Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Experimental and Theoretical Investigation of Synthesis and Properties of Dodecanethiol-Functionalized Mos<sub>2</Sub>
    (Royal Soc Chemistry, 2023) Duran, Tuna A.; Şahin, Hasan; Sabani, Denis; Milosevic, Milorad V.; Sahin, Hasan
    Herein, we investigate the DDT (1-dodecanethiol) functionalization of exfoliated MoS2 by using experimental and theoretical tools. For the functionalization of MoS2, DDT treatment was incorporated into the conventional NMP (N-methyl pyrrolidone) exfoliation procedure. Afterward, it has been demonstrated that the functionalization process is successful through optical, morphological and theoretical analysis. The D, G and 2LA peaks seen in the Raman spectrum of exfoliated NMP-MoS2 particles, indicate the formation of graphitic species on MoS2 sheets. In addition, as the DDT ratio increases, the vacant sites on MoS2 sheets diminish. Moreover, at an optimized ratio of DDT-NMP, the maximum number of graphitic quantum dots (GQDs) is observed on MoS2 nanosheets. Specifically, the STEM and AFM data confirm that GQDs reside on the MoS2 nano-sheets and also that the particle size of the DDT-MoS2 is mostly fixed, while the NMP-MoS2 show many smaller and distributed sizes. The comparison of PL intensities of the NMP-MoS2 and DDT-MoS2 samples states a 10-fold increment is visible, and a 60-fold increment in NIR region photoluminescent properties. Moreover, our results lay out understanding and perceptions on the surface and edge chemistry of exfoliated MoS2 and open up more opportunities for MoS2 and GQD particles with broader applications.
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    A Multi-Layered Graphene Based Gas Sensor Platform for Discrimination of Volatile Organic Compounds Via Differential Intercalation
    (Royal Society of Chemistry, 2023) Özkendir İnanç, Dilce; Ng, Zhi Kai; Başkurt, Mehmet; Keleş, Berfin; Vardar, Gökay; Şahin, Hasan; Tsang, Siu Hon; Palaniappan, Alagappan; Yıldız, Ümit Hakan; Teo, Eht
    Selective and sensitive detection of volatile organic compounds (VOCs) is of critical importance for environmental monitoring, disease diagnosis and industrial applications. Among VOCs, assay development for primary alcohols has captured significant research attention since their toxicity causes adverse effects on gastrointestinal and central nerve systems, resulting in irreversible blindness, and coma, and can be even fatal at high exposure levels. However, selective detection of primary alcohols is extremely challenging owing to the similarity in their molecular structure and characteristic groups. Herein, we have attempted to investigate the differential methanol (MeOH)-ethanol (EtOH) discriminative properties of single-layer, bi-layer, and multi-layer graphene morphologies. Chemiresistors fabricated using the three morphologies of graphene illustrate discriminative MeOH-EtOH responses, which is attributed to the phenomenon of differential intercalation of MeOH within layered graphene morphologies as compared to that of EtOH. This hypothesis is verified by density functional theory calculations, which revealed that the adsorption of EtOH molecules on the graphene surface is more energetically favorable as compared to that of MeOH molecules, thereby inhibiting their intercalation within the layered graphene morphologies. It is further evaluated that the degree of MeOH intercalation increases with increasing layers of graphene for obtaining differential MeOH-EtOH responses. Experimental results suggest possibilities to develop selective and sensitive MeOH assays fabricated using various graphene morphologies in a combinatorial sensor array format.
  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Ultra-Thin Structures of Manganese Fluorides: Conversion From Manganese Dichalcogenides by Fluorination
    (Royal Society of Chemistry, 2021) Başkurt, Mehmet; Nair, Rahul R.; Peeters, François M.; Şahin, Hasan
    In this study, it is predicted by density functional theory calculations that graphene-like novel ultra-thin phases of manganese fluoride crystals, that have nonlayered structures in their bulk form, can be stabilized by fluorination of manganese dichalcogenide crystals. First, it is shown that substitution of fluorine atoms with chalcogens in the manganese dichalcogenide host lattice is favorable. Among possible crystal formations, three stable ultra-thin structures of manganese fluoride, 1H-MnF2, 1T-MnF2 and MnF3, are found to be stable by total energy optimization calculations. In addition, phonon calculations and Raman activity analysis reveal that predicted novel single-layers are dynamically stable crystal structures displaying distinctive characteristic peaks in their vibrational spectrum enabling experimental determination of the corresponding phases. Differing from 1H-MnF2 antiferromagnetic (AFM) large gap semiconductor, 1T-MnF2 and MnF3 single-layers are semiconductors with ferromagnetic (FM) ground state.
