Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
Browse
23 results
Search Results
Article Citation - WoS: 3Citation - Scopus: 4Lipid Bilayer on Wrinkled-Interfaced Graphene Field Effect Transistor(Elsevier Ltd., 2021) Özkendir İnanç, Dilce; Çelebi, Cem; Yıldız, Ümit HakanThis study describes lipid bilayer-based sensor interface on SiO2 encapsulated graphene field effect transistors (GFET). The SiO2 layer was utilized as a lipid compatible surface that drives bilayer formation. The two types of surface morphologies i) wrinkled morphology by thermal evaporation (TE) and ii) flat morphology by pulsed electron deposition (PED) were obtained. The sensing performance of wrinkled and flat interfaced-GFETs were investigated, pH sensitivity of wrinkled interfaced-GFETs were found to be ten fold larger than the flat ones. The enhanced sensitivity is attributed to thinning of the oxide layer by formation of wrinkles thereby facilitating electrostatic gating on graphene. We foresee that described wrinkled SiO2 interfaced-GFET holds promise as a cell membrane mimicking sensing platform for novel bioelectronic applications. © 2020Article Citation - WoS: 7Citation - Scopus: 8Investigation of the Structural and Optical Properties of Copper-Titanium Oxide Thin Films Produced by Changing the Amount of Copper(Elsevier Ltd., 2019) Horzum, Şeyda; Gürakar, Sibel; Serin, TülayWe examine how the structural, morphological and optical properties of TiO2 thin films are changed with heavily copper (Cu) content. Variations in characteristic properties of the films with 0, 12.5, 25 and 50 wt% Cu contents, grown by sol-gel dip coating method, are observed by using X-ray diffraction (XRD), Raman scattering, atomic force microscopy, energy dispersive X-ray analysis and optical spectroscopy measurements. The XRD and Raman spectra indicate that pure TiO2 film forms in the anatase structure. At high Cu concentrations, XRD results also reveal the substitution of Ti with Cu and formation of extra compound Copper-Titanium oxide. Raman measurements also show that Cu is incorporated homogeneously into TiO2 matrix up to 12.5 wt% concentration and this uniformity is distorted at higher Cu contents. In addition, optical spectroscopy measurements show that the optical band gap energy decreases from 3.26 eV to 2.05 eV with increasing Cu concentration. Furthermore, it is observed that the refractive index values obtained by means of transmittance spectra at 550 nm wavelength; increases from 2.47 to 3.39 when the Cu concentration increases from 0 to 50 wt %.Article Citation - WoS: 21Citation - Scopus: 24Effect of Defects and Secondary Phases in Cu2znsns4 Absorber Material on the Performance of Zn(o,s) Buffered Devices(Elsevier Ltd., 2019) Türkoğlu, Fulya; Köseoğlu, Hasan; Cantaş, Ayten; Akça, Fatime Gülşah; Meriç, Ece; Buldu, Dilara Gökçen; Aygün, GülnurCopper zinc fin sulfide (CZTS) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-toxic elements contrary to other chalcogenide based solar cells. In the present work, CZTS absorber layers were prepared following a two-stage process: firstly, a stack of metal precursors (Copper (Cu)/Tin (Sn)/Zinc (Zn)/Copper (Cu)) were deposited on molybdenum (Mo) substrate by magnetron sputtering, then this stack was annealed under S atmosphere inside a tubular furnace. CZTS thin films were investigated using energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The effect of sulfurization time and the thickness of top and bottom Cu layer in precursors on the properties of CZTS thin films were investigated. The importance of Cu thickness adjacent to Sn to avoid detrimental phases was addressed. The significance of sulfurization time to restrict the Sn and Zn losses, formation of oxides such as fin dioxide and zinc oxide, and formation of molybdenum disulfide and voids between Mo/CZTS interface was also addressed. Moreover, cadmium sulfide buffer layer, which is conventionally used in CZTS solar cells, is replaced by an environmentally friendly alternative zinc oxysulfide buffer layer.Editorial Preface(Elsevier Ltd., 2017) Özyüzer, Lütfi; Kosiel, Kamil; Reno, John L.; Basa, Deekpak KumarIt is our pleasure to publish the proceedings of selected papers from the Science and Applications of Thin Films, Conference & Exhibition (SATF2016) in a Special Issue of Thin Solid Films. SATF2016 was held at the Ilica Hotel Spa & Wellness Thermal Resort, Cesme, Izmir, Turkey, from September 19 to 23, 2016. It was a very successful conference with over 241 