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Citation - WoS: 14
Citation - Scopus: 14
Quantum-Transport Characteristics of a P–n Junction on Single-Layer Tis3
(John Wiley and Sons Inc., 2016) İyikanat, Fadıl; Senger, Ramazan Tuğrul; Peeters, François M.; Şahin, Hasan
By using density functional theory and non-equilibrium Green′s function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p–n junction. We constructed a lateral p–n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p–n junction. In addition, the spin-dependent current–voltage characteristics of the constructed TiS3 p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p–n junction. These prominent conduction properties of the TiS3 p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.

Physics / Fizik