Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 2Citation - Scopus: 2In-Situ Thin Film Copper-Copper Thermocompression Bonding for Quantum Cascade Lasers(Springer, 2021) Rouhi, Sina; Özdemir, Mehtap; Ekmekçioğlu, Merve; Yiğen, Serap; Demirhan, Yasemin; Szerling, Anna; Kosiel, Kamil; Kozubal, Maciej; Kruszka, Renata; Prokaryn, Piotr; Ertuğrul, Mehmet; Reno, John L.; Aygün, Gülnur; Özyüzer, LütfiThe choice of metals, bonding conditions and interface purity are critical parameters for the performance of metal-metal bonding quality for quantum cascade lasers (QCLs). Here, we present a novel approach for the thermocompression bonding of Cu-Cu thin films on GaAs-based waveguides without having any oxide phase, contamination or impurities at the interface. We designed a hybrid system in which magnetron sputtering of Ta, thermal evaporation of Cu and Cu-Cu thermocompression bonding processes can be performed sequentially under high vacuum conditions. GaAs/Ta/Cu and Cu/Ta/GaAs structures were thermocompressionally bonded in our in-situ homebuilt bonding system by optimizing the deposition parameters and bonding conditions. The grown thin film and the obtained interfaces were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDX) techniques. The optimum Ta and Cu films' thicknesses were found to be about 20 nm and 500 nm, respectively. EDX analysis showed that the Ta thin film interlayer diffused into the Cu structure, providing better adhesivity and rigidity for the bonding. Additionally, no oxidation phases were detected at the interface. The best bonding quality was obtained when heated up to 430 degrees C with an applied pressure of 40 MPa during bonding process.Article Citation - WoS: 7Citation - Scopus: 8Investigation of the Structural and Optical Properties of Copper-Titanium Oxide Thin Films Produced by Changing the Amount of Copper(Elsevier Ltd., 2019) Horzum, Şeyda; Gürakar, Sibel; Serin, TülayWe examine how the structural, morphological and optical properties of TiO2 thin films are changed with heavily copper (Cu) content. Variations in characteristic properties of the films with 0, 12.5, 25 and 50 wt% Cu contents, grown by sol-gel dip coating method, are observed by using X-ray diffraction (XRD), Raman scattering, atomic force microscopy, energy dispersive X-ray analysis and optical spectroscopy measurements. The XRD and Raman spectra indicate that pure TiO2 film forms in the anatase structure. At high Cu concentrations, XRD results also reveal the substitution of Ti with Cu and formation of extra compound Copper-Titanium oxide. Raman measurements also show that Cu is incorporated homogeneously into TiO2 matrix up to 12.5 wt% concentration and this uniformity is distorted at higher Cu contents. In addition, optical spectroscopy measurements show that the optical band gap energy decreases from 3.26 eV to 2.05 eV with increasing Cu concentration. Furthermore, it is observed that the refractive index values obtained by means of transmittance spectra at 550 nm wavelength; increases from 2.47 to 3.39 when the Cu concentration increases from 0 to 50 wt %.Article Citation - WoS: 33Citation - Scopus: 33Characterization of Thin Film Li0.5la0.5ti1-Xalxo3 Electrolyte for All-Solid Li-Ion Batteries(Elsevier, 2018) Ulusoy, Seda; Gülen, Sena; Aygün, Gülnur; Özyüzer, Lütfi; Özdemir, MehtapSince addition of Al in Li0.5La0.5TiO3 has enhanced ionic conductivity in bulk materials, it is important to apply this material on all solid state thin film batteries. Because some of the good ionic conductors such as Lithium Phosphorus Oxynitride (LiPON) are sensitive to oxygen and moisture and their application is limited, so amorphous Li0.5La0.5Ti1−xAlxO3 (LLTAlO) is a most promising candidate because of its stability. In this study, the crystalline LLTAlO targets were prepared changing the amount of x content by conventional solid state reactions. Using these targets, lithium lanthanum titanium oxide (LLTO) thin film electrolytes were deposited on ITO/SLG substrates by radio frequency magnetron sputtering system in Ar atmosphere. The structural and compositional properties of targets and thin films were characterized by SEM, XRD, Raman spectroscopy and XPS. It was found that all targets are crystalline while the thin films are amorphous. To understand the effect of Al doping on ionic conductivity, electrical measurements were done at room temperature by AC impedance spectroscopy forming ITO/LLTAlO/Al structure like capacitor. Highest ionic conductivity result, 0.96 × 10−6 S·cm−1, is obtained from the nominal thin film composition of Li0.5La0.5Ti1−xAlxO3 (x = 0.05) at room temperature measurements. Heat treatment is also conducted to investigate to understand its effect on ionic conductivity and the structure of the thin films. It is found that ionic conductivity enhances with annealing. Also, temperature dependent ionic conductivity measurements from 298 K to 385 K are taken in order to evaluate activation energy