abstracts submitted from33 countries, including 30 invited talks, 61 contributed talks, and over 150 poster presentations. More information about the conference can be found at http://www. satf2016.org/Article Citation - WoS: 51Citation - Scopus: 48Cu2znsns4-Based Thin Films and Solar Cells by Rapid Thermal Annealing Processing(Elsevier Ltd., 2017) Olgar, Mehmet Ali; Klaer, J.; Mainz, R.; Özyüzer, Lütfi; Unold, T.In this study, kesterite Cu2ZnSnS4 (CZTS) absorber layers were fabricated by DC magnetron sputtering deposition of metallic Cu-Zn-Sn precursors, followed by an annealing treatment in sulfur vapor atmosphere at 600 °C for 3 min using rapid thermal processing (RTP). Three types of stacked metallic films were prepared and included pre-annealing of Cu-Sn stacks in order to induce preferential Cu-Sn alloying. The chemical composition of the sulfurized films was obtained by X-ray fluorescence (XRF) before and after etching the samples in KCN solution. All CZTS thin films are found to be Cu-poor and Zn-rich. Structural characterizations were performed by X-ray diffraction (XRD) and Raman spectroscopy to investigate the impact of pre-annealing on the structural properties of the precursors and final CZTS films. Glow discharge optical emission spectroscopy (GDOES) shows that pre-annealing of the precursors can improve depth homogeneity of the CZTS films. Photoluminescence spectra and the optical band gap energy values are compatible with literature. Selected samples were processed to solar cells and characterized.Article Citation - WoS: 22Citation - Scopus: 23Effect of Heat Treating Metallic Constituents on the Properties of Cu2znsnse4 Thin Films Formed by a Two-Stage Process(Elsevier Ltd., 2017) Olgar, Mehmet Ali; Başol, B. M.; Atasoy, Y.; Tomakin, Murat; Aygün, Gülnur; Özyüzer, Lütfi; Bacaksız, EminIn this study Cu2ZnSnSe4 (CZTSe) thin films were grown by a two-stage process that involved sputter deposition of a Cu/Sn/Zn/Cu metallic stack, annealing the stack at various temperatures for 30 min, evaporation of a Se cap over the metallic stack thus forming a precursor layer, and subjecting the precursor layer to a final high temperature reaction step at 550 °C. Different samples were prepared with annealing temperatures of the metallic stacks ranging from 200 °C to 350 °C. The results showed that heat treatment of the metallic stacks did not cause much change in their morphology and elemental composition, however their phase content changed noticeably when the anneal temperature was raised to 250 °C. Specifically, while the metallic films were dominated by CuSn and Cu5Zn8 phases at low temperatures, the dominant phase shifted to Cu6Sn5 at the annealing temperature of 250 °C and higher. Also formation of a distinct Cu3Zn2 phase was observed upon annealing at temperatures at or above 250 °C. After reaction with Se, the CZTSe layer obtained from the metallic film, which was annealed at 250 °C was found to be the best n terms of its composition, crystalline quality and purity, although it contained a small amount of CuSe. The other layers were found to contain small amounts of other secondary phases such as SnSe, CuSe2, ZnSe and Cu2SnSe3. SEM micrographs showed denser structure for CZTSe layers grown from metallic films annealed at or above 250 °C. Optical band gap, resistivity and carrier concentration of the best quality CZTSe film were found to be about 0.87 eV, 2 Ω-cm and 4 × 1017 cm− 3, respectively.Article Citation - WoS: 42Citation - Scopus: 44Growth of Cu2znsns4 Absorber Layer on Flexible Metallic Substrates for Thin Film Solar Cell Applications(Elsevier Ltd., 2015) Yazıcı, Şebnem; Olgar, Mehmet Ali; Akça, Fatime Gülşah; Cantaş, Ayten; Kurt, Metin; Aygün, Gülnur; Tarhan, Enver; Yanmaz, Ekrem; Özyüzer, LütfiIn this work, Cu2ZnSnS4 (CZTS) absorber layers were fabricated using a two-stage process. Sequentially deposited Cu-Zn-Sn thin film layers on metallic foils were annealed in an Ar + S2(g) atmosphere. We aimed to investigate the role of flexible titanium and molybdenum foil substrates in the growth mechanism of CZTS thin films. The Raman spectra and X-ray photoelectron spectroscopy analyses of the sulfurized thin films revealed that, except for the presence of Sn-based secondary phases, nearly pure CZTS thin films were obtained. Additionally, the intense and sharp X-ray diffraction peak from the (112) plane provided evidence of good crystallinity. Electron dispersive spectroscopy analysis indicated sufficient sulfur content but poor