Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 28Search for a Heavy Bottom-Like Quark in Pp Collisions at Root S=7 Tev(Elsevier Ltd., 2011) Demir, Durmuş Ali; Karapınar, GülerA search for pair-produced bottom-like quarks in pp collisions at root s = 7 TeV is conducted with the CMS experiment at the LHC. The decay b' -> tW is considered in this search. The b'(b) over bar' tW-(t) over barW(+) process can be identified by the distinctive signature of trileptons and same-sign dileptons. With a data sample corresponding to an integrated luminosity of 34 pb(-1), no excess above the standard model background predictions is observed and a b' quark with a mass between 255 and 361 GeV/c(2) is excluded at the 95% confidence level. (C) 2011 CERN. Published by Elsevier B.V. All rights reserved.Article Citation - WoS: 21Measurement of the Ratio of the 3-Jet To 2-Jet Cross Sections in Pp Collisions at Root S=7 Tev(Elsevier Ltd., 2011) Demir, Durmuş Ali; Karapınar, GülerA measurement of the ratio of the inclusive 3-jet to 2-jet cross sections as a function of the total jet transverse momentum. HT, in the range 0.2 < H-T < 2.5 TeV is presented. The data have been collected at a proton-proton centre-of-mass energy of 7 TeV with the CMS detector at the LHC, and correspond to an integrated luminosity of 36 pb(-1). Comparisons are made between the data and the predictions of different QCD-based Monte Carlo models for multijet production. All models considered in this study are consistent with the data for H-T > 0.5 TeV. This measurement extends to an H-T range that has not been explored before. (C) 2011 CERN. Published by Elsevier B.V. All rights reserved.Article Citation - WoS: 33Search for Physics Beyond the Standard Model Using Multilepton Signatures in Pp Collisions at Root S=7 Tev(Elsevier Ltd., 2011) Demir, Durmuş Ali; Karapınar, GülerA search for physics beyond the standard model in events with at least three leptons and any number of jets is presented. The data sample corresponds to 35 pb(-1) of integrated luminosity in pp collisions at root s = 7 TeV collected by the CMS experiment at the LHC. A number of exclusive multileptonic channels are investigated and standard model backgrounds are suppressed by requiring sufficient missing transverse energy, invariant mass inconsistent with that of the Z boson, or high jet activity. Control samples in data are used to ascertain the robustness of background evaluation techniques and to minimise the reliance on simulation. The observations are consistent with background expectations. These results constrain previously unexplored regions of supersymmetric parameter space. (C) 2011 CERN. Published by Elsevier B.V. All rights reserved.Article Citation - WoS: 2Citation - Scopus: 2Tuning Thermal Transport in Graphene Via Combinations of Molecular Antiresonances(Elsevier Ltd., 2018) Sevim, Koray; Sevinçli, HaldunWe propose a method to engineer the phonon thermal transport properties of low dimensional systems. The method relies on introducing a predetermined combination of molecular adsorbates, which give rise to antiresonances at frequencies specific to the molecular species. Despite their dissimilar transmission spectra, thermal resistances due to individual molecules remain almost the same for all species. On the other hand, thermal resistance due to combinations of different species are not additive and show large differences depending on the species. Using a toy model, the physics underlying the violation of resistance summation rule is investigated. It is demonstrated that equivalent resistance of two scatterers having the same resistances can be close to the sum of the constituents or ∼ 70% of it depending on the relative positions of the antiresonances. The relative positions of the antiresonances determine the net change in transmission, therefore the equivalent resistance. Since the entire spectrum is involved in phonon spectrum changes in different parts of the spectrum become important. Performing extensive first-principles based computations, we show that these distinctive attributes of phonon transport can be useful to tailor the thermal transport through low dimensional materials, especially for thermoelectric and thermal management applications.Article Citation - WoS: 8Citation - Scopus: 10Experimental and Computational Investigation of Graphene/Sams Schottky Diodes(Elsevier Ltd., 2018) Aydın, Hasan; Bacaksız, Cihan; Yağmurcukardeş, Nesli; Karakaya, Caner; Mermer, Ömer; Can, Mustafa; Senger, Ramazan Tuğrul; Şahin, Hasan; Selamet, YusufWe have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1′:3′1′-terphenyl-5′ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current–voltage (I–V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)–V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π–π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.Article Citation - WoS: 4Citation - Scopus: 5Conductance Fluctuations in Undoped Hydrogenated Amorphous Silicon-Germanium Alloy Thin Films(Elsevier Ltd., 2002) Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O.; Yang, Jeffrey C.; Guha, SubhenduWe report coplanar conductance fluctuations of device quality, undoped hydrogenated amorphous silicon-germanium alloy thin films (a-SiGe:H) measured from 430 to 490 K. The a-SiGe:H alloys produce noise power spectra similar to coplanar undoped a-Si:H films in the same temperature range. The noise power spectrum S(n) does not fit a single 1/fα power law but rather has two distinct regions, each accurately fitted by a power law, but with different slopes. The low frequency slope α1 is similar to that observed in undoped a-Si:H films varying from 1.30 to 1.46 for different Ge concentrations and shows a slight temperature dependence. At higher frequencies, the slope α2 is less than unity and temperature independent but depends on the Ge content of the film. α2 decreases from 0.60 for no Ge (pure a-Si:H) to 0.15 for 40 at.