Physics / Fizik

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  • Article
    A Quantitative Description of Barite Thermodynamics, Nucleation and Growth for Reactive Transport Modelling
    (Elsevier, 2024) Dideriksen,K.; Zhen-Wu,B.Y.; Dobberschütz,S.; Rodríguez-Blanco,J.D.; Raahauge,P.J.; Ataman, Evren; Stipp,S.L.S.
    The regression of available thermodynamic data in the BaSO4–NaCl–H2O system yielded Pitzer ion interaction parameters that accurately describe the activities of aqueous species and mineral solubilities in this system. This thermodynamics description is compared with published Pitzer parameter sets, and combined with a model for the kinetics of barite nucleation and growth, based on classical nucleation theory. Both the thermodynamic and nucleation/growth models have been incorporated into the PHREEQC computer code to facilitate calculation of the extent and consequences of barite formation in natural and engineered systems. Results of geochemical modelling calculations agree adequately with the amount of barite scale thicknesses derived from calliper measurements from an oil well if the effective surface free energy of barite nuclei is assumed to be ∼50 mJ m−2. Better results, however, are achieved using a temperature dependent effective surface free energy. In contrast, calculations performed by ignoring the effects of barite nucleation lead to a substantial overestimation of the amount of scale formed in our modelled systems. The success of our mineral nucleation and growth model to describe scaling in our modelled system suggests this description of precipitation rates can be applied to many other mineral-aqueous fluid systems, in particular where supersaturation is slight and the solids forming have substantial surface free energy. © 2024 Elsevier Ltd
  • Article
    Citation - WoS: 9
    Citation - Scopus: 9
    High Voltage Response of Graphene/4h-sic Uv Photodetector With Low Level Detection
    (Elsevier, 2023) Jehad, Ala K.; Ünverdi, Özhan; Çelebi, Cem
    A self-powered graphene/silicon carbide (G/4H-SiC) ultraviolet photodetector of a p-i-n like-structure with high voltage response has been fabricated to detect and measure low intensity ultraviolet (UV) radiation. Bilayer graphene sheet grown by chemical vapor deposition (CVD) method was transferred on the top of an epilayer structure of n-/n+ 4 H-SiC. In this structure, two Schottky contacts were formed: one at G/ n- 4H-SiC interface and the other at bulk-4 H-SiC/Cr/Au interface. The photodetector's characteristic measurements revealed low dark current of - 0.58 nA and spectral voltage responsivity of - 0.75 V/W at 300 nm wavelength. Under low level UV illumination of 300 nm wavelength, the photodetector exhibited a leakage current and a photogenerated response voltage of 1.1 nA and 10 mV, respectively. The time-dependent photovoltage measurements displayed a rapid photovoltage response with rise and decay times of -74 ns and - 580 ns, respectively. This novel device holds promise for applications requiring sensitive and self-powered UV detection.
  • Article
    Citation - WoS: 35
    Citation - Scopus: 35
    Cvd Graphene/Sic Uv Photodetector With Enhanced Spectral Responsivity and Response Speed
    (Elsevier, 2023) Jehad, Ala K.; Fidan, Mehmet; Ünverdi, Özhan; Çelebi, Cem
    A self-powered, high-performance graphene/Silicon Carbide (G/4H-SiC) ultraviolet Schottky junction photodetector has been fabricated, and the effect of using monolayer and bilayer graphene on the device performance parameters was investigated. P-type graphene sheets were grown by the chemical vapor deposition (CVD) method, while 4H-SiC material consists of an epilayer structure of n-/n+ on bulk n-SiC. Two photodetector devices have been studied, one with monolayer graphene (MLG) and the other with bilayer graphene (BLG). The proposed photodetector structure reveals the highest spectral responsivity known of a G/4H-SiC UV photodetector so far. Electronic and optoelectronic characterizations were done under an ultraviolet wavelength range from 240 to 350 nm. The results show two spectral responsivity maxima (Rmax) at 285 nm and 300 nm wavelengths. Exhibiting two maxima in spectral responsivity and detectivity is caused by the constructive and destructive interference effects of multiple reflections at the SiC epilayer's interfaces. The photodetector devices exhibit high spectral responsivity (R ? 0.09 AW?1), maximum detectivity (D* ? 2.9 × 1012 Jones), and minimum noise equivalent power (NEP ? 0.17 pWHz-1/2) in both devices. Using bilayer graphene instead of monolayer showed no significant change in both the photogenerated current and the spectral responsivity due to the higher absorption coefficient of bilayer graphene, however, it exhibited a significant improvement in the response speed. The response speed was found to increase by 50 % when bilayer graphene was used as a hole collecting electrode in the G/4H-SiC junction. This is because bilayer graphene creates a narrower depletion layer and higher electric field, which promotes efficient charge separation and recombination. © 2023 Elsevier B.V.