  • Article
    Citation - WoS: 17
    Citation - Scopus: 18
    Origin of Anomalous Band-Gap Bowing in Two-Dimensional Tin-Lead Mixed Perovskite Alloys
    (American Physical Society, 2021) Gao, Qiang; Şahin, Hasan; Kang, Jun; Wei, Su-Huai
    The origin of the pronounced and composition-dependent band-gap bowing in Sn/Pb mixed perovskite alloys has been under debate for a long time. Previous studies reported conflicting results on whether the chemical or structural effect is the dominant mechanism. In this paper, the band-gap bowing effect and its possible origins in recently synthesized two-dimensional (2D) Cs2PbxSn1-xI2Cl2 alloys are investigated from first-principles calculations. In agreement with experiments, a large and composition-dependent bowing coefficient is observed. By analyzing the contribution from volume deformation, charge exchange, structural relaxation, and short-range order, it is found that the dominant mechanism causing the anomalous gap bowing is the structural relaxation-induced wave-function localization, forming isovalent-defect-like states, despite the negligible octahedral distortion and small lattice mismatch between the two end compounds. This is understood by the s-p repulsion-induced strong antibonding character of the valence-band maximum which leads to a large deformation potential, thus even a small atomic displacement can result in a large shift of the energy level. These results thus highlight the critical role of strong deformation potential and structural relaxation effect in unusual band evolution of 2D Sn/Pb perovskite alloys, and can be helpful to the modulation of their band gap for optoelectronic applications.
  • Article
    Citation - WoS: 8
    Citation - Scopus: 8
    Electronic Properties of Intrinsic Vacancies in Single-Layer Caf2 and Its Heterostructure With Monolayer Mos2
    (AIP Publishing LLC, 2021) Li, Zhenzhen; Başkurt, Mehmet; Şahin, Hasan; Gao, Shiwu; Kang, Jun
    Exploring gate insulator materials for 2D transistors and their defect properties is of importance for device performance optimization. In this work, the structural and electronic properties of intrinsic vacancies in the CaF2 single layer and its heterostructures with monolayer MoS2 are investigated from first-principles calculations. V-Ca introduces a shallow defect level close to the VBM, whereas VF introduces a deep level below the CBM. In both cases, spin polarization is observed. Overall, VF has a relatively lower formation energy than VCa, except for the extreme Ca-rich case. Thus, VF should be dominant in CaF2. The band offset between CaF2 and MoS2 is determined to be type-I, with large offsets at both the conduction band and valence band. With the presence of vacancies in CaF2, the type-I band offset is preserved. The electron or hole on the defect states will transfer from CaF2 to MoS2 due to the large band offset, and spin polarization vanishes. Nevertheless, there are no defect states inside the gap or around the band edge of MoS2, and the electronic properties of MoS2 are almost intact. Compared with h-BN that has a small valence band offset with MoS2 and could introduce in-gap defect states, CaF2 can be a good candidate to serve as the dielectric layer of MoS2-based transistors. Published under an exclusive license by AIP Publishing.
  • Article
    Citation - WoS: 8
    Citation - Scopus: 9
    Cesium Manganese Chloride: Stable Lead-Free Perovskite From Bulk To Single Layer
    (Elsevier, 2021) Sözen, Yiğit; Özen, Sercan; Şahin, Hasan
    Motivated by the recent advances in perovskite-based solar cells, here we investigate stability, electronic properties and vibrational characteristics of lead-free perovskite, CsMnCl3, and its low dimensional forms by means of first-principles calculations. Structural optimizations reveal that, regardless of whether it is bulk or ultra-thin single layer cubic perovskite structure, CsMnCl3 crystal exhibit robust antiferromagnetism in its ground state due to oppositely aligned magnetic moments of Mn atoms. In addition to total energy calculations, phonon band dispersions indicate that CsMnCl3 structure sustains its dynamical stability down to its thinnest single layer crystal structures. The calculated Raman spectrums state that while the first-order Raman scattering is forbidden for bulk CsMnCl3 due to the cubic symmetry; dimensional-reduction-driven symmetry breaking leads to emergence of experimentally-observable distinctive Raman active modes in bilayer and single-layer crystal structures. Moreover, the electronic band dispersions reveal that from its bulk to ultra-thin single layer structures CsMnCl3 crystals are robust antiferromagnetic insulators. Multiple valid features like controllable dimensionality, robust antiferromagnetism and wide electronic band gap make cubic CsMnCl3 crystal as a potential candidate for nano-scale optoelectronic applications.
  • Article
    Citation - WoS: 5
    Citation - Scopus: 5
    Raman and Optical Characteristics of Van Der Waals Heterostructures of Single Layers of Gap and Gase: a First-Principles Study
    (Royal Society of Chemistry, 2021) Sözen, Yiğit; Şahin, Hasan
    One of the effective methods to modulate or improve the fundamental properties of 2D van der Waals materials is building their heterostructures. In this study, we employ first-principles calculations based on density functional theory to predict the ground state properties of vertically aligned single layer crystals of GaP and GaSe. First, it is shown that, depending on the intimate contact atoms in GaP, the crystal formation of heterostructures displaying characteristics of type-I and type-II heterojunctions is possible. Here, the quasiparticle bandgaps for the spatially direct and indirect electronic transitions are calculated to be 2.70 and 1.78 eV, respectively. Vibrational analysis not only reveals the dynamic stability of the heterostructures but also allows the calculation of the Raman activity spectrum of each structure, providing a fingerprint of the stacking type. In addition, by solving the BSE equation on top of G(0)W(0) approximation, the optical gaps, reflectance and transmittance spectra of the heterostructures are determined. The calculated absorption spectra demonstrate that the spectral position and characteristics of the optical transitions are altered depending on the heterojunction type. Furthermore, it is found that the interband and intraband transitions in the GaP/GaSe heterostructures can also be monitored via their reflectance and transmittance spectra.