for Li-ion conduction.Article Citation - WoS: 4Citation - Scopus: 5Identifying Threading Dislocations in Cdte Films by Reciprocal Space Mapping and Defect Decoration Etching(American Institute of Physics, 2018) Polat, Mustafa; Bilgilisoy, Elif; Arı, Ozan; Öztürk, Orhan; Selamet, YusufWe study threading dislocation (TD) density of high-quality cadmium telluride (CdTe) layers grown on a (211) oriented GaAs substrate by molecular beam epitaxy. High-resolution X-ray diffraction was performed to calculate the density of screw-type TDs by measuring the broadening of the asymmetrical (511) Bragg reflections of CdTe epilayers. In addition, total TD densities were determined by the Everson-etching method and were compared with screw TDs. Our results show that the total TD densities in CdTe films were dominated by those with screw character. The screw component TDs are estimated to account for more than 90% of the total TD density. CdTe layers grown at a thickness of less than 3.0 μm typically exhibit the screw TD densities in the 106 cm-2 and 107 cm-2 range. It can be noted that as the nucleation temperature increases, i.e., ≥222 °C, both the area density of TDs with the screw component of the CdTe films and the total TD density are roughly four times larger than those of the epilayer grown at the nucleation temperature of 215 °C. Furthermore, we discuss the influence of the II/VI flux ratio on the density of threading dislocations. The contribution of screw TDs to the total TD density showed a significant decrease in roughly 30% in the case of a high II/VI flux ratio. We further examine the reciprocal space maps in the vicinity of the (422) reflections.Article Citation - WoS: 6Citation - Scopus: 10Effect of Annealing on the Density of Defects in Epitaxial Cdte (211)/Gaas(Springer, 2018) Bakali, Emine; Selamet, Yusuf; Tarhan, EnverCdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied the effect of annealing on the density of dislocation of these CdTe thin films under varying annealing parameters such as annealing temperature, annealing duration, and number of cycles. Annealings were carried out using a homemade annealing reactor possessing a special heater element made of a Si wafer for rapid heating. The density of dislocations, which were made observable with a scanning electron microscope after etching with an Everson solution, were calculated by counting the number of dislocations per unit surface area, hence the term etch pit density (EPD). We were able to decrease EPD values by one order of magnitude after annealing. For example, the best EPD value after a 20-min annealing at 400°C was ∼ 2 × 107 cm−2 for a 1.63-μm CdTe thin film which was about 9.5 × 107 cm−2 before annealing. We also employed Raman scattering measurements to see the changes in the structural quality of the samples. From the Raman measurements, we were able to see improvements in the quality of our samples from the annealing by studying the ratio of 2LO/LO phonon mode Raman intensities. We also observed a clear decrease in the intensity of Te precipitations-related modes, indicating a decrease in the size and number of these precipitations.Article Citation - WoS: 15Citation - Scopus: 17Effect of Substrate Rotation Speed and Off-Center Deposition on the Structural, Optical, and Electrical Properties of Azo Thin Films Fabricated by Dc Magnetron Sputtering(American Institute of Physics, 2018) Türkoğlu, Fulya; Aygün, Gülnur; Köseoğlu, Hasan; Özdemir, Mehtap; Zeybek, S.; Özyüzer, Lütfi; Özdemir, Mehtap; Özyüzer, Gülnur Aygün; Özyüzer, LütfiIn this study, aluminum-doped zinc oxide (AZO) thin films were deposited by DC magnetron sputtering at room temperature. The distance between the substrate and target axis, and substrate rotation speed were varied to get high quality AZO thin films. The influences of these deposition parameters on the structural, optical, and electrical properties of the fabricated films were investigated by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometry, and four-point probe techniques. The overall analysis revealed that both sample position and substrate rotation speed are effective in changing the optical, structural, and electrical properties of the AZO thin films. We further observed that stress in the films can be significantly reduced by off-center deposition and rotating the sample holder during the deposition. An average transmittance above 85% in the visible range and a resistivity of 2.02 × 10-3Ω cm were obtained for the AZO films.Article Citation - WoS: 42Citation - Scopus: 46Importance of Cds Buffer Layer Thickness on Cu2znsns4-Based Solar Cell Efficiency(IOP Publishing Ltd., 2018) Cantaş, Ayten; Türkoğlu, Fulya; Meriç, Ece; Akça, Fatime Gülşah; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Özyüzer, Gülnur AygünCu2ZnSnS4 (CZTS) thin films were grown on Mo-coated soda lime glass (SLG) substrates by the sulfurization of DC magnetron-sputtered Zn, Sn and Cu metallic precursors under a