  • Article
    Citation - WoS: 22
    Citation - Scopus: 26
    Flexible Metal/Semiconductor Type Photodetectors Based on Manganese Doped Zno Nanorods
    (Elsevier, 2023) Karagöz, Emine; Altaf, Çiğdem Tuç; Yaman, Ecenaz; Yıldırım, İpek Deniz; Erdem, Emre; Çelebi, Cem; Fidan, Mehmet; Sankir, Mehmet; Demirci Sankir, Nurdan
    High-performance flexible photodetectors are one of the most interesting research areas due to their great possibilities for a variety of applications such as portable and wearable optoelectronics. This study verifies the performance of flexible metal/semiconductor/metal-type photodetector based on pristine and manganese doped ZnO nanorods (ZnO-NRs) prepared in two different concentrations of zinc precursors and manganese dopant at low temperatures. The photodetectors having ZnO-NRs with high aspect ratios were investigated by various material characterization techniques such as electron paramagnetic resonance and photoluminescence spectroscopy to confirm the relationship between defect concentrations and photodetector performance parameters. It has been calculated that the detectivity (D*) and responsivity (R) of the ZnO nanorod-based photodetectors increased 20 and 18 folds, respectively by increasing the concentration of zinc precursor. Besides the D* and R values of the photodetectors, prepared by the 16.5 mM zinc precursor, increased 18 and 4.5-fold, respectively, after manganese doping. We confirmed that even a very low concentration of zinc precursor could produce a photodetector with high performance in photo-response characteristics, flexibility, and stability against 10,000 cycles of convex/concave bending.(c) 2023 Elsevier B.V. All rights reserved.
  • Article
    Citation - WoS: 5
    Citation - Scopus: 5
    Self-Powered Photodetector Array Based on Individual Graphene Electrode and Silicon-On Integration
    (Elsevier, 2023) Yanılmaz, Alper; Ünverdi, Özhan; Çelebi, Cem
    One of the key limitations for the device performance of the silicon (Si) based photodetector arrays is the optical crosstalk effect encountered between photoactive elements as well. The scope of this work is to reduce optical crosstalk and thus increasing the device performances with graphene and Si integration. This paper presents the design, fabrication process, and performance evaluation of self-powered individual Graphene/Silicon on Insulator (GSOI) based Schottky barrier photodiode array (PDA) devices. A 4-element GSOI Schottky barrier PDA with separate graphene electrodes is fabricated to examine possible optical crosstalk encountered between each diode in the array structure. Here, monolayer graphene is utilized as hole collecting separate electrode on individually arrayed n-type Si on SOI substrate by photolithography technique. Each diode in the array exhibited a clear rectifying Schottky character. Photoresponse characterizations revealed that all diodes had excellent device performance even in self-powered mode in terms of an Ilight/Idark ratio up to 104, a responsivity of ∼0.12 A/W, a specific detectivity of around 1.6 × 1012 Jones, and a response speed of ∼1.32 μs at 660 nm wavelength. As revealed by optical crosstalk measurement, the device with pixel pitch of 1.5 mm had a total crosstalk of about 0.10% (−60 dB) per array. These results showed that the optical crosstalk between neighboring n-Si elements can be greatly minimized when graphene is used as separated electrode on arrayed Si on SOI substrate. Our study is expected give an insight into the performance characteristics of GSOI PDA devices which have great potential to be used in many technological applications such as multi-wavelength light measurement, level metering, high-speed photometry and position/motion detection. © 2023 Elsevier B.V.
