Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Publisher: search.filters.publisher.Royal Society of ChemistrySubject: search.filters.subject.Graphene

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  • Article
    Citation - WoS: 54
    Citation - Scopus: 53
    Nitrogen Doping for Facile and Effective Modification of Graphene Surfaces
    (Royal Society of Chemistry, 2017) Yanılmaz, Alper; Tomak, Aysel; Selamet, Yusuf; Bacaksız, Cihan; Özçeri, Elif; Arı, Ozan; Senger, Ramazan Tuğrul; Selamet, Yusuf; Tomak, Aysel; Senger, Ramazan Tuğrul; 03.01. Department of Bioengineering; 01. Izmir Institute of Technology; 04.05. Department of Pyhsics; 03. Faculty of Engineering; 04. Faculty of Science
    We report experimental and theoretical investigations of nitrogen doped graphene. A low-pressure Chemical Vapor Deposition (CVD) system was used to grow large-area graphene on copper foil, using ethylene as the carbon source. Nitrogen-doped graphene (N-graphene) was prepared by exposing the graphene transferred to different substrates to atomic nitrogen plasma. The effect of varying nitrogen flow rates on doping of graphene was investigated while keeping the power and time constant during the process. The N-graphene was characterized via Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Scanning Tunneling Microscopy and Spectroscopy (STM and STS), and Fourier Transform Infrared spectroscopy (FTIR). Raman mapping of N-graphene was also performed to show homogeneity of nitrogen on the graphitic lattice. XPS results have revealed the presence of different nitrogen configurations in the graphitic lattice with similar doping concentrations. Density functional theory (DFT) based calculations showed that the periodic adsorption of N atoms predominantly occurs on top of the C atoms rather than through substitution of C in our N-graphene samples. Our results indicate a feasible procedure for producing N-graphene with homogenous and effective doping which would be valuable in electronic and optical applications.
  • Article
    Citation - WoS: 40
    Citation - Scopus: 40
    Nitrogenated, Phosphorated and Arsenicated Monolayer Holey Graphenes
    (Royal Society of Chemistry, 2015) Yağmurcukardeş, Mehmet; Horzum, Şeyda; Senger, Ramazan Tuğrul; Horzum, Şeyda; Yağmurcukardeş, Mehmet; 04.04. Department of Photonics; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    Motivated by a recent experiment that reported the synthesis of a new 2D material nitrogenated holey graphene (C2N) [Mahmood et al., Nat. Commun., 2015, 6, 6486], the electronic, magnetic, and mechanical properties of nitrogenated (C2N), phosphorated (C2P) and arsenicated (C2As) monolayer holey graphene structures are investigated using first-principles calculations. Our total energy calculations indicate that, similar to the C2N monolayer, the formation of the other two holey structures are also energetically feasible. Calculated cohesive energies for each monolayer show a decreasing trend going from the C2N to C2As structure. Remarkably, all the holey monolayers considered are direct band gap semiconductors. Regarding the mechanical properties (in-plane stiffness and Poisson ratio), we find that C2N has the highest in-plane stiffness and the largest Poisson ratio among the three monolayers. In addition, our calculations reveal that for the C2N, C2P and C2As monolayers, creation of N and P defects changes the semiconducting behavior to a metallic ground state while the inclusion of double H impurities in all holey structures results in magnetic ground states. As an alternative to the experimentally synthesized C2N, C2P and C2As are mechanically stable and flexible semiconductors which are important for potential applications in optoelectronics.