Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Conference Object Citation - WoS: 3Citation - Scopus: 31/F Noise in Amorphous Silicon and Silicon-Germanium Alloys(SPIE, 2003) Johanson, Robert E.; Güneş, Mehmet; Kasap, Safa O.We report measurements of conductance noise of a-Si1-XGeX:H in two different geometries; one where the current flow is transverse to the surface and the other longitudinal to it. Because of the large increase in sample resistance in going from transverse to longitudinal conduction, it was not possible to measure both geometries at the same temperature. However, the temperature trends are compatible with a common noise source. For both geometries, alloying with up to 40% Ge reduces the noise magnitude by a factor of 50 over that found in a-Si:HConference Object Citation - WoS: 3Citation - Scopus: 3Light Induced Degradation of Hydrogenated Amorphous Silicon - Germanium Alloy (a-Sige:h) Thin Films(National Institute of Optoelectronics, 2005) Dönertaş, M. Elif; Güneş, MehmetHydrogenated amorphous silicon germanium alloy thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) with varying Germanium concentrations have been investigated in both the annealed and the light soaked state. Samples were characterized using steady state photoconductivity and dual beam photoconductivity (DBP). The Staebler-Wronski effect has been investigated by monitoring the changes in the photoconductivity, σ ph, and the increase in the sub-bandgap absorption coefficient, α. The kinetics of defect creation for different germanium contents has also been compared with those for unalloyed hydrogenated amorphous silicon films. It is found that for the films with low Ge fraction, both a decrease in the photoconductivity and an increase in α (1.0eV) show similar time dependences to those observed in a-Si:H films. However, as the Ge content increases, σ ph degrades faster and the same time dependence is not seen in the increase of α(1.0eV).