Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 4Citation - Scopus: 5Enhanced Optoelectronic Properties of Magnetron Sputtered Ito/Ag Multilayers by Electro-Annealing(AVS, 2022) Uyanık, Zemzem; Türkoğlu, Fulya; Köseoğlu, Hasan; Ekmekçioğlu, Merve; Ata, Bengü; Demirhan, Yasemin; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, LütfiIndium tin oxide/silver/indium tin oxide (ITO/Ag/ITO) multilayers have attracted much attention to fulfill the growing need for high-performance transparent conducting oxide electrodes. To make these transparent multilayers work better, electro-annealing, which is a method of self-heating by electric current, can be effective. Moreover, the effect of current on ITO/Ag/ITO multilayers should be investigated to make sure that electronic devices will be reliable over their lifetime. In this study, ITO/Ag/ITO multilayer electrodes with varying Ag thicknesses were grown by DC magnetron sputtering at room temperature. Structural, optical, and electrical properties of these multilayers were investigated before and after electro-annealing. Measurement results revealed that improved optical transmittance and sheet resistance can be obtained by the optimization of Ag thickness for the as-grown ITO/Ag/ITO layers. The highest figure of merit (FoM) value of 17.37 × 10−3 Ω−1 with optical transmittance of 85.15% in the visible region and sheet resistance of 11.54 Ω/□ was obtained for the Ag thickness of 16.5 nm for as-grown samples. The electro-annealing of as-grown ITO/Ag/ITO multilayers led to improved optical behavior of the multilayer structure over a wide spectral range, especially in the near-infrared range. Electro-annealing also provided an improvement in the crystallinity and sheet resistance of the electrodes. The improvement of the electrical and optical properties of the structure enabled a FoM of 23.07 × 10−3 Ω−1 with the optical transmittance of 86.80% in the visible region and sheet resistance of 10.52 Ω/□. The findings of this work provide proper knowledge of the properties of ITO/Ag/ITO multilayers under electrical current and suggest that the overall performance of the multilayers can be improved by the electro-annealing process.Article Citation - WoS: 1Citation - Scopus: 1Electrical and Magnetic Properties of Si Ion Implanted Yba 2cu3o7-? Thin Films and Microbridges(Elsevier Ltd., 2004) Avcı, İlbeyi; Tepe, Mustafa; Serincan, Uğur; Öktem, Bülent; Turan, Raşit; Abukay, DoğanFabrication of superconducting bilayer YBa2Cu3O 7-δ (YBCO) thin film structure by Si ion implantation and properties of microbridge patterned on that are presented. YBCO thin film of 150 nm thickness was grown on single crystal (100) SrTiO3 substrate by inverted cylindrical magnetron sputtering. The sample was implanted with 100 keV, 1×1016 Si ions/cm2. Upon implantation with Si, the sample lost its electrical conductivity and diamagnetism while its crystalline structure was preserved after the annealing of the sample. The implanted ions do not alter the overall crystal structure of high temperature superconductor film. This allows the growth of epitaxial superconducting second layer YBCO film on top of the implanted area without using any buffer layer, thus providing an effective method of fabricating multilayer structures. The second layer film and the microbridge patterned by laser writing technique, showed the superconducting properties similar to those of pure YBCO base layer with a reduced critical current density.