Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 6Citation - Scopus: 5Structural and Optical Characteristics of Antimony Selenosulfide Thin Films Prepared by Two-Step Method(Springer, 2022) Türkoğlu, Fulya; Ekren, Memduh Emirhan; Cantaş, Ayten; Yakıncı, Kübra; Gündoğan, Hazal; Aygün, Gülnur; Özyüzer, LütfiAntimony triselenide (Sb2Se3) is one of the most promising absorber material choices among the inorganic semiconductors that has attracted much attention today. However, highest recorded efficiencies for Sb2Se3 solar cells are still lower than ideal. Exploring antimony selenosulfide (Sb-2(SxSe1-x)(3)) to increase device performance is one option because some features of alloyed Sb-2(SxSe1-x)(3) depend on composition such as bandgap and band position. In this study, two-step process was used to grow Sb-2(SxSe1-x)(3) thin films. In the first stage, Sb2Se3 thin films were deposited on soda lime glass substrates using direct current magnetron sputtering technique. In the second stage, Sb2Se3 thin films were exposed to sulfurization process in a quartz ampoule to obtain Sb-2(SxSe1-x)(3) thin films. Characterization results showed that morphological, optical, and structural properties of Sb-2(SxSe1-x)(3) thin films grown by presented method were highly dependent on amount of sulfur in the films. By the adjustment of the S/S + Se atomic ratio, Sb-2(SxSe1-x)(3) absorber materials with suitable bandgap, favorable orientation and compact morphology can be obtained for photovoltaic applications.Article Citation - WoS: 35Citation - Scopus: 38Influence of Sulfurization Temperature on Cu2znsns4 Absorber Layer on Flexible Titanium Substrates for Thin Film Solar Cells(IOP Publishing Ltd., 2018) Buldu, Dilara Gökçen; Cantaş, Ayten; Türkoğlu, Fulya; Akça, Fatime Gülşah; Meriç, Ece; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Aygün, GülnurIn this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.Article Citation - WoS: 21Citation - Scopus: 22Investigation of Electron Beam Lithography Effects on Metal-Insulator Transition Behavior of Vanadium Dioxide(IOP Publishing Ltd., 2017) Yüce, Hürriyet; Alaboz, Hakan; Demirhan, Yasemin; Özdemir, M.; Özyüzer, Lütfi; Aygün, GülnurVanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.Conference Object Citation - WoS: 1Selection of the Best Proper Dc-Squids in a Multi-Squid Configuration(IEEE, 2007) Avcı, İlbeyi; Akram, R.; Bozbey, Ali; Tepe, Mustafa; Abukay, DoğanWe have carried out experimental investigation of multi-DC-SQUID magnetometer configuration fabricated on YBa2Cu30 7-δ thin films onto 24 degree SrTiO3 bicrystal substrates by directly coupling the pick-up loop to DC-SQUIDs. The layout of the magnetometer pick-up loop was chosen as a square washer configuration by maximizing loop effective area and minimizing loop inductance. We have used De-Magnetron Sputtering technique for deposition of the films and chemical etching process for patterning the Josephson junctions having 4 μm widths. The use of multi-SQUID configuration is related to the selection of the best proper junctions for SQUID to improve the chip sensitivity with selectivity option of choosing the squid junctions rather than multichannel operation. Selection of the best junctions compared to each other depending on the junction critical currents and noise levels caused by the fabrication process and placements of the junctions on the grain boundary enable having an increased output signal of the DC-SQUID.Article Citation - WoS: 13Citation - Scopus: 12Mgb2 Superconducting Thin Films Sequentially Fabricated Using Dc Magnetron Sputtering and Thermionic Vacuum Arc Method(Elsevier Ltd., 2007) Okur, Salih; Kalkancı, M.; Pat, Suat; Ekem, Naci; Akan, Tamer; Balbağ, Zafer; Musa, G.; Tanoğlu, MetinIn this work, we discuss fabrication and characterization of MgB2 thin films obtained by sequential deposition and annealing of sandwich like Mg/B/Mg thin films on glass substrates. Mg and B films were prepared using DC magnetron sputtering and thermionic vacuum arc techniques, respectively. The MgB2 thin films showed superconducting critical transition at 33 K after annealing at 650 °C.