Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 2Citation - Scopus: 2Comparison of Photocatalytic Properties of Tio2 Thin Films and Fibers(EDP Sciences, 2016) Özdemir, Mehtap; Kurt, Metin; Özyüzer, Lütfi; Aygün, GülnurEfficiency of solar panels degrades as a result of organic contamination such as airborne particles, bird droppings and leaves. Any foreign object on photovoltaic panels reduces the sunlight entering the absorbing surface of the solar panels. Since this leads to a major problem decreasing in energy production, solar panels should be cleaned. The self-cleaning method can be preferred. There are some methods to clean the surface of solar panels. Among the self-cleaning materials, TiO2 is the most preferable ones because of its powerful photocatalytic properties. In this study, photocatalytic TiO2 were produced in two different nanostructures: nanofibers and thin films. TiO2 nanofibers were successfully produced by electrospinning. TiO2 thin films were fabricated by reactive magnetron sputtering technique. Both TiO2 nanofiber and thin film structures were heat-treated to form TiO2 in anatase phase at 600 °C for 2 h in air. Then, they were evaluated by SEM analyses for morphology, X-ray diffraction (XRD) analyses for phase structures, X-ray photoelectron spectroscopy (XPS) for the chemical state and atomic concentration, and UV-spectrometer for photocatalytic performance. The results indicate that photocatalytic and transmittance properties of TiO2 thin films are better than those of nanofibers. Consequently, TiO2 based thin films exhibit better performance for solar cell applications due to the surface cleanliness.Article Citation - WoS: 2Citation - Scopus: 2The Effect of Thickness of Silver Thin Film on Structural and Optical Properties of Porous Silicon(World Scientific Publishing Co. Pte Ltd, 2017) Çetinel, A.; Özdoğan, M.; Utlu, G.; Artunç, N.; Şahin, G.; Tarhan, EnverIn this study, porous silicon (PS) samples were prepared on n-type silicon (100) wafers by electrochemical etching method, varying the current density from 20 to 100mA/cm2 and keeping constant HF concentration (10%) and etching time of 15min. Then, Ag thin films, which have 10, 50 and 100nm film thicknesses, were deposited on PS layers by using thermal evaporation to investigate the influence of Ag film thickness on structural and optical properties of PS. The structural and optical properties of PS and Ag deposited PS layers have been investigated by XRD, FE-SEM, Raman and photoluminescence (PL) spectroscopy. FE-SEM XRD and Raman analyzes indicate that average pore size and porosity of PS layers increase with the increasing current density. Further, Ag nanoparticles have embedded in pore channel. PL measurement reveals that higher porosity of PS would be better to form the Ag-PS nano-composite material leading to stronger PL band. The PL spectra of PS and Ag-PS samples indicate that PL bands show blue shift with increasing current density and film thickness. Consequently, it has been found that the structural and optical properties of PS depend on current density and Ag film thickness individually.Article Citation - WoS: 3Citation - Scopus: 3Mgb2 Superconducting Thin Films Grown by Magnetron Sputtering(National Institute of Optoelectronics, 2007) Ulucan, Savaş; Özyüzer, Lütfi; Okur, SalihIn this study, we report the growth and properties of MgB2 thin films on polycrystalline Al2O3 substrates. A composite MgB2 target was produced by MgB2 and Mg powder mixing, using a hot pressing technique. MgB2 thin films were grown on Al 2O3 substrates by d.c. magnetron sputtering, without heating the substrate. To enhance the superconducting properties of the as-grown films and to increase the crystal quality, an ex-situ anneal process was applied. The crystal structure of the thin films was determined by X-ray diffraction. The resistivity versus temperature of the deposited MgB2 thin films was studied to examine the transition temperatures of the films under various magnetic fields. The effects of the annealing temperature and annealing time on the electrical properties of MgB2 thin films are revealed.Article Citation - WoS: 10Citation - Scopus: 12The Superconducting Transition Width and Illumination Wavelength Dependence of the Response of Mgo Substrate Ybco Transition Edge Bolometers(Elsevier Ltd., 2007) Öktem, B.; Bozbey, Ali; Avcı, İlbeyi; Tepe, Mustafa; Abukay, Doğan; Fardmanesh, M.Dependence of the phase and magnitude of the response of MgO substrate YBa2Cu3O7-δ (YBCO) transition edge bolometers to the near infrared radiation on the superconducting transition width is presented in this work. The bolometers were made of YBCO thin films of 200 nm thickness that were grown on single crystal MgO (1 0 0) substrates by DC inverted cylindrical magnetron sputtering. We have measured the responses of both large and small area devices with respect to the bias temperature and radiation modulation frequency. We have observed that the superconducting transition width has major effects on the response of the bolometers such as; on a dip of the phase of the response versus modulation frequency curve around 1 Hz, the rate of decrease of the magnitude of the response, and dependence of the phase of the response on temperature at mid-range modulation frequency. We have investigated a correlation between the superconducting transition width and the YBCO film surface morphology of the devices. In addition, the illumination wavelength dependence of the optical response of both wide and narrow transition width devices has been investigated. Here we present the analysis and the possible mechanisms that can affect the response of the bolometers at the superconducting transition region.Article Citation - WoS: 13Citation - Scopus: 12Mgb2 Superconducting Thin Films Sequentially Fabricated Using Dc Magnetron Sputtering and Thermionic Vacuum Arc Method(Elsevier Ltd., 2007) Okur, Salih; Kalkancı, M.; Pat, Suat; Ekem, Naci; Akan, Tamer; Balbağ, Zafer; Musa, G.; Tanoğlu, MetinIn this work, we discuss fabrication and characterization of MgB2 thin films obtained by sequential deposition and annealing of sandwich like Mg/B/Mg thin films on glass substrates. Mg and B films were prepared using DC magnetron sputtering and thermionic vacuum arc techniques, respectively. The MgB2 thin films showed superconducting critical transition at 33 K after annealing at 650 °C.Conference Object Citation - WoS: 7Citation - Scopus: 10Sub-Bandgap Absorption Spectroscopy and Minority Carrier Transport Properties of Hydrogenated Microcrystalline Silicon Thin Films(National Institute of Optoelectronics, 2005) Güneş, Mehmet; Göktaş, Oktay; Okur, Salih; Işık, Nebile; Carius, Reinhard; Klomfaß, Josef; Finger, FriedhelmHydrogenated microcrystalline silicon thin films have been prepared using HW-CVD and VHF-PECVD techniques with different silane concentrations. The steady-state photoconductivity, dual beam photoconductivity, photothermal deflection spectroscopy and steady-state photocarrier grating (SSPG) methods have been used to investigate the optical and electronic properties of the films. Two different sub-bandgap absorption methods have been applied and analyzed to obtain a better insight into the electronic states involved. For some films, differences existed in the optical absorption spectra when the measurements were carried out through the film side and through the substrate side. In addition, for some films, fringe patterns remained on the spectrum after the calculation of the fringe free absorption spectrum, which indicates that structural inhomogeneities were present throughout the film. Finally, minority carrier diffusion lengths deduced from the SSPG measurements were investigated as a function of the crystalline volume fraction (I c RS) obtained from Raman spectroscopy. The longest diffusion lengths and lowest sub-bandgap absorption coefficients were obtained for films deposited in the region of the transition to the amorphous growth.