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    First-Principles Investigation of Structural, Raman and Electronic Characteristics of Single Layer Ge3n4
    (Elsevier, 2022) Yayak, Yankı Öncü; Sözen, Yiğit; Tan, Fırat; Güngen, Deniz; Gao, Q.; Kang, J.; Yağmurcukardeş, Mehmet; Şahin, Hasan
    By means of density functional theory-based first-principle calculations, the structural, vibrational and electronic properties of single-layer Ge3N4 are investigated. Structural optimizations and phonon band dispersions reveal that single-layer ultrathin form of Ge3N4 possesses a dynamically stable buckled structure with large hexagonal holes. Predicted Raman spectrum of single-layer Ge3N4 indicates that the buckled holey structure of the material exhibits distinctive vibrational features. Electronic band dispersion calculations indicate the indirect band gap semiconducting nature of single-layer Ge3N4. It is also proposed that single-layer Ge3N4 forms type-II vertical heterostructures with various planar and puckered 2D materials except for single-layer GeSe which gives rise to a type-I band alignment. Moreover, the electronic properties of single-layer Ge3N4 are investigated under applied external in-plane strain. It is shown that while the indirect gap behavior of Ge3N4 is unchanged by the applied strain, the energy band gap increases (decreases) with tensile (compressive) strain. © 2021 Elsevier B.V.
  • Article
    Citation - WoS: 5
    Citation - Scopus: 6
    Boosting Up Printability of Biomacromolecule Based Bio-Ink by Modulation of Hydrogen Bonding Pairs
    (Elsevier Ltd., 2020) Köksal, Büşra; Önbaş, Rabia; Başkurt, Mehmet; Şahin, Hasan; Arslan Yıldız, Ahu; Yıldız, Ümit Hakan
    This study describes low dose UV curable and bioprintable new bioink made of hydrogen bond donor-acceptor adaptor molecule 2-isocyanatoethyl methacrylate (NCO)modified gelatin (NCO-Gel). Our theoretical calculations demonstrate that insertion of 2-isocyanatoethyl methacrylate doubles the interaction energy (500 meV) between gelatin chains providing significant contribution in interchain condensation and self-organization as compared to methacrylic anhydride modified gelatin (GelMA). The NCO-Gel exhibits peak around 1720 cm?1 referring to bidentate hydrogen bonding between H-NCO and its counterpart O[dbnd]CN[sbnd]H. These strong interchain interactions drive chains to be packed and thereby facilitating UV crosslinking. The NCO-Gel is exhibiting a rapid, 10 s gelation process by the exposure of laser (3 W, 365 nm). The dynamic light scattering characterization also reveals that NCO-Gel has faster sol to gel transition as compared to GelMA depending on the UV curing time. The NCO-Gel was found to be more firm and mechanically strong that provides advantages in molding as well as bioprinting processes. Bioprinted NCO-Gel has shown sharp borders and stable 3D geometry as compared to GelMA ink under 10 s UV curing time. The cell viability tests confirm that NCO-Gel facilitates cell proliferation and supports cell viability. We foresee that NCO-Gel bioink formulation provides a promising opportunity when low dose UV curing and rapid printing are required. © 2020 Elsevier Ltd
  • Article
    Citation - WoS: 7
    Citation - Scopus: 8
    Stable janus TaSe2 single-layers via surface functionalization
    (Elsevier Ltd., 2021) Kahraman, Zeynep; Başkurt, Mehmet; Yağmurcukardeş, Nesli; Chaves, A.; Şahin, Hasan
    First-principles calculations are performed in order to investigate the formation of Janus structures of single-layer TaSe2. The structural optimizations and phonon band dispersions reveal that the formation and stability of hydrogenated (HTaSe2), fluorinated (FTaSe2), and the one-side hydrogenated and one-side fluorinated (Janus-HTaSe2F) single-layers are feasible in terms of their phonon band dispersions. It is shown that bare metallic single-layer TaSe2 can be turned into a semiconductor as only one of its surface is functionalized while it remains as a metal via its two surfaces functionalization. In addition, the semiconducting nature of single-layers HTaSe2 and FTaSe2 and the metallic behavior of Janus TaSe2 are found to be robust under applied uniaxal strains. Further analysis on piezoelectric properties of the predicted single-layers reveal the enhanced in-plane and out-of-plane piezoelectricity via formed Janus-HTaSe2F. Our study indicates that single-layer TaSe2 is a suitable host material for surface functionalization via fluorination and hydrogenation which exhibit distinctive electronic and vibrational properties. © 2020 Elsevier B.V.