from 30at.% to about 20at.% near the nitrided layer-substrate interface, with an enhanced surface microhardness. Hydrogen is found to enhance the nitriding efficiency. Without hydrogen, a high voltage polarization provides a supplementary amount of implanted nitrogen available for further diffusion and the sputtering of the surface passive oxide. So, with limited high voltages, thicker layers with higher amounts of nitrogen can be achieved by PBII compared to plasma nitriding. However, with higher voltages, the sputtering becomes too important and the nitride layer is thinner. © 2010 Elsevier B.V.