sulfur atmosphere at 550 °C for 45 min. Understanding the composition and structure of the CZTS absorber layer is necessary to obtain efficient solar cells. With this aim, x-ray diffractometry, Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy and x-ray photoelectron spectroscopy were used to investigate the CZTS absorber layers. CZTS absorber films were obtained and found to be Cu-poor and Zn-rich in composition, which are both qualities desired for efficient solar cells. CdS was used as a buffer layer and was grown by the chemical bath deposition technique. The optical properties of CdS films on SLG were searched for using a spectroscopic ellipsometer and the results revealed that the bandgap increases with film thickness increment. CZTS-based solar cells with different CdS buffer layer thicknesses were prepared using a SLG/Mo/CZTS/CdS/ZnO/AZO solar cell configuration. The influence of the CdS buffer layer thickness on the performance of the CZTS solar cells was investigated. Device analysis showed that electrical characteristics of solar cells strongly depend on the buffer layer's thickness. Highly pronounced changes in V OC, fill factor and J SC parameters, which are the main efficiency limiting factors, with changing buffer layer thicknesses were observed. Our experiments confirmed that decreasing the CdS thickness improved the efficiency of CZTS solar cells down to the lowest thickness limit.Editorial Preface(Elsevier Ltd., 2017) Özyüzer, Lütfi; Kosiel, Kamil; Reno, John L.; Basa, Deekpak KumarIt is our pleasure to publish the proceedings of selected papers from the Science and Applications of Thin Films, Conference & Exhibition (SATF2016) in a Special Issue of Thin Solid Films. SATF2016 was held at the Ilica Hotel Spa & Wellness Thermal Resort, Cesme, Izmir, Turkey, from September 19 to 23, 2016. It was a very successful conference with over 241 abstracts submitted from33 countries, including 30 invited talks, 61 contributed talks, and over 150 poster presentations. More information about the conference can be found at http://www. satf2016.org/Article Citation - WoS: 13Citation - Scopus: 13Fourcross Shaped Metamaterial Filters Fabricated From High Temperature Superconducting Ybco and Au Thin Films for Terahertz Waves(IOP Publishing Ltd., 2017) Demirhan, Yasemin; Alaboz, Hakan; Nebioğlu, Mehmet Ali; Mulla, B.; Akkaya, M.; Altan, Hakan; Sabah, Cumali; Özyüzer, LütfiIn this study, we present a new, unique fourcross shaped metamaterial terahertz (THz) filter fabricated from both gold thin films and YBa2Cu3O7-δ high Tc superconducting thin films. A commercial electromagnetic simulation software, CST Microwave Studio, is used to design and optimize the metamaterial filter structures. The proposed fourcross shaped rectangular filter structure consists of periodic metallic rings where strip lines are located at the sides of the ring. Fourcross metamaterial filters are fabricated by using e-beam lithography and ion beam exhing techniques. Terahertz time-domain spectroscopy measurements validated the design predictions for both the center frequencies and bandwidths of the resonances due to the fourcross structures. The resonance switching of the transmission spectra was investigated by lowering the temperature below the critical transition temperature. This resonance switching effect is not observed in filters made up of metals. This novel fourcross rectangular resonator with a temperature-dependent resonance behavior holds great potential for active, tunable and low loss THz devices for imaging, sensing, and detection applications.Article Citation - WoS: 51Citation - Scopus: 48Cu2znsns4-Based Thin Films and Solar Cells by Rapid Thermal Annealing Processing(Elsevier Ltd., 2017) Olgar, Mehmet Ali; Klaer, J.; Mainz, R.; Özyüzer, Lütfi; Unold, T.In this study, kesterite Cu2ZnSnS4 (CZTS) absorber layers were fabricated by DC magnetron sputtering deposition of metallic Cu-Zn-Sn precursors, followed by an annealing treatment in sulfur vapor atmosphere at 600 °C for 3 min using rapid thermal processing (RTP). Three types of stacked metallic films were prepared and included pre-annealing of Cu-Sn stacks in order to induce preferential Cu-Sn alloying. The chemical composition of the sulfurized films was obtained by X-ray fluorescence (XRF) before and after etching the samples in KCN solution. All CZTS thin films are found to be Cu-poor and Zn-rich. Structural characterizations were performed by X-ray diffraction (XRD) and Raman spectroscopy to investigate the impact of pre-annealing on the structural properties of the precursors and final CZTS films. Glow discharge optical emission spectroscopy (GDOES) shows that pre-annealing of the precursors can improve depth homogeneity of the CZTS films. Photoluminescence spectra and the optical band gap energy values are compatible with literature. Selected samples were processed to solar cells and characterized.
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