Physics / Fizik
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Article Citation - WoS: 88Citation - Scopus: 93Nanoribbons: From Fundamentals To State-Of Applications(American Institute of Physics, 2016) Yağmurcukardeş, Mehmet; Peeters, François M.; Senger, Ramazan Tuğrul; Şahin, HasanAtomically thin nanoribbons (NRs) have been at the forefront of materials science and nanoelectronics in recent years. State-of-the-art research on nanoscale materials has revealed that electronic, magnetic, phononic, and optical properties may differ dramatically when their one-dimensional forms are synthesized. The present article aims to review the recent advances in synthesis techniques and theoretical studies on NRs. The structure of the review is organized as follows: After a brief introduction to low dimensional materials, we review different experimental techniques for the synthesis of graphene nanoribbons (GNRs) with their advantages and disadvantages. In addition, theoretical investigations on width and edge-shape-dependent electronic and magnetic properties, functionalization effects, and quantum transport properties of GNRs are reviewed. We then devote time to the NRs of the transition metal dichalcogenides (TMDs) family. First, various synthesis techniques, E-field-tunable electronic and magnetic properties, and edge-dependent thermoelectric performance of NRs of MoS2 and WS2 are discussed. Then, strongly anisotropic properties, growth-dependent morphology, and the weakly width-dependent bandgap of ReS2 NRs are summarized. Next we discuss TMDs having a T-phase morphology such as TiSe2 and stable single layer NRs of mono-chalcogenides. Strong edge-type dependence on characteristics of GaS NRs, width-dependent Seebeck coefficient of SnSe NRs, and experimental analysis on the stability of ZnSe NRs are reviewed. We then focus on the most recently emerging NRs belonging to the class of transition metal trichalcogenides which provide ultra-high electron mobility and highly anisotropic quasi-1D properties. In addition, width-, edge-shape-, and functionalization-dependent electronic and mechanical properties of blackphosphorus, a monoatomic anisotropic material, and studies on NRs of group IV elements (silicene, germanene, and stanene) are reviewed. Observation of substrate-independent quantum well states, edge and width dependent properties, the topological phase of silicene NRs are reviewed. In addition, H2 concentration-dependent transport properties and anisotropic dielectric function of GeNRs and electric field and strain sensitive I-V characteristics of SnNRs are reviewed. We review both experimental and theoretical studies on the NRs of group III-V compounds. While defect and N-termination dependent conductance are highlighted for boron nitride NRs, aluminum nitride NRs are of importance due to their dangling bond, electric field, and strain dependent electronic and magnetic properties. Finally, superlattice structure of NRs of GaN/AlN, Si/Ge, G/BN, and MoS2/WS2 is reviewed.Article Citation - WoS: 15Citation - Scopus: 13Impact of temperature increments on tunneling barrier height and effective electron mass for plasma nitrided thin Sio2 layer on a large wafer area(American Institute of Physics, 2010) Aygün, Gülnur; Roeder, G.; Erlbacher, T.; Wolf, M.; Schellenberger, M.; Pfitzner, L.Thermally grown SiO2 layers were treated by a plasma nitridation process realized in a vertical furnace. The combination of a pulsed-low frequency plasma and a microwave remote plasma with N2/NH 3/He feed gas mixture was used to nitride the thermally grown SiO2 gate dielectrics of MIS structures. Temperature dependency of effective masses and the barrier heights for electrons in pure thermally grown SiO2 as well as plasma nitrided SiO2 in high electric field by means of Fowler-Nordheim regime was determined. It is frequently seen from the literature that either effective electron mass or barrier height (generally effective electron mass) is assumed to be a constant and, as a result, the second parameter is calculated under the chosen assumption. However, in contrast to general attitude of previous studies, this work does not make any such assumptions for the calculation of neither of these two important parameters of an oxide at temperature ranges from 23 to 110 °C for SiO 2, and 23 to 130 °C for nitrided oxide. It is also shown here that both parameters are affected from the temperature changes; respectively, the barrier height decreases while the effective mass increases as a result of elevated temperature in both pure SiO2 and plasma nitrided SiO 2. Therefore, one parameter could be miscalculated if the other parameter, i.e., effective mass of electron, was assumed to be a constant with respect to variable physical conditions like changing temperature. Additionally, the barrier heights were calculated just by taking constant effective masses for both types of oxides to be able to compare our results to common literature values. © 2010 American Institute of Physics.