Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Conference Object Citation - WoS: 3Citation - Scopus: 31/F Noise in Amorphous Silicon and Silicon-Germanium Alloys(SPIE, 2003) Johanson, Robert E.; Güneş, Mehmet; Kasap, Safa O.We report measurements of conductance noise of a-Si1-XGeX:H in two different geometries; one where the current flow is transverse to the surface and the other longitudinal to it. Because of the large increase in sample resistance in going from transverse to longitudinal conduction, it was not possible to measure both geometries at the same temperature. However, the temperature trends are compatible with a common noise source. For both geometries, alloying with up to 40% Ge reduces the noise magnitude by a factor of 50 over that found in a-Si:HConference Object Citation - WoS: 1Citation - Scopus: 2Conductance Fluctuations in A-Si:h: Effects of Alloying and Device Structure(Springer Verlag, 2003) Kasap, Safa O.; Güneş, Mehmet; Johanson, Robert E.; Wang, Q.; Yang, Jeffrey; Guha, SubhenduWe present measurements of conductance noise in undoped a-Si:H and a-SiGe: H thin films in both a transverse and coplanar electrode geometry. For a-Si:H with coplanar electrodes, the noise spectrum is not a pure f-α power law but consists of two linear regions with different slope parameters α. The spectral shape and its temperature dependence are similar for all samples, regardless of the growth technique. Adding Ge results in qualitatively similar spectra; however, α at high frequencies and the temperature dependence are altered. For both a-Si:H and a-SiGe:H with transverse electrodes, the noise spectra are pure f-α power laws, and α decreases with the Ge content.