Physics / Fizik

Permanent URI for this collectionhttps://hdl.handle.net/11147/6

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Subject: search.filters.subject.Epitaxial graphene

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  • Article
    Citation - WoS: 4
    Citation - Scopus: 5
    The Role of Charge Distribution on the Friction Coefficients of Epitaxial Graphene Grown on the Si-Terminated and C-Terminated Faces of Sic
    (Pergamon-Elsevier Science Ltd, 2021) Keskin, Yasemin; Ünverdi, Özhan; Erbahar, Doğan; Kaya, İsmet İnönü; Çelebi, Cem
    The friction coefficients of single-layer epitaxial graphene grown on the Si-terminated and C-terminated faces of Silicon Carbide (SiC) substrate were measured under ambient conditions using Friction Force Microscope (FFM). The lateral friction force measurements acquired in the applied normal force range between 4.0 and 16.0 nN showed that the friction coefficient of graphene on the C-terminated face of SiC is about two times smaller than the one grown on its Si-terminated face. The lateral friction was found to be decreased as the average of root mean square roughness increases suggesting the observed difference in the friction coefficients cannot be related to the roughness of the graphene layers. DFT calculations demonstrated that the altered periodicity of charge distribution on graphene due to the specific interactions with two distinct polar faces of SiC substrate might explain the observed difference in the friction coefficients. (C) 2021 Elsevier Ltd. All rights reserved.
  • Article
    Citation - WoS: 6
    Citation - Scopus: 7
    Epitaxial Graphene Thermistor for Cryogenic Temperatures
    (Elsevier, 2018) Kalkan, Sırrı Batuhan; Yiğen, Seren; Çelebi, Cem
    The thermal responsivity of monolayer epitaxial graphene grown on the Si-face surface of semi-insulating SiC substrate is investigated as a function of temperature below 300 K. The measurements showed that adsorption/desorption of atmospheric adsorbates can randomly modify the electrical characteristics of graphene which is indeed undesirable for consistent temperature sensing operations. Therefore, in order to avoid the interaction between graphene layer and adsorbates, the grown graphene layer is encapsulated with a thin SiO2 film deposited by Pulsed Electron Deposition technique. Temperature dependent resistance measurement of encapsulated graphene exhibited a clear thermistor type behavior with negative temperature coefficient resistance character. Both the sensitivity and transient thermal responsivity of the SiO2/graphene/SiC sample were found to be enhanced greatly especially for the temperatures lower than 225 K. The experimentally obtained results suggest that SiO2 encapsulated epitaxial graphene on SiC can be used readily as an energy efficient and stable temperature sensing element in cryogenic applications.