% Ge. The noise power at lower frequencies increases and at higher frequencies decreases substantially as the temperature increases from 430 to 490 K. We infer that similar noise mechanisms are operating in undoped a-SiGe:H and a-Si:H films but that the Ge content is influencing the noise, particularly the slope at higher frequencies. In addition, the noise has the expected quadratic dependence on bias current and obeys Gaussian statistics.Article Citation - WoS: 12Citation - Scopus: 12Ultra-Thin Znse: Anisotropic and Flexible Crystal Structure(Elsevier Ltd., 2017) Bacaksız, Cihan; Şenger, Ramazan Tuğrul; Şahin, HasanBy performing density functional theory-based calculations, we investigate the structural, electronic, and mechanical properties of the thinnest ever ZnSe crystal [11]. The vibrational spectrum analysis reveals that the monolayer ZnSe is dynamically stable and has flexible nature with its soft phonon modes. In addition, a direct electronic band gap is found at the gamma point for the monolayer structure of ZnSe. We also elucidate that the monolayer ZnSe has angle dependent in-plane elastic parameters. In particular, the in-plane stiffness values are found to be 2.07 and 6.89 N/m for the arm-chair and zig-zag directions, respectively. The angle dependency is also valid for the Poisson ratio of the monolayer ZnSe. More significantly, the in-plane stiffness of the monolayer ZnSe is the one-tenth of Young modulus of bulk zb-ZnSe which indicates that the monolayer ZnSe is a quite flexible single layer crystal. With its flexible nature and in-plane anisotropic mechanical properties, the monolayer ZnSe is a good candidate for nanoscale mechanical applications.Article Citation - WoS: 9Citation - Scopus: 9Is It Possible To Obtain Cosmic Accelerated Expansion Through Energy Transfer Between Different Energy Densities?(Elsevier Ltd., 2017) Erdem, RecaiThe equation of state of an energy density may be significantly modified by coupling it to another energy density. In the light of this observation we check the possibility of producing cosmic accelerated expansion in this way. In particular we consider the case where matter is converted to radiation (or vice versa by particle physics processes). We find that cosmic accelerated expansion can be obtained in this way only if an intermediate state with negative equation of state forms during the conversion.Article Citation - WoS: 36Citation - Scopus: 37Influence of Copper Composition and Reaction Temperature on the Properties of Cztse Thin Films(Elsevier Ltd., 2016) Olgar, Mehmet Ali; Atasoy, Y.; Başol, B. M.; Tomakin, Murat|Özyüzer, Gülnur Aygün; Özyüzer, Lütfi; Bacaksız, EminIn this study Cu2ZnSnSe4 (CZTSe) compound layers were grown using a two-stage technique that involved deposition of metallic precursors (Cu, Zn, and Sn) and Se in the first stage, followed by reaction of all the species at temperatures between 525 °C and 600 °C, during the second stage of the process. Two sets of samples, one with Cu-poor, Zn-rich and the other with Cu-rich, Zn-rich compositions, were prepared and their structural, optical and electrical properties were measured. XRD analyses showed the characteristic peaks of CZTSe regardless of the Cu content and the processing temperature. However, for samples reacted at temperatures of 575 °C and 600 °C a Cu2-xSe secondary phase separation was detected for all films suggesting that the reaction temperatures should be limited to values below 575 °C in a two-stage process such as ours. Excessive Sn loss was also present in samples processed at the highest temperatures. Raman scattering measurements confirmed formation of the CZTSe kesterite structure, and also indicated a small ZnSe phase, which could not be detected by XRD. Scanning electron micrographs demonstrated dense film structure with the Cu-rich films having smoother morphology. Optical characterization showed that increasing the Cu content in the compound layers caused a reduction in the optical band gap values due to increased interaction between the Cu-3d orbital electrons and the Se-4p orbital electrons. Electrical measurements showed that the carrier concentration increased with Cu content.Article Citation - WoS: 2Citation - Scopus: 2Higgsed Stueckelberg Vector and Higgs Quadratic Divergence(Elsevier Ltd., 2015) Demir, Durmuş Ali; Karahan, Canan Nurhan; Korutlu, BesteHere we show that, a hidden vector field whose gauge invariance is ensured by a Stueckelberg scalar and whose mass is spontaneously generated by the Standard Model Higgs field contributes to quadratic divergences in the Higgs boson mass squared, and even leads to its cancellation at one-loop when Higgs coupling to gauge field is fine-tuned. In contrast to mechanisms based on hidden scalars where a complete cancellation cannot be achieved, stabilization here is complete in that the hidden vector and the accompanying Stueckelberg scalar are both free from quadratic divergences at one-loop. This stability, deriving from hidden exact gauge invariance, can have important implications for modeling dark phenomena like dark matter, dark energy, dark photon and neutrino masses. The hidden fields can be produced at the LHC.