  • Article
    Citation - WoS: 20
    Citation - Scopus: 23
    Surface Free Energy and Wettability Properties of Transparent Conducting Oxide-Based Films With Ag Interlayer
    (Elsevier, 2021) Özbay, Salih; Erdoğan, Nursev; Erden, Fuat; Ekmekçioğlu, Merve; Rakop, Büşra; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, Lütfi
    ITO, ZTO, AZO and Ag are commonly used in transparent conducting oxide (TCO)/metal/TCO electrodes to form multilayered thin films on a suitable substrate. A detailed surface free energy (SFE) knowledge of these films is critical to design desirable TCO-based sandwich structures. In this study, TCO/Ag/TCO multilayer thin films were coated onto glass substrates using ITO, ZTO, AZO and Ag targets by magnetron sputtering. The wettability properties of TCO, Ag interlayer and TCO/Ag/TCO were evaluated by contact angle measurements of seven different liquids having various surface tension values. The dispersive and polar components of SFE were calculated using geometric and harmonic mean approaches. The acidic and basic components of SFE were calculated using van Oss-Chaudhury-Good method. Following this, the work of adhesion values between TCO films and Ag interlayer were estimated using SFE values of the films. The results show that the SFE components of the surfaces differ depending on the TCO type, the total SFE values of TCO/Ag/TCO films were lower than that of TCO films, and AZO/Ag adhesion is stronger than the other TCO/Ag structures. The reasons behind these differences were discussed by evaluating the SFE, XRD, AFM and SEM analysis simultaneously.
  • Article
    Citation - WoS: 17
    Citation - Scopus: 19
    Bacterial Surface, Biofilm and Virulence Properties of Listeriamonocytogenes Strains Isolated From Smoked Salmon and Fish Food Contact Surfaces
    (Elsevier, 2021) Sudağıdan, Mert; Özalp, Veli Cengiz; Öztürk, Orhan; Yurt, Mediha Nur Zafer; Yavuz, Orhan; Taşbaşı, Behiye Busra; Uçak, Samet; Mavili, Zehra Seda; Çoban, Ayşen
    Biofilm formation is one of the defense mechanisms of bacteria against disinfectants and antimicrobials. The aim of this study was to determine biofilm-forming L.monocytogenes from fish processing and salmon surfaces. Biofilm formation at 15, 25, 37, and 40 degrees C from 1 to 6-days period, adhesion to glass, polypropylene and stainless-steel surfaces, bacterial surface charge and hydrophobicity was determined. Adhesion behavior of the strains was evaluated using Surface Plasmon Resonance (SPR) technique. Totally 32 L.monocytogenes strains belonging to serogroups IIa (n:17), IIc(n:14) and IVb(n:1) were detected from 1320 swabs and 16 smoked salmons. Biofilm formation tests revealed that 21 strains form biofilm on microplate by increasing time and temperature. Although all strains strongly formed biofilm on glass surfaces, two strains slightly adhered polypropylene surfaces. High surface roughness of stainless-steel FeCrNi alloy (Ra = 4.15 nm) and CoCrMo alloy (Ra = 10.75 nm) increased biofilm formation of L.monocytogenes on stainless-steel surfaces. Zeta potential results showed that non-biofilm formers were more negatively charged after 6-days and hydrophobicity couldn't give a distinct distribution among biofilm formers and non-formers. SPR analysis method was evaluated to distinguish biofilm formers to adhere SPR gold chip surfaces. PCR results revealed that all strains were positive for hylA, iap, actA, plcA, plcB, fri, flaA, inlA, inlB, inlC, inlJ, and lmo1386 genes. Additionally, all strains were susceptible to penicillin, ampicillin, meropenem, erythromycin and trimethoprim-sulfamethoxazole. Biofilm-forming, virulence properties of L. monocytogenes strains isolated from fish processing surfaces and smoked salmons were evaluated and SPR was used to differentiate biofilm formers as a sensitive technique for biofilm studies.
