Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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  • Article
    Citation - WoS: 8
    Citation - Scopus: 8
    Study of Boron Doped Amorphous Silicon Lightly Hydrogenated Prepared by Dc Magnetron Sputtering for Infrared Detectors Applications
    (Elsevier Ltd., 2020) Ketroussi, K.; Cherfi, R.; Yahia, Seba, H.; Tata, S.; Chabane, L.; Özyüzer, Lütfi; Rahal, A.
    The objective of this study is to investigate the effect of boron doping concentration on the bolometric properties of lightly hydrogenated amorphous silicon doped with boron (a-Si: H(B)) films. Thin film a-Si: H(B) samples with different boron concentrations are prepared by co-sputtering of boron and silicon at relatively low hydrogen pressure. FTIR analyses show that the intensity of the characteristic peak of the substitutional boron gradually increases with the addition of boron. Increasing in boron concentration affects the bolometric properties of the lightly hydrogenated a-Si: H (B) films, including conductivity at room temperature (?RT) and thermal resistance coefficient (TCR). Indeed, when the boron concentration increases from 1.5 to 43%, ?RT increases from 1.4 10?6 to 2 10?3 ??1 cm?1 while the absolute value of TCR decreases from 3% to 8% K?1, respectively. In addition, lightly hydrogenated a-Si: H (B) films exhibit good thermal stability. We have showed in this study that lightly hydrogenated a-Si: H(B) can be considered as a potential candidate for low-cost, high-performance uncooled micro bolometers. © 2020 Elsevier B.V.
  • Article
    Citation - WoS: 11
    Citation - Scopus: 12
    Electrical Properties of Gadolinia Doped Ceria Electrolytes Fabricated by Infiltration Aided Sintering
    (Elsevier Ltd., 2019) Sındıraç, Can; Büyükaksoy, Aligül; Akkurt, Sedat
    Common solid oxide fuel cell (SOFC) electrolyte materials (e.g., gadolinia doped ceria - GDC) demand temperatures exceeding 1400 degrees C for densification by conventional solid state sintering. It is very desirable to reduce the densification of the SOFC electroltytes to i) avoid microstructural coarsening of the composite anode layers, which are co-sintered with the electolyte layer in the anode supported SOFC fabrication scheme and ii) reduce energy consumption during SOFC manufacturing. We have recently demostrated a novel infiltration-aided sintering route to densify GDC ceramics at 1200 degrees C. In the present work, we present the electrical properties of GDC ceramics fabricated thusly. Comparison of high density (>= 95%) samples fabricated by conventional or infiltration-aided sintering reveal that at 700 degrees C, similar total electrical conductivities are obtained, while at 300 degrees C, specific grain boundary resistivity is smaller in the latter. Bulk (grain) conductivity is higher in porous GDC ceramics (relative density <= 90%) fabricated by infiltration-aided sintering than the conventionally sintered ones with similar porosities. Finally, open circuit voltage of 0.84 V at 700 degrees C, obtained under dilute hydrogen and stagnant air conditions suggests that GDC ceramics densified by infiltration-aided sintering are suitable for use as SOFC electrolytes.