Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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  • Article
    Citation - WoS: 149
    Citation - Scopus: 149
    Hexagonal Aln: Dimensional-Crossover Band-Gap Transition
    (American Physical Society, 2015) Bacaksız, Cihan; Şahin, Hasan; Senger, Ramazan Tuğrul; Horzum, Şeyda; Horzum, Şeyda; Şahin, Hasan; 04.04. Department of Photonics; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas, Appl. Phys. Lett. 103, 251605 (2013)APPLAB0003-695110.1063/1.4851239], we investigate structural, electronic, and vibrational properties of bulk, bilayer, and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-band-gap semiconductor. The calculated phonon spectrum displays a rigid-layer shear mode at 274 cm-1 and an Eg mode at 703 cm-1, which are observable by Raman measurements. In addition, single-layer h-AlN is an indirect-band-gap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA′-type stacking is found to be the most favorable one, and interlayer interaction is strong. While N-layered h-AlN is an indirect-band-gap semiconductor for N=1-9, we predict that thicker structures (N≥10) have a direct band gap at the Γ point. The number-of-layer-dependent band-gap transitions in h-AlN is interesting in that it is significantly different from the indirect-to-direct crossover obtained in the transition-metal dichalcogenides.
  • Article
    Citation - WoS: 14
    Citation - Scopus: 14
    Formation and Diffusion Characteristics of Pt Clusters on Graphene, 1h-Mos2 and 1t-Tas2
    (John Wiley and Sons Inc., 2014) Özaydın, H. Duygu; Şahin, Hasan; Şahin, Hasan; Peeters, François M.; 04.04. Department of Photonics; 04. Faculty of Science; 01. Izmir Institute of Technology
    Many experiments have revealed that the surfaces of graphene and graphene-like structures can play an active role as a host surface for clusterization of transition metal atoms. Motivated by these observations, we investigate theoretically the adsorption, diffusion and magnetic properties of Pt clusters on three different two-dimensional atomic crystals using first principles density functional theory. We found that monolayers of graphene, molybdenum disulfide (1H-MoS2) and tantalum disulfide (1T-TaS2) provide different nucleation characteristics for Pt cluster formation. At low temperatures, while the bridge site is the most favorable site where the growth of a Pt cluster starts on graphene, top-Mo and top-Ta sites are preferred on 1H-MoS2 and 1T-TaS2, respectively. Ground state structures and magnetic properties of Ptn clusters (n = 2,3,4) on three different monolayer crystal structures are obtained. We found that the formation of Pt2 dimer and a triangle-shaped Pt3 cluster perpendicular to the surface are favored over the three different surfaces. While bent rhombus shaped Pt4 is formed on graphene, the formation of tetrahedral shaped clusters are more favorable on 1H-MoS2 and 1T-TaS2. Our study of the formation of Ptn clusters on three different monolayers provides a gateway for further exploration of nanocluster formations on various surfaces.