Zn atomic weight percentage in the films. Absorption and band-gap energy analyses were carried out to confirm the suitability of CZTS thin films as the absorber layer in solar cell applications. Hall effect measurements showed the p-type semiconductor behavior of the CZTS samples. Moreover, the back contact behavior of these metallic flexible substrates was investigated and compared. We detected formation of cracks in the CZTS layer on the molybdenum foils, which indicates the incompatibility of molybdenum's thermal expansion coefficient with the CZTS structure. We demonstrated the application of the magnetron sputtering technique for the fabrication of CZTS thin films on titanium foils having lightweight, flexible properties and suitable for roll-to-roll manufacturing for high throughput fabrication. Titanium foils are also cost competitive compared to molybdenum foils. © 2015 Elsevier B.V.Article Citation - WoS: 2Citation - Scopus: 3Use of Combination of Accelerator-Based Ion-Beam Analysis Techniques To the Investigation of the Corrosion Behavior of Cocrmo Alloy(Elsevier Ltd., 2014) Noli, F.; Misaelides, P.; Lagoyannis, A.; Pichon, L.; Öztürk, OrhanNuclear Reaction Analysis - NRA in combination with d-RBS (Ed: 1.35 MeV) was applied in order to investigate the corrosion behavior of CoCrMo alloy. The corrosion resistance of the alloy was compared to that of modified CoCrMo samples by several techniques as plasma nitriding and oxidizing at moderate temperature (∼400 °C). Electrochemical techniques in simulated body fluid 0.9% NaCl (37 °C) were applied in order to accelerate the corrosion process. The nitrogen depth distribution before and after the corrosion was determined using the 14N(d,α)12C and the 14N(d,p)15N nuclear reactions whereas the oxygen by the 16O(d,p)17O. The surface morphology and microstructure was investigated using microscopy techniques. It was found that surface treatments produce thick nitrided layers (5-6 μm) consisting of a supersaturated nitrogen solution (nitrogen concentration is ∼30 at.%) in the matrix (expanded phase γN) and a thin oxygen solution (0.3 μm). The samples subjected to plasma nitridation and oxidation exhibited the lowest deterioration and better resistance to corrosion compared to the single nitrided or single oxidized and the untreated material. This could be attributed to the modified surface region with the high nitrogen content and the presence of oxygen.Article Citation - WoS: 29Citation - Scopus: 30The Structural, Optical and Morphological Properties of Caf2 Thin Films by Using Thermionic Vacuum Arc (tva)(Elsevier Ltd., 2013) Çetin, N. Emre; Korkmaz, Şadan; Elmas, Saliha; Ekem, Naci; Pat, Suat; Balbag, M. Zafer; Tarhan, Enver; Temel, Sinan; Özmumcu, MuratIn this study, calcium fluoride (CaF2) thin films have been prepared by Thermionic Vacuum Arc (TVA) technique on glass substrates. In this technique CaF2 thin films are produced by condensing the plasma of anode material generated in the TVA setup under high vacuum conditions on glass substrates. Crystal structures as well as optical and surface properties of CaF2 antireflective (AR) coated thin films were investigated. X-ray diffraction (XRD) measurements showed that amorphous CaF2 thin films were formed. Optical and surface properties of CaF2 films have been studied based on optical transmittance, reflectance, refractive index and atomic force microscopy imaging (AFM). Our results also show that CaF2 coated samples exhibit lower reflectance (R). From our optical studies, we have observed that CaF2 thin films have high AR properties.Article Citation - WoS: 3Citation - Scopus: 3Close Binary System Go Cyg(Elsevier Ltd., 2012) Ulaş, Burak; Kalomeni, Belinda; Keskin, Varol; Köse, O.; Yakut, KadriIn this study, we present long term photometric variations of the close binary system GO Cyg. Modelling of the system shows that the primary is filling Roche lobe and the secondary of the system is almost filling its Roche lobe. The physical parameters of the system are M1 = 3.0 ± 0.2M ⊙, M2 = 1.3 ± 0.1M⊙, R 1 = 2.50 ± 0.12R⊙, R2 = 1.75 ± 0.09R⊙, L1 = 64 ± 9L ⊙, L2 = 4.9 ± 0.7L⊙, and a = 5.5 ± 0.3R⊙. Our results show that GO Cyg is the most massive system near contact binary (NCB). Analysis of times of the minima shows a sinusoidal variation with a period of 92.3 ± 0.5 yr due to a third body whose mass is less than 2.3M⊙. Finally a period variation rate of -1.4 × 10-9 d/yr has been determined using all available light curves.
- «
- 1 (current)
- 2
- 3
- »