  • Article
    Citation - WoS: 12
    Citation - Scopus: 17
    Junction Area Dependent Performance of Graphene/Silicon Based Self-Powered Schottky Photodiodes
    (Elsevier, 2021) Fidan, Mehmet; Ünverdi, Özhan; Çelebi, Cem
    This work reports the impact of junction area on the device performance parameters of Graphene/n-Silicon (Gr/n-Si) based Schottky photodiodes. Herein, three batches of Gr/n-Si photodiode samples were produced based on various sized CVD grown monolayer graphene layers transferred on individual n-Si substrates. The fabricated devices exhibited strong Schottky diode character and had high spectral sensi-tivity at 905 nm peak wavelength. The optoelectronic measurements showed that the spectral response of Gr/n-Si Schottky photodiodes has a linear dependence on the active junction area. The sample with 20 mm(2) junction area reached a spectral response of 0.76 AW(-1), which is the highest value reported in the literature for self-powered Gr/n-Si Schottky photodiodes without the modification of graphene electrode. In contrast to their spectral responsivities, the response speed of the samples were found to be lowered as a function of the junction area. The experimental results demonstrated that the device performance of Gr/n-Si Schottky photodiodes can be modified simply by changing the size of the graphene electrode on n-Si without need of external doping of graphene layer or engineering Gr/n-Si interface. This study may serve towards the standardization of junction area for the development of high performance Gr/Si based optoelectronic devices such as solar cells and photodetectors operating in between the ultraviolet and near-infrared spectral region. (C) 2021 Elsevier B.V. All rights reserved.
  • Article
    Citation - WoS: 9
    Citation - Scopus: 9
    A Family-nonuniversal U(1)′ model for excited beryllium decays
    (Elsevier, 2021) Puliçe, Beyhan
    Excited beryllium has been observed to decay into electron-positron pairs with a 6.8 sigma anomaly. The process is properly explained by a 17 MeV proto-phobic vector boson. In present work, we consider a family-nonuniversal U(1)' that is populated by a U(1)' gauge boson Z ' and a scalar field S, charged under U(1)' and singlet under the Standard Model (SM) gauge symmetry. The SM chiral fermion and scalar fields are charged under U(1)' and we provide them to satisfy the anomaly-free conditions. The Cabibbo-Kobayashi-Maskawa (CKM) matrix is reproduced correctly by higher-dimension Yukawa interactions facilitated by S. The vector and axial-vector current couplings of the Z ' boson to the first generation of fermions do satisfy all the bounds from the various experimental data. The Z ' boson can have kinetic mixing with the hypercharge gauge boson and S can directly couple to the SM-like Higgs field. The kinetic mixing of Z ' with the hypercharge gauge boson, as we show by a detailed analysis, generates the observed beryllium anomaly. We find that beryllium anomaly can be properly explained by a MeV-scale sector with a minimal new field content. The minimal model we construct forms a framework in which various anomalous SM decays can be discussed.
  • Article
    Citation - WoS: 63
    Citation - Scopus: 73
    Angular Analysis and Branching Fraction Measurement of the Decay B-0 -> K*(0)mu(+)mu(-)
    (Elsevier, 2013) Demir, Durmuş Ali; Karapınar, Güler
    The angular distributions and the differential branching fraction of the decay B-0 -> K*(892)(0)mu(+)mu(-) are studied using a data sample corresponding to an integrated luminosity of 5.2 fb(-1) collected with the CMS detector at the LHC in pp collisions at root s = 7 TeV. From more than 400 signal decays, the forward-backward asymmetry of the muons, the K*(892)(0) longitudinal polarization fraction, and the differential branching fraction are determined as a function of the square of the dimuon invariant mass. The measurements are in good agreement with standard model predictions. (C) 2013 CERN. Published by Elsevier B.V. All rights reserved.